TRANSISTOR BO 540 Search Results

TRANSISTOR BO 540 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR BO 540 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Voltage Regulators AN1149FHK 6-ch DC-DC Converter • Overview Unit: mm 9.0±0.2 7.0±0.1 25 37 ■ Applications • Digital still cameras 0.5 12 0.20±0.05 1.0 1 0.10 M (1.0) 1.20 max. 0.15±0.05 (0.75) 0.10+0.10 –0.05 • Low voltage operation (1.5 V min.)	Original	PDF	AN1149FHK
Untitled Abstract: No abstract text available Text: Voltage Regulators AN1149NFHK 6-ch DC-DC Converter • Overview Unit: mm 9.0±0.2 7.0±0.1 25 37 ■ Applications • Digital still cameras 0.5 12 0.20±0.05 1.0 1 0.10 M (1.0) 1.20 max. 0.15±0.05 (0.75) 0.10+0.10 –0.05 • Low voltage operation (1.5 V min.)	Original	PDF	AN1149NFHK
BFP-540 Abstract: VPS05605 transistor BO 540 Transistor MJE 540 Text: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3 For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB Gold metallization for high reliability 2 SIEGET 45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	VPS05605 OT-343 50Ohm -j100 Jun-09-2000 BFP-540 VPS05605 transistor BO 540 Transistor MJE 540
VPS05605 Abstract: No abstract text available Text: SIEGET 45 BFP 540 NPN Silicon RF Transistor Preliminary data 3 For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB Gold metallization for high reliability 2 SIEGET 45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	PDF	VPS05605 OT-343 50Ohm -j100 Oct-27-1999 VPS05605
CC5401 Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 9AW TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.	Original	PDF	CC5401 C-120 CC5401
Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 9AW TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.	Original	PDF	CC5401 C-120
NCP1392BD Abstract: IC 1392B 1392B ballast Self-Oscillating NCP1392 smps high power smps resonant llc NCP1392BDR2G SELF OSCILLATING HALF BRIDGE DRIVER IC DATA SHEET LLC resonant converters Text: NCP1392B High-Voltage Half-Bridge Driver with Inbuilt Oscillator The NCP1392B is a self−oscillating high voltage MOSFET driver primarily tailored for the applications using half bridge topology. Due to its proprietary high−voltage technology, the driver accepts bulk	Original	PDF	NCP1392B NCP1392B NCP1392/D NCP1392BD IC 1392B 1392B ballast Self-Oscillating NCP1392 smps high power smps resonant llc NCP1392BDR2G SELF OSCILLATING HALF BRIDGE DRIVER IC DATA SHEET LLC resonant converters
MARKING W1 AD Abstract: CC5401 Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 9AW TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.	Original	PDF	CC5401 C-120 MARKING W1 AD CC5401
639 TRANSISTOR PNP Abstract: transistor ESM 692 NPN 337 esm 2907 pnp transistor npn 2222 transistor transistor C 548 B BC516 E C B BC 635 TRANSISTOR BC 557 PNP TRANSISTOR transistor bf 422 NPN Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PNP NPN CB-1% PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .	OCR Scan	PDF	BCW94 CB-76 639 TRANSISTOR PNP transistor ESM 692 NPN 337 esm 2907 pnp transistor npn 2222 transistor transistor C 548 B BC516 E C B BC 635 TRANSISTOR BC 557 PNP TRANSISTOR transistor bf 422 NPN
BF298 Abstract: BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457 Text: th o m so n -csf general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PN P N PN PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .	OCR Scan	PDF	BCW94 BF298 BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457
TRANSISTOR BC 213 Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .	OCR Scan	PDF	BCW94 CB-76 TRANSISTOR BC 213 TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
transistor Bc 540 Abstract: TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635 Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -c s f Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .	OCR Scan	PDF	BCW94 CB-76 transistor Bc 540 TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635
transistor bf 422 NPN Abstract: transistors BC 548 BC 558 transistor BC 338 BC 2222 BC 557 npn transistor bf 422 BC 547 pnp transistor 2N 5551 TRANSISTOR 642 npn 2222 transistor Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .	OCR Scan	PDF	BCW94 transistor bf 422 NPN transistors BC 548 BC 558 transistor BC 338 BC 2222 BC 557 npn transistor bf 422 BC 547 pnp transistor 2N 5551 TRANSISTOR 642 npn 2222 transistor
QM10TE-HB Abstract: bup transistor bvp DIODE QM10 QM10T Text: MITSUBISHI TRANSISTOR MODULES QM10TE-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM10TE-HB • Ic • V ce x • hFE Collector current. 10A [ Collector-emitter voltage. 600V j DC current gain.250	OCR Scan	PDF	QM10TE-HB E80276 E80271 QM10TE-HB bup transistor bvp DIODE QM10 QM10T

Untitled Abstract: No abstract text available Text: 2SK2917 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 7<;ii5Q17 M F • m. v ■ m HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE	OCR Scan	PDF	2SK2917 ii5Q17
TRANSISTOR k2185 Abstract: No abstract text available Text: Model 540 Voltsensor CALEX MANUFACTURING CO SEE 2401 Stanwell Drive, Concord, CA 94520-4841 D 1011250 000105b 510 687-4411 (800)542-3355 37b « C E X FAX: (510) 687-3333 FEATURES • Rugged reliable solid state replacement for meter relays. • Uses almost any power source from +5 to +32V D C	OCR Scan	PDF	000105b 26VDC, 10msec 00ELS or28V TRANSISTOR k2185
1307 TRANSISTOR Abstract: H15B1 4N38-4N38A "Photo Interrupter" dual transistor 4N38 4N38A IC VS 1307 H11AA1 H11AA2 H11B2 Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% AC INPUT COUPLER H11AA1 H11AA2 1289 128? I I 20% 10% 1500 1500 ID nA MAX. BVceo (VOLTS) MIN. 50 30 100 200 30 30 100 100 100	OCR Scan	PDF	H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 1307 TRANSISTOR H15B1 4N38-4N38A "Photo Interrupter" dual transistor 4N38 IC VS 1307
2SB645 Abstract: 2sd657 SiS 671 SIS 672 2SB646 2SB654 SIS 661 2SB656 2SB647 2SB648 Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	PDF	Tc-25 100kHz 2SB645 2sd657 SiS 671 SIS 672 2SB646 2SB654 SIS 661 2SB656 2SB647 2SB648
transistor ac 132 Abstract: MONOLITHIC DIODE ARRAYS fairchild A3018 MONOLITHIC DIODE ARRAYS A3054 MA3036 MA3046 UA3026HM 6 "transistor arrays" ic fla3019 Text: MA3018 • JA3018A •pA3019 •mA3026 •pA3036 MA3039 •\|jA3045 •pA3046 •\i A3054 •mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D ESC RIPTIO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed	OCR Scan	PDF	jA3018 HA3018A. A3019. pA3026 MA3036 A3039 jA3045 iiA3046 A3054 jA3086 transistor ac 132 MONOLITHIC DIODE ARRAYS fairchild A3018 MONOLITHIC DIODE ARRAYS A3054 MA3046 UA3026HM 6 "transistor arrays" ic fla3019
A3018 Abstract: MONOLITHIC DIODE ARRAYS A3054 MA3036 MA3046 UA3026HM 6 "transistor arrays" ic darlington pair power transistor transistor 1354 SS126 Text: MA3018 • JA3018A •pA3019 •mA3026 •pA3036 MA3039 •\|jA3045 •pA3046 •\i A3054 •mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D E SC R IP TIO N — Fairchild Transistor and Diode Arrays consist of general purpose integrated circuit devices constructed	OCR Scan	PDF	jA3018 HA3018A. A3019. pA3026 MA3036 A3039 jA3045 iiA3046 A3054 jA3086 A3018 MONOLITHIC DIODE ARRAYS A3054 MA3046 UA3026HM 6 "transistor arrays" ic darlington pair power transistor transistor 1354 SS126
DARLINGTON TRANSISTOR ARRAY Abstract: No abstract text available Text: MA3018•MA3018A•MA3019•MA3026•MA3036 MA3039•HA3045•nA3046•mA3054•mA3086 TRANSISTOR AND DIODE ARRAYS FAIRCHILD LINEAR INTEGRATED CIRCUITS G E N E R A L D ES C R IP T IO N — Fairch ild Transistor and Diode A rrays consist o f general purpose integrated circu it devices constructed	OCR Scan	PDF	MA3018â MA3018Aâ MA3019â MA3026â MA3036 MA3039â HA3045â nA3046â mA3054â mA3086 DARLINGTON TRANSISTOR ARRAY
IC 74151 diagram and truth table Abstract: 7474 ic 2x4 demultiplexer using ic 74155 EQUIVALENT 9974 GP 7447 BCD to 7-segment APPLICATION NOTES CD 7474 IC IC 7404 7406 truth table bcd vm 170 1p0 8-input 7430 NAND gate with truth table 7448 bcd to seven segment decoder Text: TTL DATA BO O K Fairchild Semiconductor TTL Data Book Contents And Section Selector If you know the correct 5400, 7400, 9300 or 9600 device type number, find the correct page in the Numerical Index. If you are trying to choose the best device for your application, consult the	OCR Scan	PDF	54S/74S) 12-Input IC 74151 diagram and truth table 7474 ic 2x4 demultiplexer using ic 74155 EQUIVALENT 9974 GP 7447 BCD to 7-segment APPLICATION NOTES CD 7474 IC IC 7404 7406 truth table bcd vm 170 1p0 8-input 7430 NAND gate with truth table 7448 bcd to seven segment decoder
2SA863 Abstract: 2sc1846 138D 2SC1652 2SC1775 2SC1787 2SC1847 2SC1848 Text: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	PDF	2SC1847 2SC1848 2SCJ849 2SC1850 2SC1851 2SC1852 2SA863 2sc1846 138D 2SC1652 2SC1775 2SC1787 2SC1847 2SC1848
Untitled Abstract: No abstract text available Text: FSF450D, FSF450R 9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs e 1998 Features Description • 9A, 500V, Tqs ^o N = 0.600£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	PDF	FSF450D, FSF450R 36MeV/mg/cm2 MIL-S-19500

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TRANSISTOR BO 540 Search Results

TRANSISTOR BO 540 Result Highlights (5)

TRANSISTOR BO 540 Datasheets Context Search

Untitled

Untitled

BFP-540

VPS05605

CC5401

Untitled

NCP1392BD

MARKING W1 AD

639 TRANSISTOR PNP

BF298

TRANSISTOR BC 213

transistor Bc 540

transistor bf 422 NPN

QM10TE-HB

Untitled

TRANSISTOR k2185

1307 TRANSISTOR

2SB645

transistor ac 132

A3018

DARLINGTON TRANSISTOR ARRAY

IC 74151 diagram and truth table

2SA863

Untitled