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    BC516 Price and Stock

    onsemi BC516-D27Z

    TRANS PNP DARL 30V 1A TO92-3
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    DigiKey BC516-D27Z Reel 4,000 2,000
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    BC516-D27Z Cut Tape 3,031 1
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    Mouser Electronics BC516-D27Z 3,886
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    Verical BC516-D27Z 10,580 99
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    BC516-D27Z 8,000 2,000
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    Arrow Electronics BC516-D27Z Cut Strips 10,580 10 Weeks 1
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    Newark BC516-D27Z Cut Tape 3,650 1
    • 1 $0.068
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    BC516-D27Z Cut Tape 12 1
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    BC516-D27Z Reel 2,000
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    Onlinecomponents.com BC516-D27Z 8,000
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    TME BC516-D27Z 1
    • 1 $0.352
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    Chip1Stop BC516-D27Z Cut Tape 900
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    EBV Elektronik BC516-D27Z 10,000 11 Weeks 2,000
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    Master Electronics BC516-D27Z 8,000
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    onsemi BC516

    TRANS PNP DARL 30V 1A TO92-3
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    DigiKey BC516 Bulk
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    Festo QBC-5-16H-U

    BLANKING PLUG
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    DigiKey QBC-5-16H-U Bulk 10
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    JRH Electronics 805-061-16M8-6BC516

    Triple-Start Mighty Mouse Circul
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    DigiKey 805-061-16M8-6BC516 1
    • 1 $1544.54
    • 10 $1544.54
    • 100 $1359.1924
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    JRH Electronics 805-061-16M8-7BC516

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    DigiKey 805-061-16M8-7BC516 1
    • 1 $1544.54
    • 10 $1544.54
    • 100 $1359.1924
    • 1000 $1359.1924
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    BC516 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BC516 Fairchild Semiconductor PNP Darlington Transistor Original PDF
    BC516 Infineon Technologies TRANS DARLINGTON PNP 30V 0.5A 3TO-92 Original PDF
    BC516 Korea Electronics TRANS DARLINGTON PNP 30V 0.5A 3TO-92 Original PDF
    BC516 NXP Semiconductors PNP Darlington transistor - fT min: 220 typ. MHz; hFE max:>30000 ; hFE min: 30000 ; IC max: 500 mA; Polarity: PNP ; Ptot max: 500 mW; VCEO max: 30 V Original PDF
    BC516 Philips Semiconductors PNP Darlington transistor Original PDF
    BC516 Philips Semiconductors Small-signal Transistors Original PDF
    BC516 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BC516 Siemens Cross Reference Guide 1998 Original PDF
    BC516 Siemens PNP Silicon Darlington Transistor Original PDF
    BC516 Micro Electronics SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS Scan PDF
    BC516 Micro Electronics Semiconductor Device Data Book Scan PDF
    BC516 Micro Electronics Semiconductor Devices Scan PDF
    BC516 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BC516 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    BC516 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BC516 Unknown Cross Reference Datasheet Scan PDF
    BC516 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BC516 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BC516 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BC516 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    BC516 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC516

    Abstract: bc517 SC-43A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor Product specification Supersedes data of 1999 Apr 23 2004 Nov 05 Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES PINNING • High current max. 500 mA


    Original
    PDF M3D186 BC516 BC517. MAM303 SCA76 R75/04/pp6 BC516 bc517 SC-43A

    BC516

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC516 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. C A B N MAXIMUM RATING Ta=25 E K G SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V -10 V Collector Current


    Original
    PDF BC516 -100mA, 100MHz BC516

    bc516

    Abstract: bc517 BC517 data sheet
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor Product specification Supersedes data of 1997 Apr 16 1999 Apr 23 Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES PINNING • High current max. 500 mA


    Original
    PDF M3D186 BC516 BC517. MAM303 SCA63 115002/00/03/pp8 bc516 bc517 BC517 data sheet

    BC516

    Abstract: BC516 equivalent transistor BC516 bc517 SC-43A bC516 transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 BC516 PNP Darlington transistor Product data sheet Supersedes data of 1999 Apr 23 2004 Nov 05 NXP Semiconductors Product data sheet PNP Darlington transistor BC516 FEATURES PINNING • High current max. 500 mA


    Original
    PDF M3D186 BC516 BC517. MAM303 R75/04/pp6 BC516 BC516 equivalent transistor BC516 bc517 SC-43A bC516 transistor

    BC516 equivalent

    Abstract: str 6707 datasheet str 6707 str 6707 datasheet bc517 StR 40000 BC517 data sheet darlington pnp DATASHEET OF IC 733 PO 903
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 16 Philips Semiconductors Product specification PNP Darlington transistor


    Original
    PDF M3D186 BC516 BC517. MAM303 SCA54 117047/00/02/pp8 BC516 equivalent str 6707 datasheet str 6707 str 6707 datasheet bc517 StR 40000 BC517 data sheet darlington pnp DATASHEET OF IC 733 PO 903

    BC516

    Abstract: No abstract text available
    Text: BC516 BC516 PNP Darlington Transistor • This device is designed for applications reguiring extremely high current gain at currents to 1mA. • Sourced from process 61. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TA=25°C unless otherwise noted


    Original
    PDF BC516 BC516

    BC516 equivalent

    Abstract: transistor BC516 BC516
    Text: BC516 PNP Silicon Darlington Transistor Collector Base Emitter 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage


    Original
    PDF BC516 BC516 equivalent transistor BC516 BC516

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC516 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. MAXIMUM RATING Ta=25 2002. 11. 13 Revision No : 0 1/1


    Original
    PDF BC516

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC516 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. C A B N E K MAXIMUM RATING Ta=25℃ G SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V -10 V Collector Current


    Original
    PDF BC516 -10mA, -100mA, 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 BC516 TRANSISTOR PNP 1.COLLECTOR FEATURES z High DC Current Gain z High Collector Current 2.BASE 3.EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original
    PDF BC516 -20mA -100mA -10mA -10mA, 100MHz

    BC516 equivalent

    Abstract: BC516
    Text: BC516 BC516 PNP Darlington Transistor • This device is designed for applications reguiring extremely high current gain at currents to 1mA. • Sourced from process 61. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings TA=25°C unless otherwise noted


    Original
    PDF BC516 BC516 equivalent BC516

    BC516

    Abstract: hFE kec BC516 equivalent
    Text: SEMICONDUCTOR BC516 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 016 1 2 K BC516 2. Marking 3 4 No. 2003. 12. 11 Item Marking Description Device Name BC516 BC516 Lot No. 016 KEC K KEC CORP. hFE Grade - - Revision No : 0 Year 0~9 : 2000~2009


    Original
    PDF BC516 BC516 hFE kec BC516 equivalent

    T0220

    Abstract: BDT62C 2SB1647 BC516 BCV26 BD678 BD680 BDX47 BSP61 T0-220
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 C O C TaB H bie TpaH 3M C TO pbl PNP copTMpoBKa no TOKy KonneKTopa Kofl: BC516 BCV26 MPSA64 BDX47 BSP61 TIP117 BD678 BD680 BD680A BD682 MJF127 TIP125 TIP127 2SB1624 2SB1020 2SB1254


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    PDF BC516 BCV26 MPSA64 BDX47 T0126 BSP61 OT223 TIP117 T0220 BD678 T0220 BDT62C 2SB1647 BD680 T0-220

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC516 T E C H N I C A L DATA E PITA X IA L PLANAR PNP TRA N SIST O R G E N E R A L PU R PO SE HIGH D A RL IN G T O N TRA N SISTO R. DIM M ILLIM ETER S 4.70 MAX M A X IM U M RATING Ta=25°C 4.80 MAX 3.70 MAX CHARACTERISTIC Collector-Base Voltage


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    PDF BC516 -100mA 100MH

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE D bbSBTBl 0DE755b fiOO BC517 l IAPX SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic TO-92 envelope. P-N-P complement is BC516. Q U IC K R E F E R E N C E D A T A v CEO max. 30 V Collector-base voltage open emitter


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    PDF 0DE755b BC517 BC516.

    Untitled

    Abstract: No abstract text available
    Text: J BC 516 BC 517 COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS The BC516 PNP and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain.


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    PDF BC516 BC517 T0-92F 400mA 625mW 0430B 0650B 4300B 6500B 20MHz

    BC516

    Abstract: BC517 HFE-30
    Text: N AMER P H I L I P S / D I S C R E T E bTE D • b b5 3T 31 G0E755b Ô00 L '' BC517 SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic T O -92 envelope. P-N-P complement is BC516. Q U IC K R E F E R E N C E D A T A


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    PDF bb53T31 G0E755b BC517 BC516. BC516 BC517 HFE-30

    BC517

    Abstract: BC516 bc516 micro electronics bc 517
    Text: BC 5 1 6 BC 5 1 7 COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS JP*. %. CASE T0-92F The BC516 PNP and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence


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    PDF BC517 T0-92F 400mA 625mW 100mA BC516 20MHz 80x69477 bc516 micro electronics bc 517

    bc516

    Abstract: transistor BC516 transistor 257
    Text: Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 emitter • Very high DC current gain (min. 30000). 2 base 3 collector APPLICATIONS • Where very high amplification is required.


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    PDF BC516 BC517. MAM303 bc516 transistor BC516 transistor 257

    BC516

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BC516 PNP Darlington transistor 1999 Apr 23 Product specification Supersedes data of 1997 Apr 16 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP Darlington transistor BC516 FEATURES


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    PDF BC516 BC517. 115002/00/03/pp8 BC516

    Untitled

    Abstract: No abstract text available
    Text: BC517 _ SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar d a rlin g to n transistor in a plastic TO 92 package. P-N-P com plem ent is BC516. Q UICK REFERENCE D A T A v CEO max. Collector-base voltage open em itter 30 V v CBO max. 40 V


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    PDF BC517 BC516.

    BC517

    Abstract: BC516 bc516 micro electronics
    Text: J BC 516 BC 517 COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS J The BC516 PNP and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain.


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    PDF BC516 BC517 T0-92F 400mA 625mW 100nA 100mA 20MHz bc516 micro electronics

    MN2488

    Abstract: T0220 T0126 MJ11033-MOT 2SD2390 mn2488 pnp BCV27 BCV47 BD678 BSP61
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 C O C TaB H bie TpaH 3M C TO pbl PNP copTMpoBKa no HanpflweHMro Kofl: BCV27 MPSA64 BC516 BD675A BD678 BSP61 TIP125 BCV47 BD648 BD680 BD680A MJ2501 2N6287 2SB1020 BD682 BD712 BD902 BDV64B BDW84C


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    PDF BCV27 MPSA64 BC516 BD675A T0126 BD678 BSP61 OT223 TIP125 MN2488 T0220 T0126 MJ11033-MOT 2SD2390 mn2488 pnp BCV47

    tr bc548

    Abstract: No abstract text available
    Text: This I Material tn □ tr t-1 fcH UJ □ Copyrighted □ Pro Electron Bipolar Devices V ’ ces * Device No. Case Style xa tn V CBO V Min V tceo V EBO (V) Min (V) Min 20 5 (continued) *CBO w »FE (nA)@ CB Max (V) h„ 50 85 60 5 500 1A 10 1 1 0.5 375 30K


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