TRANSISTOR 30 J 124 Search Results

TRANSISTOR 30 J 124 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 30 J 124 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
tr 30 f 124 Abstract: Q67000-S172 ss124 Text: BSS 124 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.5 .2.5 V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 124 400 V 0.12 A 28 Ω TO-92 SS 124 Type BSS 124 Ordering Code Q67000-S172 S Tape and Reel Information	Original	PDF	Q67000-S172 E6288 tr 30 f 124 Q67000-S172 ss124
Untitled Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power	Original	PDF	RD04HMS2 175MHz, 950MHz, RD04HMS2 VHF/UHF/890-950MHz 14dBtyp. 950MHz UHF/890-950MHz
mos 4069 Abstract: No abstract text available Text: < Silicon RF Power MOS FET Discrete > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power	Original	PDF	RD04HMS2 175MHz, 950MHz, RD04HMS2 VHF/UHF/890-950MHz 14dBtyp. 950MHz UHF/890-950MHz Oct2011 mos 4069
RD04HMS2 Abstract: JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445 Text: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING	Original	PDF	RD04HMS2 175MHz, 950MHz, 14dBtyp. 950MHz UHF/890-950MHz RD04HMS2 JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445
RD04HMS2 Abstract: Handling Precautions for MOSFET 043mm 14dBtyp Text: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING	Original	PDF	RD04HMS2 175MHz, 950MHz, RD04HMS2 VHF/UHF/890-950MHz 14dBtyp. 950MHz UHF/890-950MHz Handling Precautions for MOSFET 043mm 14dBtyp
qm300dy-h Abstract: qm50dy-h QM150DY-H QM1Q 150DY qm200dy-hk 150DY-HBK QM15 QM30d QM30c Text: Transistor modules Double arm ,center tap V cêx h 8 I j-r Type No. Pe Transistor section Ve ¥ e (sus) (V) (A) (A) (Wl p (A) 600 30 1.8 250 150 30 QMSOCY-H 600 50 3 310 150 QM75CY-H 600 75 4.5 350 150 QMtOOCY-H 600 100 6 620 150 100 QM150CY-H 600 150	OCR Scan	PDF	QM75CY-H QM150CY-H QM30CY-H qm300dy-h qm50dy-h QM150DY-H QM1Q 150DY qm200dy-hk 150DY-HBK QM15 QM30d QM30c
LP1983 Abstract: motorola 039 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LP1983 The RF Line NPN Silicon High-Frequency Transistor . . . designed primarily for use in high-gain, low-noise, small-signal amplifiers. lc = 30 mA HIGH-FREQUENCY TRANSISTOR NPN SILICON • High Current-Gain — Bandwidth Product — f j = 4.5 GHz Typ	OCR Scan	PDF	LP1983 MRF901 Temperat13 IS22I LP1983 motorola 039
RTM 866 - 485 Abstract: No abstract text available Text: 32E J> • 023ti32Q OGlb^QH 1 « S I P NPN Silicon RF Transistor BFP 93A .SIEMENS/ SPCLi S E M I C O N D S _ • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions!	OCR Scan	PDF	023ti32Q BFP93A 62702-F OT-143 RTM 866 - 485
Untitled Abstract: No abstract text available Text: - 3 3 H 3 RZ3135B50W PHILIPS INTERNATIONAL 5bE ]> • Tiio aat. 0 0 4 ^ 0 2 124 ■ p h in PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power am plifier w ith a frequency range o f 3.1 to 3.5 GHz.	OCR Scan	PDF	RZ3135B50W
ic TT 2222 Abstract: transistor tt 2222 philips carbon film resistor carbon resistor TT 2222 npn TT 2222 BLW98 transistor blw98 Text: PHILIPS INTERNATIONAL bSE D • PHIN 711Dfl5b 00b3432 124 JL BLW98 U.H.F. LINEAR POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear u.h.f. amplifiers o f T V transposers and transmitters in band IV-V, as well as fo r driver stages in tube systems.	OCR Scan	PDF	711005b 00b3432 BLW98 D0b344D ic TT 2222 transistor tt 2222 philips carbon film resistor carbon resistor TT 2222 npn TT 2222 BLW98 transistor blw98
Untitled Abstract: No abstract text available Text: KSC3074 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER SWITCHING • C om p le m en t to K SA 1244 ABSOLUTE MAXIMUM RATINGS Symbol C haracteristic Rating Unit C o lle cto r Base Voltage C o lle cto r E m itter V oltage VCBG j 60 V VCEO I 50 Em itter Base Voltage	OCR Scan	PDF	KSC3074
2SD1762 Abstract: 230S d1760 D1864 Text: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1 ) Low VcE(sat). VcE(sat) = 0.5V (Typ.) (Ic/ I b = 2A/0.2A) 2) Complements the 2SB1184/ 2SB 1243/2SB1185. •S tru c tu re Epitaxial planar type	OCR Scan	PDF	2SD1760/2SD1864/2SD1762 2SB1184/ 1243/2SB1185. 2SD1760 2SD1864 2SD1762 O-126 O-220, 0Dlb713 230S d1760 D1864
MEL78D Abstract: No abstract text available Text: DESCRIPTION M E L 78D transistor rejective features sensitivity CRO is NPN silicon planar photowith 3mm dim eter light filter epoxy package. It ultra high. illum ination and fast response time. <°-124> n 5.3 • • NPN SILICON PHOTO TRANSISTOR A,ì dimension in mm incb	OCR Scan	PDF	MEL78D 100itA 100/iA of2354Â
Untitled Abstract: No abstract text available Text: KSC3076 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS • Low Collector Emitter Saturation Voltage • Complement to KSA 1241 ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol j C o lle cto r Base Voltage C o lle cto r E m itter Voltage Vceo	OCR Scan	PDF	KSC3076

HA12413 Abstract: 2SC458 C,D 2SA1029 2SC458 transistor 2sc458 Peak level meter ic Audio Circuit with IC 701 Text: H A 1 2 4 1 3 FM/AM IF SYSTEM The H IT A C H I H A 12413 is an IC fo r FM /A M IF system. Typical applications include cassette radios and modular stereos, fu n ctio ning and featuring as follow s. • FUNCTI ONS FM • IF A m p lilfie r With C.F. is inserted between the stages	OCR Scan	PDF	HA12413 DP-16) 33dBju) --45dB --10dBju) 455kH 2SC458 C,D 2SA1029 2SC458 transistor 2sc458 Peak level meter ic Audio Circuit with IC 701
BSS124 Abstract: No abstract text available Text: SIEMENS BSS 124 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1-5 -2.5 V Pin 1 Pin 2 G Type BSS 124 Vos 400 V % 0.12 A Type BSS 124 Ordering Code Q67000-S172 %S(on) 28 0 Pin 3 D Package Marking TO-92 SS 124 S Tape and Reel Information	OCR Scan	PDF	Q67000-S172 E6288 BSS124
Untitled Abstract: No abstract text available Text: SIEMENS BSS 124 S IP M O S Sm all-Signal Transistor • N channel • Enhancement mode ^GS th = 1-5 .2.5 V Pin 1 Pin 2 D G Type ^DS BSS 124 400 V Type BSS 124 Ordering Code Q67000-S172 0.12 A Pin 3 f f DS(on) Package Marking 28 £1 TO-92 SS 124 S Tape and Reel Information	OCR Scan	PDF	Q67000-S172 E6288
RCA-CA124 Abstract: CA324 CA124 CA224 92CS-24Z06 ca3243 transistor S67 ic lm324 LM324 transistor v15 Text: Operational Amplifiers _ 5 ' H _ C A 124, C A 224, C A 324, L M 3 2 4 * Q uad Operational Amplifiers For Com m erical, Industrial, and M ilitary Applications Features: • ■ • • ■ ■ • O p é ra tio n fro m s in g le o r d u a l s u p p lie s	OCR Scan	PDF	CA124, CA224, CA324, LM324 CA324 CA124 RCA-CA124, RCA-CA124 CA124 CA224 92CS-24Z06 ca3243 transistor S67 ic lm324 LM324 transistor v15
74LS247 Abstract: 75492 TTL 74ls247 ttl 74141 9T TRANSISTOR 74LS248 MA5558 D135 D141 D143 Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE I26 75492, 9664 124 9613 [14 □ 13 □ 12 □ 11 □ 10 □ 9 □ 8 □ 8 OUTPUT A □ Vcc □ OUT B 7 2 +IN A Q 3 -IN A ^ 4 GND 6 □ +IN B 5 □ -IN B 2 OUT D Vss OUT C OUT C IN C I27 I28 mA5SS 131 7528, 7529	OCR Scan	PDF	mA2240 mA555 74LS247 75492 TTL 74ls247 ttl 74141 9T TRANSISTOR 74LS248 MA5558 D135 D141 D143
HEMT marking P Abstract: No abstract text available Text: SA NY O S E M I C O N D U C T O R CORP T W O T b SEE D OOObTOO 3 T-3Ì - IS 2SK1240-1243 HEMT Series 2072 2073 N-Channel AIGaAs/GaAs Hetero Junction FET X-Band Very Low-l\loise Amp Applications 3186 Features • Very low noise & ' High associated gain	OCR Scan	PDF	2SK1240-1243 2SK1241 2SK1243 HEMT marking P
RCA LM324 Abstract: LM324L Text: Operational Amplifiers HARRIS S E M I C O N D U C T O R RCA C A 124, C A 224, CA324, C A 2902, LM 324, LM 2902 INTERSIL May 1990 Quad Operational Amplifiers For Commercial, Industrial, and Military Applications Features: A pp lica tio n s: • a a a ■	OCR Scan	PDF	CA324, CA224, CA2902, LM324, LM2902 CA124 CA124, RCA LM324 LM324L
2SK1240-1243 Abstract: pa 2030a 2SK1241 2SK1240 2SK1242 2SK1243 Text: SANYO SEMICONDUCTOR CORP SEE 7T1707b D GOObTOO 3 T-3Ì -ZS 2SK1240-1243 HEMT Series 2072 N -C hannel AIGaAs/GaAs H etero J u n c tio n FET 2073 X-Band Very Low-l\loise Am p Applications 3186 F e a tu re s • Very low noise • High associated gain &	OCR Scan	PDF	2SK1240-1243 2SK1241 2SK1243 2SK1240-1243 pa 2030a 2SK1240 2SK1242 2SK1243
dvr circuit diagram Abstract: st l 9302 transistor d145 mos 9368 9374 f 9368 7 seg bcd 74LS49 D133 D142 Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE I26 75492, 9664 124 9613 [14 □ IN D 13 □ OUT 12 □ OUT 11 □ Vss 10 □ OUT 9 O UT □ 8 □ IN C 8 OUTPUT A □ V cc 7 2 +IN A Q □ OUT B 6 3 -IN A ^ □ +IN B 5 4 GND □ -IN B CONTROL p VOLTAGE 4 - D	OCR Scan	PDF	mA2240 mA555 dvr circuit diagram st l 9302 transistor d145 mos 9368 9374 f 9368 7 seg bcd 74LS49 D133 D142
FRG25AA60 Abstract: diode B87 SANSHA FRG25AA FRG25AA40 H150 Text: SANSHA ELECTRIC MFC CO SbE 7^1243 D 00 00 47 1 FRG25AA40/60 SEM J Ô77 X-z^-o^ F R G 2 5 A A is a medium power isolated mould diode suitable for high frequency application. • • • • • High Speed t r r ^ 2 0 0 n s If av>= 25A Isolated Mould devices with ViSo = 2500V	OCR Scan	PDF	FRG25AA40/60 FRG25AA trrg200ns FRG25AA40 FRG25AA60 FRG25AA60 diode B87 SANSHA H150

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TRANSISTOR 30 J 124 Search Results

TRANSISTOR 30 J 124 Result Highlights (5)

TRANSISTOR 30 J 124 Datasheets Context Search

tr 30 f 124

Untitled

mos 4069

RD04HMS2

RD04HMS2

qm300dy-h

LP1983

RTM 866 - 485

Untitled

ic TT 2222

Untitled

2SD1762

MEL78D

Untitled

HA12413

BSS124

Untitled

RCA-CA124

74LS247

HEMT marking P

RCA LM324

2SK1240-1243

dvr circuit diagram

FRG25AA60