MN6147
Abstract: mn1400 MN6147 c L-13 MN6049
Text: MICROCOMPUTER and PERIPHERAL L S I’s P eriph eral L S I's E le c t r ic a l C h a r a c te ris tic s Fu nctio n T y p e No. CM O S F req u en cy M N6049 S y n th e s iz e r for TV T a = 2 5 "C PLL M N 6 14 2 Fre q u e n cy S y n th e s iz e r for FM /A M
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MN6049
12-Bit
58MHz)
200Hz
450kHz
MN6I42
16-Lead
MN1400
MN6049
MN6I45
MN6147
mn1400
MN6147 c
L-13
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Untitled
Abstract: No abstract text available
Text: INTRODUCTORY S « C lf o n o « l* S £ 0 ON fVilUAtlOH Of liMTEO H U M « * Of OCVKES - 4 8 V to + 5 V O u tp u t S w itc h in g D C -D C C o n v e rte r The MAX650 features user-controllable operating fre quency and a separate low voltage detector with adjust
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MAX650
250mA
230mA
MAX650ACPO
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MGB81DH
Abstract: MOB81DH MOB81DRH MSB81DH MUB81DH MYB81DH
Text: CRO DESCRIPTION This series lamps are low current high efficiency LED, encapsulated in a 2.37mm x 4.9mm round rectangular bars package with 1 inch lead. MGB81DH is a green LED with green diffused lens. MOB81DH is a orange LED with orange diffused lens. MOB81DRH is a high efficiency red LED with red diffused lens.
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MOB81DRH
MSB81DH
MUB81DH
MYB81DH
MGB81DH
MOB81DH
MYB81DH
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product SDecification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface
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BUK562-100A
SQT404
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2N3798
Abstract: 2N3799
Text: Datasheet ^ ^ ^^ ^ _ ^^ • tm 2N3798 2N3799 WSem G iconductor I I I i II 1 Corp. PNP SILICON TRANSISTOR 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-18 CASE M anufacturers of W orld C lass Discrete S em iconductors
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2N3798
2N3799
2N3798,
2N3799
500jtiA
500jtiA,
30MHz
100MHz
100kHz
2N3798
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toco
Abstract: KSD227
Text: SAMSUNG SEMICONDUCTOR INC 1ME KSD227 | T'lfc.MlMa □ OOb'IflO 2 | NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to K8M42 • Collector Dissipation Pc-400mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit
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KSD227
K8M42
400mW
lc-100fiA,
lo-10mA,
toco
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pt331c
Abstract: PT331 Phototransistors PT202C
Text: 24 D EVERLIGHT ELE CTRONICS 341S7G3 □□□□□□? 5 PHOTOTRANSISTORS • PHOTOTRANSISTORS MODEL: PT202C /PT331C ■ GENERAL DESCRIPTION T h e P T 2 0 2 C a n d P T 3 3 1 C are S ilicon Nitride P a ssiv a te d N P N planar Phototransistors with exceptionally stable characteristics a n d high illumination sensitivity. T h e c a s e s of
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G0GG007
PT202C/PT331C
PT202C
andPT331C
PT331C
PT202C
20mW/cm
20mWi
PT331
Phototransistors
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