Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power
|
Original
|
PDF
|
RD04HMS2
175MHz,
950MHz,
RD04HMS2
VHF/UHF/890-950MHz
14dBtyp.
950MHz
UHF/890-950MHz
|
RD04HMS2
Abstract: JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445
Text: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING
|
Original
|
PDF
|
RD04HMS2
175MHz,
950MHz,
14dBtyp.
950MHz
UHF/890-950MHz
RD04HMS2
JAPANESE TRANSISTOR 2010
920MHz
TRANSISTOR 636
RD04HMS
Diode mark 1445
|
RF MOSFET
Abstract: MRF141G
Text: LPioaucti, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF MOSFET Line RF Power Field-Effect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies
|
Original
|
PDF
|
MRF141G
14dBTyp)
100mA)
175MHz)
RF MOSFET
MRF141G
|
mos 4069
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power
|
Original
|
PDF
|
RD04HMS2
175MHz,
950MHz,
RD04HMS2
VHF/UHF/890-950MHz
14dBtyp.
950MHz
UHF/890-950MHz
Oct2011
mos 4069
|
RD04HMS2
Abstract: Handling Precautions for MOSFET 043mm 14dBtyp
Text: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING
|
Original
|
PDF
|
RD04HMS2
175MHz,
950MHz,
RD04HMS2
VHF/UHF/890-950MHz
14dBtyp.
950MHz
UHF/890-950MHz
Handling Precautions for MOSFET
043mm
14dBtyp
|
O10050
Abstract: No abstract text available
Text: 2.4GHz Band Chip 0 deg. Splitter / Combiner Model No. SLH-240 Equivalent Circuits r . N Shape & Size < - o '-0 H < k >f o_ >r _> o r J DO— ^ ©3 <D 30 -o© € © (D > > > m ® jg f o> in (Sum port @ Out-1 © 0ut-2 Ij, © © > © Ground
|
OCR Scan
|
PDF
|
SLH-240
14dBTyp.
200mW
SLH-240
100Max
110Min
20Box
3000pcs
3000pc
IA-481
O10050
|
BASS mid TREBLE CIRCUIT
Abstract: M62413FP bass mid treble control circuit BB02
Text: MITSUBISHI SOUND PROCESSOR ICs M62413FP ELECTRONIC SOUND CONTROL WITH ELECTRONIC VOLUME FOR MULTIPLE SOURCES DESCRIPTION The M 6 2 41 3F P Integrated Circuit is developed for audio-visual equipment. It being used for controls sound in the power amplifier fro nt stage.
|
OCR Scan
|
PDF
|
M62413FP
M62413FP
l58ll57l
BUFL02
24ipS
l26Jl27l
BASS mid TREBLE CIRCUIT
bass mid treble control circuit
BB02
|
3SK129
Abstract: 3SK132 3SK141 3SK137 3SK131 3SK143 3SK136 SDG201 3SK133 3SK128
Text: - 178 - f §¡J £ it € m & m Ä 1 V* + h K V m* I* & * (V) P d/ P c h (A) ft t t S 4* $ 7> * m Ig s s (max) (A) Vg s (V) 3SK127 UHF RF/M1X MOS N DE 15 DS ±8 0 30m D 150m ±50n ±6 3SK12S UHF LN A MOS N DE 15 DS ±8 30m D 200m ±20n ±8 (Ta=25‘
|
OCR Scan
|
PDF
|
3SK127
3SK128
3SK129
3SK131
3SK132
13dBmin/15dBtyp
800MHz
3SK143
23dBtyp
50/200MHz
3SK141
3SK137
3SK143
3SK136
SDG201
3SK133
|
3SK97
Abstract: 3SK122 3SK121 3SK125 3SK101 3SK114 3SK87 3SK102 3SK112 3SK113
Text: - s tí: € ffl iÊ m iS V* II K V Vg s * tt* B ÍL UH F RF MOS N DE 15 DS ±8 B ÍL VHF RF M OS N DE 15 D S ±8 3SK85 B ÍL V H F RF MOS N DE 22 DS ±8 3SK87 NEC U H F RF MOS N DE 20 D S ±10 3SK88 NEC U H F RF MOS N DE 20 D S ±10 A-Sff. C h o p MOS
|
OCR Scan
|
PDF
|
3SK83
3SK85
3SK87
3SK88
200MHz
3SK114
16dBtyp
800MHz
3SK115
20dBtyp
3SK97
3SK122
3SK121
3SK125
3SK101
3SK114
3SK102
3SK112
3SK113
|
Untitled
Abstract: No abstract text available
Text: M irm O T METÄL 2.4GHz Band Chip 0 deg. Splitter I Combiner Model No. SLH-240 Equivalent Circuits Shape & Size < k î4 i » D In (Sum port \r v o _ _ m m /. @ Out-1 O) I*! (D *tr o a © Out-2 sa-. y (D(D(D •rr © <D Ground o > Com biners unit (mm)
|
OCR Scan
|
PDF
|
SLH-240
200mW
14dBTyp.
|
AM-132
Abstract: AMC-132
Text: M / A- CO M/ M I C R O E L E C T R O N I C S bTE ]> • 5 b 4 S 1 6 3 □ a 0 0 cil5 057 * M A C O High Performance Amplifiers, 10 dB Gain 5-200 MHz AM-/AMC-132 ■ + 4 9 dBm Typical Midband Third Order Intercept ■ + 2 9 dBm Typical Midband 1 dB Compression
|
OCR Scan
|
PDF
|
Sb45163
AM-/AMC-132
-13dB
-14dBTyp
AM-132
AMC-132
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SOUND PROCESSOR ICs M62413FP ELECTRONIC SOUND CONTROL WITH ELECTRONIC VOLUME FOR MULTIPLE SOURCES DESCRIPTION The M 62413F P Integrated Circuit is developed for audio-visual equipment. It being used for controls sound in the power amplifier front stage.
|
OCR Scan
|
PDF
|
M62413FP
62413F
BUFL02
BUFH02
|
Untitled
Abstract: No abstract text available
Text: an A M P com pany High Performance Amplifiers, 10 dB Gain 5 - 200 MHz AM-/AMC-132 V2.00 Features FP-8 • +49 dBm Typical Midband Third Order Intercept • +29 dBm Typical Midband 1 dB Compression 0.109 2.8 D IA THR U I 4 H O LE S / 0 312 MIN T Y P (7.9 MIN)
|
OCR Scan
|
PDF
|
AM-/AMC-132
25dBm
14dBTyp
|