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Century Spring Corp TO-1065CS TOR O=.481, W=.053
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TO-1065CS	Box			1	1 $5.5 10 $5.5 100 $5.227 1000 $4.1265 10000 $4.1265	Buy Now
Century Spring Corp TO-1063CS TOR, O=.147, W=.019
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DigiKey	TO-1063CS	Box			1	1 $3.75 10 $3.75 100 $3.561 1000 $2.81138 10000 $2.81138	Buy Now
Century Spring Corp TO-1062CS TOR, O=.161, W=.018
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DigiKey	TO-1062CS	Box			1	1 $3.81 10 $3.81 100 $3.621 1000 $2.85864 10000 $2.85864	Buy Now
Century Spring Corp TO-1069CS TOR O=.351, W=.074
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TO-1069CS	Box			1	1 $5.43 10 $5.43 100 $5.157 1000 $4.07138 10000 $4.07138	Buy Now
Century Spring Corp TO-1068CS TOR O=.302, W=.034
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DigiKey	TO-1068CS	Box			1	1 $5.3 10 $5.3 100 $5.0374 1000 $3.97688 10000 $3.97688	Buy Now

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TO106 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
to106 Abstract: NTE108 oscillatore 1ghz NTE108-1 NPN Transistor TO92 transistor amplifier 5v to 15v Text: NTE108 and NTE108−1 Silicon NPN Transistor High Frequency Amplifier Description: The NTE108 TO92 and NTE108−1 (TO106) are silicon NPN transistors designed for low−noise, high−frequency amplifiers, 1GHz local oscillatore, non−neutralized IF amplifiers, and non−saturating	Original	PDF	NTE108 NTE108-1 NTE108 200MHz -20dB) 500MHz to106 oscillatore 1ghz NTE108-1 NPN Transistor TO92 transistor amplifier 5v to 15v
Untitled Abstract: No abstract text available Text: 1061 Connectors Inlets/Outlets www.schurter.com/pg07 IEC Appliance Inlet C14/C18, Snap-in Mounting, Front Side, Solder or Quick-connect or Screw-on Terminal C14 C18 70° C 70° C Description Weblinks - Panel Mount: Snap-in version, Frontside - Appliance Inlet, Pin temperature 70 °C, protection class I or II	Original	PDF	com/pg07 C14/C18, E96454 250VAC; 50/60Hz to1061 to1061
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	PDF	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
T106 thyristor Abstract: S4008LS3 T106M Text: * Se le ka s ge ED Z NI E5 G 39 CO 716 E R #E ct L. U. c Pa ed le Fi TO-92 *TO-220 Isolated 3-lead Compak TO-202 TO-252 D-Pak TO-251 V-Pak A K G Sensitive SCRs 0.8 A to 10 A E5 General Description The Teccor line of sensitive SCR semiconductors are half-wave	Original	PDF	O-220 O-202 O-252 O-251 T106 thyristor S4008LS3 T106M
2N2458 Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253 Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386	Original	PDF	2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2N479 2N479A 2N2458 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
2SC1766C Abstract: BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 30 40 50 60 ~~g~~! ~olid§tlnc ~g ~gg~ ~g ~gg~ 25 25 25 30 30 30 35 35 100m 100m 100m 100m 600m 1.0 400m 400m 2SC394 2SC394 2SC394 PET8005 2N2410 BSS41 2N3973 2N3975 BC125B BC387 BFW32 HSE133	Original	PDF	2SC1766A 2SC1766B 2SC1766C 2SC1766D MM1941 MPS6512 MPS6513 TP5377 TP5376 HSE144 BFY16 2SC1335 DIODE 10N 40D 2SC306 2N2161 2N2210 2N1410A 2N1410 2N2197 semelab
2N3480 Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712 Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849	Original	PDF	E01702L JC500P MMBC1009F5 TEC9013H HSE130 2N4956 PN3565 A8T3392 2N3395 2N3480 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2SC644 S 2n3400 2SC712
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
bc 147 transistor Abstract: transistor BC 547B transistor BC 147 Transistor BC 547, CL 100 bc 104 npn transistor bc 106 transistor transistor BC 337-25 TO106 transistor bc 337-25 transistor transistor BC 147b Text: EPOXY TRANSISTORS •• CONTINENTAL DEVICE INDIA 3SE D 0Q0D014 b • T “ 3 i-ty ■ COMMERCIAL/ENTERTAINMENT APPLICATIONS • Device VCEO VCBO VEBO Volts Volts Volts min • min min hFE at bias fr IC VCE ICM PTA ICBO VCE sat mA Volts mA max mW max MA Voits	OCR Scan	PDF	0Q0D014 O-106 O-237 bc 147 transistor transistor BC 547B transistor BC 147 Transistor BC 547, CL 100 bc 104 npn transistor bc 106 transistor transistor BC 337-25 TO106 transistor bc 337-25 transistor transistor BC 147b
2n h 2222a Abstract: transistor 2222a to-92 transistor 2222a transistor 2n 2222 2n 2222A to-92 npn mml 600 pnp 2n 2222 transistor 2N917 33T4 Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 32E D • 23033=14 0000012 5 ■ PROFESSIONAL GRADE APPLICATIONS " VCEO VCBO VEBO Volts Volts Volts min min min Device hFE at bias min/max IC VCE ICM PTA mA Volts mA mW max max PTC W max Cob ts NF ICBO VCE sat fT	OCR Scan	PDF	2N917 O-237 2n h 2222a transistor 2222a to-92 transistor 2222a transistor 2n 2222 2n 2222A to-92 npn mml 600 pnp 2n 2222 transistor 33T4
BF 914 transistor Abstract: diode t 4148 33T4 transistor BF 914 Text: DIODES PROFESSIONAL GRADE GENERAL PURPOSE DIODES — CONT INENTAL DEVICE INDIA 32E D trr 4 nsec; dissipation 250 mW; IPM=225 mA. AXIAL LEAD * 23033^4 OOOODlfl 3 m T - 0 3 - c > 9 • . PIV Volts min VF@ Volts max IF mA CT 41 CT 42 CT 43 CT 44 25 40 50 75 100	OCR Scan	PDF	7I03-0? DO-35 BF 914 transistor diode t 4148 33T4 transistor BF 914
BFW 10 fet Abstract: transistor bf 494 bf 494 transistor BFW 10 A FET transistor bf 184 transistor BF 253 transistor bf 241 BF 184 transistor transistor bf 495 transistor bf 254 Text: 6091788 MICRO ELECTRONICS CORP_ 820 00652 D J 3 /~>7 MICRO ELECTRONICS CORP 02 DE \| bCH17fl0 DDDDbSS 1 V C E SA T CASE Pd (mVY) C Im A) V 'c CEO (V) min max Im A l V CE (V) 167 — — — — 1 3 3 2.5 4 max 'c fT min Cob Cre max N.F. (MHz)	OCR Scan	PDF	0000fc O-72J O-106 O-72G to-02 melf-002. BFW 10 fet transistor bf 494 bf 494 transistor BFW 10 A FET transistor bf 184 transistor BF 253 transistor bf 241 BF 184 transistor transistor bf 495 transistor bf 254
Untitled Abstract: No abstract text available Text: Ì 989963 CENTRAL SEMICONDUCTOR b i d e I oocm ns a _ 61C 00195'^ ^ « T POWER DARLINGTON TRANSISTORS EPOXY 6.0A 1C = TYPE NO . Ic VCEO Pd (Max) Tc=25°C Volts Watts VCE(S) @IC fT Min Amps Volts Amps Mh z hFE @IC Min - Max PNP Amps BDW23 BDW24 : 6.0 45 50	OCR Scan	PDF	BDW23 BDW24 BDW23A BDW24A BDW23B BDW24B BDW23C BDW24C BDX53E BDX54E
Untitled Abstract: No abstract text available Text: r C i : : ~ &L 61C SEMICONDUCTOR bî V l ' V i U t j ^ U UT-äiJ gQSïiSl^fëSilffiSÊ !? ®@L?g3. eOBBSPEOB g®BMie@6ieai9e€ p ®@Pß9. e©Bïfti’gil „ de _ n a ^ t a □ o a o 2 t . cï \| T - ff- o'? 1Ng2 i A 1N823Ä 1N825A 1N827A . 1N829A TEMPERATURE COMPENSATED	OCR Scan	PDF	1N823Ã 1N825A 1N827A 1N829A 1N821A CBR25Ser/es CBR30 0000SE3 O-105 O-106

BC148 Abstract: BC148 hfe maximum BC186 BC181 BC147 BC157 BC190 BC206 BC149 bc182l Text: Low Level and General Purpose Amplifiers TYPE POLA NO. RITY CASE M AXIM UM RATINGS Pd IC VCEO mW (mA) (V) HFE min V CE(sat) max IT Cob N.F. IC VCE max IC m in max max (mA) (V) (V) (mA) (M Hz) (MHz) (dB) 5 5 5 5 5 0.6 0.6 0.6 0.6 0.35 100 100 100 50 1 150	OCR Scan	PDF	BC107 BC108 BC109 BC110 BC113 O-106 BC114 BC132 BC148 BC148 hfe maximum BC186 BC181 BC147 BC157 BC190 BC206 BC149 bc182l
TRANSISTOR BC 208 Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187 Text: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2	OCR Scan	PDF	lbDT17flfl DDDDh43 O-106 O-92F to-02 melf-002. melf-006 to-237 TRANSISTOR BC 208 TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
BF117 Abstract: BF294 BF178 BF299 BC236 BF174 BF298 BC312 BF120 BF137 Text: High Voltage Transistors TYPE NO. POLA RITY CASE MAXIMUM RATINGS HFE Pd VCEO IC ICM* VCER* min mai mW (mA) (V) VCE(sat) IC (mA) VCE max (V) (V) IC (mA) fT min (MHz) Cob Cre* max (MHz) BC236 BC285 BC312 BC393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18 TO-18	OCR Scan	PDF	BC236 O-106 BC285 BC312 BC393 BC394 BC450 O-92F BC530 O-92A BF117 BF294 BF178 BF299 BF174 BF298 BF120 BF137
Untitled Abstract: No abstract text available Text: niCRO ELECTRONICS LTD SIE » • bDT17ôô ODGlOflT =153 ■ HEHK Medium Power Amplifiers and Switches TYPE NO. POLARITY T-27-01 CASE H MAXIM UM RATINGS Pd ImW 'c A) V CEO (V) FE V CE(SAT) ’c min max Im A) VCE (V) max 'c (V) (A) fT min Cob COMPLE max	OCR Scan	PDF	bDT17Ã T-27-01 2N4036 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B
SE4020 Abstract: fairchild to-106 se7055 BFX37 BFY57 BC532 2N2484 PN4889 2N3965 EN2484 Text: FAIRCHILD TRANSISTORS S M A L L S IG N A L LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING VCEO (Cont’d) Item DEVK: e n o . Pol arity NPN PNP 1 ^FE @ ic VCEO V Min Min/Max 60 100/300 PN4249 2 2N3965 60 3 BFX37 60 2N3962 f»FE mA 180/- mA Min/Max	OCR Scan	PDF	PN4249 2N3965 BFX37 2N3962 2N5961 SE4020 O-106 2N2484 EN2484 SE4020 fairchild to-106 se7055 BFY57 BC532 2N2484 PN4889 EN2484
SE4010 Abstract: 2N3565 TIS92 2N3692 TIS90 2N2924 PN3565 PN3566 PN3694 PN4249 Text: TYPE NO. P O L A R IT Y Low Level and General Purpose Amplifiers CASE M A X IM U M R A T IN G S Pd mW 'c (m A \| V CE(SAT) h fe V CEO (V) min max 'c (m A) V CE (V) max (V) 'c (m A ) fT m in (MHz) Cob N.F. max max (pF) (dB) PN3565 PN3566 PN3694 PN4249 PN4250	OCR Scan	PDF	PN3565 O-92A PN3566 PN3694 PN4249 PN4250 SE4010 2N3565 TIS92 2N3692 TIS90 2N2924
2N3563 Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088 Text: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE \| n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15	OCR Scan	PDF	D0D0S15 2N5088 2N5127 O-106 2N5131 2N5133 2N5209 2N5210 2N3563 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133
2N5815 Abstract: 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236 2N4238 2N4314 Text: Medium Power Amplifiers and Switches H P O L A R IT Y M A X IM U M R A T IN G S C A SE 2N4238 2N4239 2N4314 2N4400 2N4401 2N4402 N N P N N P TO-39 TO-39 TO-39 TO-92A TO-92A TO-92A 1000 1000 1000 5004 5004 500 ♦ 1 1 1 0.6 0.6 0.6 60 80 65 40 40 40 30 30 50	OCR Scan	PDF	2N4238 2N4235 2N4239 2N4236 2N4314 2N4400 O-92A 2N4402 2N4401 2N5815 2N5225 N5226 2N4971 2N5042 2N5143 2N4235 2N4236
2N4248 Abstract: 2N4142 transistor 2N4248 2N4143 CIL157 CIL157B CIL246 CIL258 CIL261 CIL223 Text: TO-106 EPOXY PACKAGE TRANSISTORS PNP Type vceo (V) Mir V EBO (V) Min CIL261 100 100 5.0 C1L251 80 80 2N42S4A 60 CtL241 V CBO No. (Ta=25°C, U nless Otherwise Specified) Electrical Characteristics Maximum Ratings (V) Min IcBO • m e hFE V CB lc (mA) & V CE	OCR Scan	PDF	O-106 CIL261 2N42S4A CtL241 C1L242 OL245 CIL246 CIL211 CIL212 OL213 2N4248 2N4142 transistor 2N4248 2N4143 CIL157 CIL157B CIL258 CIL223
CR508 Abstract: No abstract text available Text: 1989963 CENTRAL S E M I C O N D U C T O R ; GGSS vdts V R (volts) V R (RMS)<V0,ls) 61C O Q I S ^ ’T ' C / ' C J EM S 3.0-6.0 Amperes V rrm ' General Purpose Silicon Power Rectifier CR3005 CR3010 CR3020 CR3040 CR3060 CR3080 CR3100 CR3120 CR5005 CR5010	OCR Scan	PDF	CR3005 CR5005 CR6005 CR3010 CR5010 CR6010 CR3020 CR5020 CR6020 CR3040 CR508

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TO106 Price and Stock

Century Spring Corp TO-1065CS

Century Spring Corp TO-1063CS

Century Spring Corp TO-1062CS

Century Spring Corp TO-1069CS

Century Spring Corp TO-1068CS

TO106 Datasheets Context Search

to106

Untitled

C1383 NPN transistor collector base and emitter

T106 thyristor

2N2458

2SC1766C

2N3480

IC HXJ 2038

bc 147 transistor

2n h 2222a

BF 914 transistor

BFW 10 fet

Untitled

Untitled

BC148

TRANSISTOR BC 208

BF117

Untitled

SE4020

SE4010

2N3563

2N5815

2N4248

CR508