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    Infineon Technologies AG BFR360FH6327XTSA1

    RF TRANS NPN 9V 14GHZ TSFP-3
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    DigiKey BFR360FH6327XTSA1 Cut Tape 22,485 1
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    Verical BFR360FH6327XTSA1 33,000 3,000
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    Rochester Electronics BFR360FH6327XTSA1 3,115 1
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    BFR360FH6327XTSA1 Bulk 45
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    Infineon Technologies AG BFR360L3E6765XTMA1

    RF TRANS NPN 9V 14GHZ TSLP-3-1
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    DigiKey BFR360L3E6765XTMA1 Digi-Reel 14,175 1
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    Infineon Technologies AG BFR360FH6765XTSA1

    RF TRANS NPN 9V 14GHZ TSFP-3
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    DigiKey BFR360FH6765XTSA1 Cut Tape 7,714 1
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    BFR360FH6765XTSA1 Reel 3,000 3,000
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    Verical BFR360FH6765XTSA1 150,000 6,000
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    BFR360FH6765XTSA1 9,000 4,755
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    BFR360FH6765XTSA1 6,000 339
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    BFR360FH6765XTSA1 3,540 92
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    Arrow Electronics BFR360FH6765XTSA1 6,000 10 Weeks 3,000
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    BFR360FH6765XTSA1 3,540 1
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    Panasonic Electronic Components ERJ-B1BFR36U

    RES 0.36 OHM 1% 2W 1020
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    DigiKey ERJ-B1BFR36U Cut Tape 4,690 1
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    ERJ-B1BFR36U Reel 5,000
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    Panasonic Electronic Components ERJ-A1BFR36U

    RES 0.36 OHM 1.33W 2512 WIDE
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    DigiKey ERJ-A1BFR36U Reel 4,000
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    BFR36 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BFR36 Central Semiconductor Original PDF
    BFR36 Diode Transistor SMALL SIGNAL TRANSISTORS Scan PDF
    BFR36 Diode Transistor NPN Small Signal Transistors Scan PDF
    BFR36 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BFR36 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BFR36 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BFR36 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BFR36 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BFR36 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BFR36 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BFR36 SGS-Ates Misc. Data Book Scans 1975/76 Scan PDF
    BFR36 SGS-Ates Shortform Data Book 1977/78 Short Form PDF
    BFR36 SGS-Ates Semiconductor Data Book 1976/77 Scan PDF
    BFR36 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    BFR360 Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFR360F Infineon Technologies BFR360F preliminary Original PDF
    BFR360F Infineon Technologies Si RF Transistors, fT < 24 GHz; Package: PG-TSFP-3; VCEO (max): 6.0 V; IC(max): 35.0 mA; Ptot (max): 210.0 mW; fT (typ): 14.0 GHz; F (typ): 1.0 dB; Original PDF
    BFR360F Infineon Technologies NPN Silicon RF Transistor Original PDF
    BFR360FE6327 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 6V TSFP-3 Original PDF
    BFR360FE6327 Infineon Technologies TRANS GP BJT NPN 6V 0.035A Original PDF

    BFR36 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    clapp oscillator

    Abstract: bjt oscillator application note BJT phase shift oscillator AN061 AN-061 BBY58 BBY58-02V BFR360F bjt oscillator Varactor Diode RF
    Text: Application Note No. 061 Silicon Discretes W-CDMA 2.3 GHz VCO using BFR360F and BBY58-02V Features • Low phase noise of < -90 dBc / Hz at 10 kHz using a low Q resonator. • 0 dBm output power at low current consumption. 2 3 1 • Highly linear oscillation frequency


    Original
    PDF BFR360F BBY58-02V BFR360F AN061 clapp oscillator bjt oscillator application note BJT phase shift oscillator AN061 AN-061 BBY58 BBY58-02V bjt oscillator Varactor Diode RF

    2N2458

    Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386


    Original
    PDF 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2N479 2N479A 2N2458 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253

    BFR360L3

    Abstract: No abstract text available
    Text: BFR360L3 NPN Silicon RF Transistor Preliminary data  Low voltage/ Low current operation 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm  Low noise figure: 1.0 dB at 1.8 GHz 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360L3 EHA07536 Jul-01-2003 BFR360L3

    Untitled

    Abstract: No abstract text available
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360L3

    Untitled

    Abstract: No abstract text available
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360L3

    marking code CB SMD tr2

    Abstract: TRANSISTOR SMD MARKING CODE ce marking code CB SMD ic MARKING CODE SMD IC BFR360L3 BFR460L3 BFS360L6 BFS466L6 SMD 6PIN IC MARKING CODE SMD MARKING CODE 102c
    Text: BFS466L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR360L3


    Original
    PDF BFS466L6 BFR460L3, BFR360L3) marking code CB SMD tr2 TRANSISTOR SMD MARKING CODE ce marking code CB SMD ic MARKING CODE SMD IC BFR360L3 BFR460L3 BFS360L6 BFS466L6 SMD 6PIN IC MARKING CODE SMD MARKING CODE 102c

    BFR360F

    Abstract: AN077
    Text: BFR360F NPN Silicon RF Transistor • Low noise amplifier for low current applications • Collector design supports 5V supply voltage 2 3 1 • For oscillators up to 3.5 GHz • Low noise figure 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package • Qualified according AEC Q101


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    PDF BFR360F BFR360F AN077

    bfw34 diode

    Abstract: 2SC562 BSX70 LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386


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    PDF 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2N479 2N479A bfw34 diode LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34

    BFR360T

    Abstract: BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360T VPS05996 BFR360T BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325

    IC 7437

    Abstract: BFR360F
    Text: BFR360F NPN Silicon RFTransistor Preliminary data Low voltage/ low current operation For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm  Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360F te20mA Jun-22-2001 -j100 IC 7437 BFR360F

    Untitled

    Abstract: No abstract text available
    Text: BFS360L6 NPN Silicon RF Transistor* • Low voltage/ Low current operation 4 • For low noise amplifiers 3 5 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 6 1 • Low noise figure: 1.0 dB at 1.8 GHz • Built in 2 transitors TR1, TR2: die as BFR360L3


    Original
    PDF BFS360L6 BFR360L3)

    BFR360L3

    Abstract: No abstract text available
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation 3 • For low noise amplifiers • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz 1 2 *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360L3 Jul-07-2004 BFR360L3

    Untitled

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation 2 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360F Apr-14-2003 -j100

    fbs MARKING TRANSISTOR

    Abstract: No abstract text available
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360T VPS05996 EHA07524 Jan-28-2003 fbs MARKING TRANSISTOR

    BFR360L3

    Abstract: BFR380L3 BFS386L6 tr1150
    Text: BFS386L6 NPN Silicon RF Transistor 4 Preliminary data  Low voltage/ low current operation 3 5  For low noise amplifiers 2 6  For oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: TR1: 1.0dB at 1.8 GHz TR2: 1.1 dB at 1.8 GHz  Built in 2 Transistors TR1: die as BFR360L3,


    Original
    PDF BFS386L6 BFR360L3, BFR380L3) Jun-11-2003 BFR360L3 BFR380L3 BFS386L6 tr1150

    Untitled

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation 2 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360F Jan-29-2002 -j100

    s parameters 4ghz

    Abstract: No abstract text available
    Text: BFR360F NPN Silicon RFTransistor Preliminary data Low voltage/ low current operation For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm  Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360F Oct-26-2001 -j100 s parameters 4ghz

    marking FB

    Abstract: No abstract text available
    Text: BFR360T NPN Silicon RF Transistor* • Low voltage/ low current operation • For low noise amplifiers 2 3 1 • For Oscillators up to 3.5 GHz and Pout > 10 dBm • Low noise figure: 1.0 dB at 1.8 GHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360T marking FB

    Untitled

    Abstract: No abstract text available
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360T VPS05996 15cal

    BFR360L3

    Abstract: BFR193L3
    Text: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101


    Original
    PDF BFR360L3 BFR360L3 BFR193L3

    transitor RF 98

    Abstract: BFR360F E6327 GMA marking
    Text: BFR360F NPN Silicon RF Transistor Preliminary data  Low voltage/ low current operation 2 3  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 1  Low noise figure: 1.0 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360F transitor RF 98 BFR360F E6327 GMA marking

    BFR360T

    Abstract: SC75
    Text: BFR360T NPN Silicon RF Transistor 3 Preliminary data  Low voltage/ low current operation  For low noise amplifiers  For Oscillators up to 3.5 GHz and Pout > 10 dBm 2  Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original
    PDF BFR360T VPS05996 EHA07524 Jun-16-2003 BFR360T SC75

    C744

    Abstract: BC301-6 cp409 SGS-ATES c426 BFY72 sgs c426 Transistor 2N3866 BC119 sgs-ates BFR97
    Text: S G S -A T E S Semiconductors Transistors -N P N N P N Medium Po w er Transistors R EFEREN CE T A B L E 0.8 6* 6* «* 3* o u_ C ode BC119 BC300 BC301 BC302 BFR36 M ax P tot @ T * m b = 25 -C W 30 80 60 45 30 Max lc (A ) 1 7 7 7 0.3 @ lc (m A ) Min fr (MHz)


    OCR Scan
    PDF BC119 34546C BC300 31624X BC301 31625R BC302 BFR36 30946B BFR97 C744 BC301-6 cp409 SGS-ATES c426 BFY72 sgs c426 Transistor 2N3866 sgs-ates

    BFR36

    Abstract: Transistor BFR 39 transistor bfr36 Transistor BFR 38 multi-emitter transistor Transistor BFR 36 Transistor BFR 14 Transistor BFR 80 bfr18 BFR37
    Text: MULTI-EMITTER SILICON PLANAR NPN C A T V U L T R A -L IN E A R H IG H -G A IN T R A N S IS T O R The BFR36 is a m ulti-em itter silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. It is designed for C ATV -M A TV amplifier applications over a wide frequency range


    OCR Scan
    PDF BFR36 350MHI -61dB 159MHz -66dB MATV-200 Transistor BFR 39 transistor bfr36 Transistor BFR 38 multi-emitter transistor Transistor BFR 36 Transistor BFR 14 Transistor BFR 80 bfr18 BFR37