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    T05 TRANSISTOR Search Results

    T05 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    T05 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: US6T5 Transistors Low frequency amplifier US6T5 2 (6) (1) 1.7 0.2 1pin mark 0~0.1 0.17 0.77 2.1 ROHM : TUMT6 0.15Max. Abbreviated symbol : T05 !Equivalent circuit !Absolute maximum ratings (Ta=25°C) Limits Symbol −30 VCBO −30 VCEO −6 VEBO −2 IC


    Original     		PDF -370mV -75mA 15Max. 85Max.

    Untitled

    Abstract: No abstract text available
    Text: US6T5 Transistors Low frequency amplifier US6T5 2 (6) (1) 1.7 0.2 1pin mark 0~0.1 0.17 0.77 2.1 ROHM : TUMT6 0.15Max. Abbreviated symbol : T05 zEquivalent circuit zAbsolute maximum ratings (Ta=25°C) Limits Symbol −30 VCBO −30 VCEO −6 VEBO −2 IC


    Original     		PDF 15Max. 85Max. -370mV -75mA

    Untitled

    Abstract: No abstract text available
    Text: US6T5 Transistors Low frequency amplifier US6T5 2 (6) (1) 1.7 0.2 1pin mark 0~0.1 0.17 0.77 2.1 ROHM : TUMT6 0.15Max. Abbreviated symbol : T05 !Equivalent circuit !Absolute maximum ratings (Ta=25°C) Limits Symbol −30 VCBO −30 VCEO −6 VEBO −2 IC


    Original     		PDF -370mV -75mA 15Max. 85Max.

    2N1305 TEXAS INSTRUMENTS

    Abstract: 2N1307 TEXAS INSTRUMENTS 030i TRANSISTOR 2G374 2N711 TEXAS INSTRUMENTS 2N1305 2n388 texas instruments 2N404 transistor 2N711B 2n711
    Text: Germanium Transistors T ype C a se No. C o *" " 0 0 c <u o « o “ NPN 2N388 T05 A General 2N388A T05 A Purpose 2N1302 T05 A and Switching 2N1304 T05 A 2N1305 T05 A 2N1308 T05 A S P E C IA L C h a ra c te ris tic s M axim u m R a tin g s at 25°C amb. •¿z 0>


    OCR Scan     		PDF 2N388 2N388A 2N1302 2N1304 2N1306 2N1308 2G302 TIXM107/8 2N1305 TEXAS INSTRUMENTS 2N1307 TEXAS INSTRUMENTS 030i TRANSISTOR 2G374 2N711 TEXAS INSTRUMENTS 2N1305 2n388 texas instruments 2N404 transistor 2N711B 2n711

    zn1613

    Abstract: NKT0028 BFX84 T018
    Text: NPN Silicon Transistors IMPN S ilicon Transistors fo r high level audio applications Type Characteristics; at T.amb =25 C M a xim um ratings Case B F X 84 B F X 85 T05 T05 B F X 86 B F Y 50 B F Y 51 B FY 52 B F Y 53 N K T 0028 N K T 0128 N K T 10339 N K T 10439


    OCR Scan     		PDF 0V/150mA) 150mA/15mA) BFX84 zn1613 NKT0028 T018

    5C transistor

    Abstract: transistor 5c 5C-32 nato 5C-23 5C-24 5C-33 1MAA00237AAP 30CW C32C
    Text: Obtflobs. 5C Series Chassis Mounted T05 .W1^6 v w w w VW VW A range of finned heatsinks with hollow clamp screw to trap the transistor flange against dissipation seating. e = 30°C/W Body finish: Black anodised. Type Clamp Screw 5C 5C-20 Plastic Metal 5C-23


    OCR Scan     		PDF 5C-23 5C-24 5C-32 5C-33 1MAA00237AAP 5C transistor transistor 5c nato 1MAA00237AAP 30CW C32C

    esp 9a

    Abstract: S1300 transistor
    Text: Wfipl mLftm HEW LETT PACKARD Optical R eflective Sensors Technical Data HEDS-1200 High Resolution Infrared Sensor HEDS-1300 Precision Resolution Sensor Features D escription • Focused Emitter and Detector in a Single Package • T05 Package • Binning of Sensors by


    OCR Scan     		PDF HEDS-1200 HEDS-1300 HEDS1300 esp 9a S1300 transistor

    2n3055 tos

    Abstract: SE9331 fairchild semiconductors general purpose 2n3055 transistors 2N3054 2N3440 2N6233 BFX34 2N3792 fairchild 2n3055
    Text: Sem iconductors Fairchild Sem iconductors Silicon Power Transistors NPN Power Transistors Metal Can T05 REFEREN CE T A B L E MAX ra See small signal general purpose amplifier and high voltage sections | C H A R A C T E R IS T IC S @25‘ C in g s V Code


    OCR Scan     		PDF BFX34 35373H 2N3440 35374F 35380X SE9052 35381H 2N4914 35382D 2N4915 2n3055 tos SE9331 fairchild semiconductors general purpose 2n3055 transistors 2N3054 2N6233 2N3792 fairchild 2n3055

    150 amp transistors

    Abstract: 2n3055 tos BFR97 2n3055 sgs SGS-ATES fairchild semiconductors bfr36 BFR98 2N3054 2N6233
    Text: Sem iconductors Fairchild Sem iconductors Silicon Power Transistors N PN Power Transistors Metal Can T05 REFERENCE T A B LE See small signal general purpose a m plifier and high voltage sections M AX r a | in g s C H A R A C TE R IS TIC S @25‘ C V CE(sat)


    OCR Scan     		PDF BFX34 35373H 2N3440 35374F 19107X 2N1613 19145X 2N1711 34312F 2N1893 150 amp transistors 2n3055 tos BFR97 2n3055 sgs SGS-ATES fairchild semiconductors bfr36 BFR98 2N3054 2N6233

    2n3055 tos

    Abstract: fairchild semiconductors 2N3054 2N3440 2N6233 BFX34 SE9331 35382d Solidev
    Text: Semiconductors Fairchild Semiconductors Silicon Power Transistors NPN Power Transistors Metal Can T05 REFEREN CE T A B L E MAX ra See small signal general purpose amplifier and high voltage sections | C H A R A C T E R IS T IC S @25‘ C in g s V Code V CE O


    OCR Scan     		PDF BFX34 35373H 2N3440 35374F 35050B 2N3720 35049X 2N5490 T0220AB 35051X 2n3055 tos fairchild semiconductors 2N3054 2N6233 SE9331 35382d Solidev

    2n3055 tos

    Abstract: 2n3714 fairchild 10 amp npn power transistors 2N3715 FAIRCHILD 2N4915 2N3054 2N3440 2N6233 BFX34 SE9331
    Text: Semiconductors Fairchild Semiconductors Silicon Power Transistors NPN Power Transistors Metal Can T05 REFEREN CE T A B L E MAX ra See small signal general purpose amplifier and high voltage sections | C H A R A C T E R IS T IC S @25‘ C in g s V Pfo T T c—25“C


    OCR Scan     		PDF BFX34 35373H 2N3440 35374F 2N3713 3M54E 2N3714 2N3715 35BSIA 2N3716 2n3055 tos 2n3714 fairchild 10 amp npn power transistors 2N3715 FAIRCHILD 2N4915 2N3054 2N6233 SE9331

    2N5494

    Abstract: T066 2N3740 2N4911 T0-220AB 2N3741 2N4912 2N3719 T0220AB Solidev Semiconductors
    Text: Sem iconductors Solidev Silicon Power Transistors Silicon N P N /P N P Power Transistors— Up to 7 Am p REFER EN CE T A B L E E le c tr ic a l C h a r a c te r is tic s <TC — 25°C Veto V ) lc (A ) hFE at M in . M ax. Code 0 .7 2N 3053 NPN T05 60 40 0.7


    OCR Scan     		PDF 2N30S3 35059F 2N4911 35091F 2N4912 35092D 2N3740 35044R 2N3741 35045G 2N5494 T066 T0-220AB 2N3719 T0220AB Solidev Semiconductors

    2N3350

    Abstract: T052 2N3680 2S307 TIS23 transistor t05 2N2060 2N2223 2N2223A 2S306
    Text: Silicon Transistors Type Case No. c ^ o *“ 3= 0 Maxim um Ratings at25°C amb. FEATURES 2 C c <u o “ O P N P C h o p p er SP E C IA L Characteristics ' h FE V CB V CE V EB V V V 'c A Min. P .o, w mA V C E SA T ) fT Max. *C Min. mA M c/s 25306 T05 A -6


    OCR Scan     		PDF 2S306 2S307 N2432 2N3347 T05-2 N3348 N3349 2N3350 T052 2N3680 TIS23 transistor t05 2N2060 2N2223 2N2223A

    MPS3388

    Abstract: 2N3783 MPSS172 A5T3904 SDMFL 2N1711 2N1893 2N3704 pn4227 MPS3704
    Text: s L MICRODEVICES INC ~ 14 D lF | s D 4 f lû 3 b OODDDTÛ b ^ ~ D GENERAL PURPOSE AMPLIFIERS AND MEDIUM-SPEED SWITCHES TYPE 2N1711 CASE STYLE BVc b o bvCEO b v eb o 'CBO Min Min Min Max 75V .5 0 VI 7V 10nA @ 1 20 V 80 V 7V T05 VCB 9 60 V 20 35 75 100-300 40


    OCR Scan     		PDF 2N1711 PN1711 10mA/10V 150mA 2N1893 PN1693 10mA/10 PN3566 MPS3388 2N3783 MPSS172 A5T3904 SDMFL 2N3704 pn4227 MPS3704

    transistor t05

    Abstract: TIS60m 2N1507 2N1613 2N1711 2N1889 2N1890 2N1893 2N696 2N697
    Text: Case Type No. C onstruction see note 1 Silicon Transistors Maximum Ratings at25°C amb. SPEC IAL Characteristics FEATURES h hFE V CB V V CE V v EB V •c A 15 2 30 15 2 Min. Ptot W mA 0-2 10 50 20 0-2 10 50 20 Max. V CE(SAT) Min. mA 's mA Max. mA M c/s 200


    OCR Scan     		PDF TIXS12 TIXS13 1200t 2N696 2N697 2N698 2N1507 2N1613 2N1711 N3830 transistor t05 TIS60m 2N1889 2N1890 2N1893

    NPN pnp MATCHED PAIRS 2n2905A 2N2219A

    Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
    Text: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW


    OCR Scan     		PDF BS9365 2N4036 2N4037 BS3365 2N4030 2N4031 NPN pnp MATCHED PAIRS 2n2905A 2N2219A BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62

    2N3053 equivalent

    Abstract: f012 transistor t05 BC107 pnp equivalent 2n4036 equivalent BS9365 F112 BS9365F112 BC177 equivalent bc108 equivalent BS93G5
    Text: BS9000 Small Signal Transistors Absolute Maximum Rating 8 S Type Number 6 S 9360 F001 BS9360 F001 BS9360 F001 BS9360 F002 BS9360 F002 BS9360 F002 B S9360 F003 B S9360 F003 B S9360 F003 BS9360 F004 BS9360 F004 BS9360 F004 BS9360 F005 BS9360 F005 BS9360 F005


    OCR Scan     		PDF BS9000 BS9360 BFT32 BFT33 BFT34 B59360 2N3053 equivalent f012 transistor t05 BC107 pnp equivalent 2n4036 equivalent BS9365 F112 BS9365F112 BC177 equivalent bc108 equivalent BS93G5

    NKT 275 transistor

    Abstract: 2N6135 MD14 package
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF

    TRM401

    Abstract: BC140C ST6512 181T2 mt102 MD14 7G13 ST7200 81T2 A298
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. USA55191/33 15On0 50MSA USA55191/34 50MSA 2N6135 MT102 2SC118 2SC119 TRM401 BC140C ST6512 181T2 MD14 7G13 ST7200 81T2 A298

    BF109

    Abstract: 50kSA BFY99 MT75d 35834B MST15 MST60 RT5003 V643 MST30
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. D11C1B1 130kS D11C5B1 D11C7B1 50kSA D11C10B1 D11C11B1 D11C201B20 BF109 BFY99 MT75d 35834B MST15 MST60 RT5003 V643 MST30

    n4300

    Abstract: 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N1507 2N3419 2N1711
    Text: Case T ype No. C o n s tru c tio n see note 1 Silicon Transistors M a xim u m R a tin g s a t2 5 °C am b. S P E C IA L C h a ra c te ris tic s FE A T U R E S h h FE V CB V V CE V v EB V •c A 15 2 30 15 2 M in. P to t W mA 0-2 10 50 20 0-2 10 50 20 Max.


    OCR Scan     		PDF TIXS12 TIXS13 1200t 2N696 2N697 2N698 2N1507 2N1613 2N1711 2N3418 n4300 32Vj 2N1719 2N4000 2N696 TEXAS INSTRUMENTS transistor t05 XB412 2N3419

    2SC114

    Abstract: 2SA647 2SC114 transistor usaf516es047m TRM7015 2N2180 MD14 package 81T2 A249 A298
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2SC114 2SA647 2SC114 transistor usaf516es047m TRM7015 2N2180 MD14 package 81T2 A249 A298

    BFY99

    Abstract: BF109 2sc700 2sc113 transistor bf109 11C1F1 BC140D MT20 RT5001 RT5003
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. BSW88 200MSA 15On0 BSW89 BSX81 200M5A BSX81A BFY99 BF109 2sc700 2sc113 transistor bf109 11C1F1 BC140D MT20 RT5001 RT5003

    B3597

    Abstract: B3603 4JD7A35 2N2649 B3604 bfs23 BLY25 sdt1665 2N2485 MHT9003
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT


    OCR Scan     		PDF NPN110. 300MS BR101FS MT50a BR200B5 200MS BR201BS B3597 B3603 4JD7A35 2N2649 B3604 bfs23 BLY25 sdt1665 2N2485 MHT9003