T018 pin-out
Abstract: No abstract text available
Text: SAW Filters TMX T018 SAW Bandpass Filter – CDMA450 – Rx RF Specification Rev. 3 Package Drawing & Pinout .P01
|
Original
|
PDF
|
CDMA450
T018 pin-out
|
GRF342
Abstract: Relay circuit LAYOUT Duroid 6002 31PL
Text: SURFACE MOUNTING GRF342 RELAYS Application Note T0180 provides suggested surface mounting information and printed circuit board [PCB] artwork for circuit traces and RF ground plane configurations. Suggested information provided is intended for use with Teledyne Relays’ GRF342 surface
|
Original
|
PDF
|
GRF342
T0180
Relay circuit LAYOUT
Duroid 6002
31PL
|
Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 4413 LOW POW ER LA SE R D IO D E IN T018 PA CKA G E Package Dimensions in mm FEATU R ES Maximum Ratings * InGaAsP/lnP MCRW-Laser Diode Output power ratings refer to the totalemittedpower at frontwindow. The operating temperature of thesubmount isidentical with the case
|
OCR Scan
|
PDF
|
SFH4413
|
Untitled
Abstract: No abstract text available
Text: InN ET TE C H N O LO G IE S technologies 6 1 T0184S Electrical E L E C T R IC A L S P E C IF IC A T IO N S REV. 0 1 TURNS RATIO: (T X IN + ) (R X O + ) - (C TIN ) (R XO —) : ( T X IN - ) : (T X O + ) (R X IN + ) - (R X IN - ) (CTO) (T X O -) 1CT : 1CT ±
|
OCR Scan
|
PDF
|
T0184S
|
Untitled
Abstract: No abstract text available
Text: InN ET TE C H N O LO G IE S t e c n o lo gi es @ t T0181 Electrical E L E C T R IC A L S P E C IF IC A T IO N S REV. 0 2 TURNS RATIO: 1 -2 : 3 -4 : 5 -6 1 : 1 : 1 ± 3% INDUCTANCE: 1-2 200 uH MIN. @ 0 .1 V , 1 10KH z I 1 I 1 " LEAKAGE INDUCTANCE: 1 -2
|
OCR Scan
|
PDF
|
T0181
|
Untitled
Abstract: No abstract text available
Text: ' T •typeNo. Package vCEO ■c cont hF E @ V c e /Ic *T Pd HI-REL HI-REL HI-REL SCREEN SCREEN NPNP PNP NPN NPN NPN T039 T018 T018 T039 T039 12 20 80 80 0.2 0.2 1 1 30-120 30-120 80min 30min 0.5/30m 0.4/30m 5/lra 5/lm 400M 350M 100M 80M 0.36 0.36 0.8 0.8
|
OCR Scan
|
PDF
|
2N3008
2N3012
2N3014
2N3019
2N3020
80min
30min
5/30m
4/30m
2N3036
|
74ACTQ18823
Abstract: No abstract text available
Text: Q18823 NATIONAL SEIUCOND L06IC blE ]> • bSOllES DQTSBSI 1T4 BINSCl r - ¥ é ^ - /2 L National Semiconductor 74ACTQ18823 18-Bit D Flip-Flop with TRI-STATE Outputs General Description Features The 'AC T018823 contains eighteen non-inverting D flip flops with TRI-STATE outputs and is intended fo r bus orient
|
OCR Scan
|
PDF
|
L06IC)
74ACTQ18823
18-Bit
ACTQ18823
500ft,
|
Untitled
Abstract: No abstract text available
Text: SFH 216 SIEMENS SILICON PIN PHOTODIODE FEATURES Maximum Ratings * Package: 18 A3 DIN 41870 T018 , Glass Lens, Hermetically Sealed, Solder Tabs, Lead Spacing 0.1 ' (2.54 mm) O perating and Storage Tem perature Range (T0P T stg ) . - 40" 10 +80"C
|
OCR Scan
|
PDF
|
|
2N2894 FAIRCHILD SEMICONDUCTOR
Abstract: BC253C 2N4258 BC171 2N2907A FAIRCHILD SEMICONDUCTOR bc252b BC107 itt 2N3209 2N5023 BSX29
Text: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors P N P H igh Speed Saturated Sw itching Transistors M etal C a n T018, T 039 R EFEREN CE T A B L E For medium speed - see générai purpose section C H A R A C T E R I S T IC S M A X R A T IN G S
|
OCR Scan
|
PDF
|
BSX29
35322H
2N2894
35323F
N2894A
35324D
2N3209
35325B
2N5023
35326X
2N2894 FAIRCHILD SEMICONDUCTOR
BC253C
2N4258
BC171
2N2907A FAIRCHILD SEMICONDUCTOR
bc252b
BC107 itt
|
80139
Abstract: C1549C 098j C735-0 A356A UI-03 r140u
Text: 3_ tu THIRD AWQLg W O JEC rfO N is wpuBLf5HBP. I » n rojeo w » publication .19 SpWIHT !• T0180139 -20.07- p me L7K G REDRAWN u w R£V/S/0N5 / a* / ato ft/n/w 1 — ] eaaurnm C.7903 •18.03- ;v ■+-i C.710J &■ m IN 18.03±0.2S NYLON, UL 94V-0 RATED, BLACK.
|
OCR Scan
|
PDF
|
54/im
L-T-10727,
QQ-N-290.
80139
C1549C
098j
C735-0
A356A
UI-03
r140u
|
Bc177a
Abstract: No abstract text available
Text: 37E D SEMELAB LTD fll331fl7 DDD0031 5 ISMLB - y - X J - 01 — type No. Package Vc e o •c cont hFEc PD V c e /'C B C1 0 7 BC107A BC107B BC108 BC108A SCRE E N SCREEN SCREEN SCRE E N SCREEN NPN NPN NPN NPN NPN T018 T018 T018 T018 T018 45 45 45 20 20 0.1 0.1
|
OCR Scan
|
PDF
|
fll331fl7
DDD0031
BC107A
BC107B
BC108
BC108A
BC108B
BC108C
BC109
BC109B
Bc177a
|
Untitled
Abstract: No abstract text available
Text: INFRARED EMITTING DIODE T018 PACKAGE Preliminary Data Sheet Package Dimensions in mm Chip Loacation 1.95 1.65 0.35 0.25 Anode / . . A 04.80 04.55 i .27 Lead spacing: X Cathode GND 2.8 15.0 2.4 12.0 " T FEATURES Meximum Ratings • InGaAePflnP PIN Photodiode
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: SIEMENS ; SFM 4212 IRED T018PACKAGE Package Dimensions in rum FEATURES Maximum Ratings * InGaAsP/lnP-IRED * Emission Wavelength: 2"d Optical Window 1300 nm * Suitable for Bit Rates up to 50 Mbit/s * 200 Mbit/s with Appropriate Pulse Shaping of Modulation Current
|
OCR Scan
|
PDF
|
T018PACKAGE
|
LF50
Abstract: No abstract text available
Text: bOE D • fl23SbGS DDi4b551 57b « S I E G -7=<Y/-&7 SIEMENS SFH4210 SIEMENS AKTIENGESELLSCHAF INFRARED EMITTING DIODE T018PA C K A G E ^ ■L Preliminary Data Sheet FEATURES Maximum Ratings * InGaAsP/lnP IRED Operating Temperature Range at Case Tc Storage Temperature Range (T3To)
|
OCR Scan
|
PDF
|
fl23SbGS
DDi4b551
SFH4210
T018PA
LF50
|
|
|
BFX36
Abstract: 2N3904DCSM 2N3904D 2N3680 BFT39 2N2222ADCSM BFX11 BFY84 BLY11 BFT40
Text: 37E D SEMELAB LTD 31331B7 OOOODTb fl jl S E M E L A B MANUFACTURING! • c BS/CECC Polarity Package v CEO cont h F E BFT37 BFT39 BFT40 BFT41 BFT57 BS-0 BS-0 BS-0 BS-0 BS-0 PNP NPN NPN NPN NPN T039 T039 T039 T039 T018 100 80 60 50 160 5 1 1 1 0.2 50-200 250 typ
|
OCR Scan
|
PDF
|
fll331fl7
BFT37
BFT39
BFT40
BFT41
BFT57
BFT58
BFT59
BFT60
BFT61
BFX36
2N3904DCSM
2N3904D
2N3680
2N2222ADCSM
BFX11
BFY84
BLY11
|
2N2646
Abstract: 2N2647 2n 2646 NTS 10 s 2646 T018 gk1k 2646 nts1500
Text: Thyristors and Unijunctions Thyristors Case Type Plastic T018 T05 NTS 311 NTS 0660 N TS 1500 1 Maxim um ratings Characteristics @ 2 5 °C y FR^ V {FM A °C 30 60 500 0.6 0.6 1.0 150 150 150 V /°C 50 (3 0/12 5) — 1000 — (5 0 0 /8 5 ) 'h r mA V G T1
|
OCR Scan
|
PDF
|
|
3N225
Abstract: BF805 3N201 3N211 BF802 3N202 BF806 BF800 3N204 3N205
Text: mTexas In s tru m e n ts FET's For V H F A m p lifie rs and M ix e rs Type No. Case I g s s Vp Ciss Crss Pol max. max max. max. nA V pF 2N3823 T072 N 0.5 8 6 2N4416 T072 2N4416A T072 N N 0.1 0.1 6 6 4 4 0.8 0.8 4000 400 4000 10 2 N5549 N 0.25 6 8 2 6000 T018
|
OCR Scan
|
PDF
|
2N3823
2N4416
2N4416A
N5549
3N201
3N202
3N203
N203A
3N204
BF800
3N225
BF805
3N211
BF802
BF806
3N205
|
Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 4413 LOW POWER LASERDIODE IN T018PACKAGE P a c k a g e D im e n s io n s in m m 3 75 3 .2 5 150 1 1 .0 1.3 1 1" 0 0 .5 00 3 0 3 .7 0 3 .4 ^ I 1 57 1 37 M D .; LD [O l 0 I ¡A: E m ittin g F a ce t FEATURES Maximum Ratings • InGaAsP/lnP MCRW-Laser Diode
|
OCR Scan
|
PDF
|
T018PACKAGE
|
V405A
Abstract: BFR38 2N2907 plastic BFR99 BFY18 BFY64 sgs 2n2907a transistor 2N4033 2N2894 2N3209
Text: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors P N P High Speed Saturated Switching Transistors Metal Can T018, T039 R E FE R E N C E T A B L E For medium speed - see générai purpose section C H A R A C T E R IS T IC S M A X R A T IN G S
|
OCR Scan
|
PDF
|
BSX29
35322H
2N2894
35323F
N2894A
35324D
2N3209
35325B
2N5023
35326X
V405A
BFR38
2N2907 plastic
BFR99
BFY18
BFY64
sgs 2n2907a
transistor 2N4033
|
NTE153
Abstract: Nte 157 NTE123AP nte129 NTE159M nte123
Text: BI-POL AR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BV ceo BV ebo &FE T018 28a •c 0.8 BVcbo Amp, Audio to VHF Freq.,
|
OCR Scan
|
PDF
|
NTE159M)
NTE159)
T066-
NTE123A)
NTE153
Nte 157
NTE123AP
nte129
NTE159M
nte123
|
k 117
Abstract: k117 BAX65 BCW35 BCY30A BCY31A BCY32A BCY33A T0532 BCY39A
Text: SENELAB LTD 37E J> m A1331A7 OOODOTfl I SMLB S E M E L A B MANUFACTURING Polarity Package VCEO •c cont Diode Array NPN PNP PNP PNP T077 40 0.3 T018 T018 T 05 T 05 45 45 64 64 0.6 0.6 0.1 0.1 PNP PNP PNP PNP PNP T 05 T 05 T05 T 05 T 05 64 32 32 64 32 0.1
|
OCR Scan
|
PDF
|
BAX65
BCW34V
BCW35/,
BCY30A\
BCY31A-/
BCY32A
BCY33A
BCY34A
BCY39A"
BCY40A
k 117
k117
BCW35
BCY30A
BCY31A
T0532
BCY39A
|
H0A0872-n55
Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1
|
OCR Scan
|
PDF
|
1N5722
1N5723
1N5724
1N5725
1N6264
1N6265
1N6266
2004-90xx
2600-70XX
2N5777-80
H0A0872-n55
H0A1405-1
H0A0865-L51
h0a1405
HOA708-1
HOA9
til78 phototransistor
MOC70T3
ir diode TIL38
H0A1874-12
|
Untitled
Abstract: No abstract text available
Text: SIEMENS SFH2210 TERNARY PIN PHOTODIODE T018PA C K A G E P relim in ary Data Sheet Package Dimensions in mm Chip Location OD o —j^ FEATURES Maximum Ratings * InGaAs/lnP PIN Photodiode * Sensitive Receiver for the 2nd and 3rd Window 1300 nm and 1500 nm * Suitable for Bit Rates up to 1.2 Gbit/s
|
OCR Scan
|
PDF
|
SFH2210
T018PA
|
2369
Abstract: T018 T072 PN2368 NKT13329 13429 16229
Text: NPN Silicon Transistors N P N S ilic o n Planar T ransistors fo r high speed sw itching and high fre q u e n cy use Type M a x im u m ratings Case BSY 95A T018 T018 T018 T018 N K T 13329 N K T 13429 N K T 16229 PN 918 PN 2368 PN 2369 T018 T018 T072 Plastic T 0 1 8
|
OCR Scan
|
PDF
|
/10mA)
10mA/1mA)
2369
T018
T072
PN2368
NKT13329
13429
16229
|
