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    Vishay Siliconix SUM90N10-8M2P-E3

    MOSFET N-CH 100V 90A TO263
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    DigiKey SUM90N10-8M2P-E3 Cut Tape 4,782 1
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    SUM90N10-8M2P-E3 Digi-Reel 4,782 1
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    SUM90N10-8M2P-E3 Reel 4,000 800
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    Quest Components SUM90N10-8M2P-E3 4
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    New Advantage Corporation SUM90N10-8M2P-E3 5,600 1
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    Vishay Siliconix SUM90N03-2M2P-E3

    MOSFET N-CH 30V 90A TO263
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    DigiKey SUM90N03-2M2P-E3 Digi-Reel 233 1
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    SUM90N03-2M2P-E3 Cut Tape 233 1
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    SUM90N03-2M2P-E3 Reel 800
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    Vishay Siliconix SUM90N08-6M2P-E3

    MOSFET N-CH 75V 90A TO263
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    DigiKey SUM90N08-6M2P-E3 Digi-Reel 1
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    Vishay Siliconix SUM90N06-5M5P-E3

    MOSFET N-CH 60V 90A TO263
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    DigiKey SUM90N06-5M5P-E3 Reel 800
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    Vishay Siliconix SUM90N04-3M3P-E3

    MOSFET N-CH 40V 90A TO263
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    SUM90N04-3M3P-E3 Digi-Reel 1
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    SUM90N Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUM90N03-2M2P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 90A D2PAK Original PDF
    SUM90N04-3M3P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 90A D2PAK Original PDF
    SUM90N06-4M4P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 90A D2PAK Original PDF
    SUM90N06-5M5P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 90A D2PAK Original PDF
    SUM90N08-4M8P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 90A D2PAK Original PDF
    SUM90N08-6M2P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 90A D2PAK Original PDF
    SUM90N08-7M6P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 90A D2PAK Original PDF
    SUM90N10-8M2P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 90A D2PAK Original PDF

    SUM90N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUM90N06-5m5P O-263 SUM90N06-5m5P-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUM90N08-7m6P O-263 SUM90N08-7m6P-E3 18-Jul-08

    SUM90N10

    Abstract: 74643 sum90n10-8m2p
    Text: SUM90N10-8m2P Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 100 0.0082 at VGS = 10 V 90d 97 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUM90N10-8m2P O-263 SUM90N10-8m2P-E3 18-Jul-08 SUM90N10 74643 sum90n10-8m2p

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUM90N08-6m2P Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUM90N08-6m2P 18-Jul-08

    3809

    Abstract: 7483 AN609 28728
    Text: SUM90N04-3m4P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUM90N04-3m4P AN609 21-Jun-07 3809 7483 28728

    Untitled

    Abstract: No abstract text available
    Text: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUM90N08-7m6P O-263 SUM90N08-7m6P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUM90N06-5m5P O-263 SUM90N06-5m5P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SUM90N06-4M4P

    Abstract: No abstract text available
    Text: SUM90N06-4m4P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0044 at VGS = 10 V 90d 105 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUM90N06-4m4P O-263 SUM90N06-4m4P-E3 18-Jul-08 SUM90N06-4M4P

    Untitled

    Abstract: No abstract text available
    Text: SUM90N06-5m5P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 60 0.0055 at VGS = 10 V 90d 78.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUM90N06-5m5P O-263 SUM90N06-5m5P-E3 11-Mar-11

    SUM90N10-8m2P

    Abstract: SUM90N
    Text: SUM90N10-8m2P Vishay Siliconix N Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) () 100 0.0082 at VGS = 10 V ID (A) 90 d Qg (Typ) 97 • • • • TrenchFET Power MOSFETS 175 °C Junction Temperature 100 % Rg and UIS Tested


    Original     		PDF SUM90N10-8m2P 2002/95/EC O-263 SUM90N10-8m2P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SUM90N10-8m2P SUM90N

    SUM90N08

    Abstract: 4A88
    Text: SUM90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d 0.006 at VGS = 8 V 90 d • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % UIS Tested Qg (Typ)


    Original     		PDF SUM90N08-4m8P O-263 SUM90N08-4m8P-E3 18-Jul-08 SUM90N08 4A88

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SUM90N04-3m3P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUM90N08-7m6P O-263 SUM90N08-7m6P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SUM90N08-6m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0062 at VGS = 10 V 90d 75 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUM90N08-6m2P O-263 SUM90N08-6m2P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    QG60

    Abstract: No abstract text available
    Text: SPICE Device Model SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUM90N08-7m6P 18-Jul-08 QG60

    6077

    Abstract: 717 MOSFET na 7705 AN609
    Text: SUM90N03-2m2P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUM90N03-2m2P AN609 20-Jul-07 6077 717 MOSFET na 7705

    121-398

    Abstract: 4828 datasheet 4828 7483 transistor c 6073 AN609
    Text: SUM90N06-4m4P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUM90N06-4m4P AN609 21-Jun-07 121-398 4828 datasheet 4828 7483 transistor c 6073

    SUM90N04

    Abstract: No abstract text available
    Text: SUM90N04-3m3P_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SUM90N04-3m3P AN609, 9529m 6341m 0475m 8594m 6655u 4656m 9616m 17-Aug-11 SUM90N04

    74342

    Abstract: SUM90N03
    Text: New Product SUM90N03-2m2P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a, e 0.0022 at VGS = 10 V 90 0.0027 at VGS = 4.5 V 90 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested RoHS 82 nC


    Original     		PDF SUM90N03-2m2P O-263 SUM90N03-2m2P-E3 08-Apr-05 74342 SUM90N03

    uaa70

    Abstract: No abstract text available
    Text: SUM90N08-7m6P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT


    Original     		PDF SUM90N08-7m6P O-263 SUM90N08-7m6P-E3 08-Apr-05 uaa70

    Untitled

    Abstract: No abstract text available
    Text: SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () MAX. ID (A) d 0.0033 at VGS = 10 V 90 0.0041 at VGS = 4.5 V 90 Qg (TYP.) 87 • TrenchFET Power MOSFET • 100 % Rg and UIS tested


    Original     		PDF SUM90N04-3m3P O-263 SUM90N04-3m3P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SUM90N10

    Abstract: SUM90N10-8m2P
    Text: SPICE Device Model SUM90N10-8m2P Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUM90N10-8m2P 18-Jul-08 SUM90N10 SUM90N10-8m2P

    7447

    Abstract: 8807 datasheet 7447 AN609
    Text: SUM90N06-5m5P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUM90N06-5m5P AN609 18-Sep-07 7447 8807 datasheet 7447

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUM90N03-2m2P www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SUM90N03-2m2P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12