Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SUM90N04 Search Results

    SF Impression Pixel

    SUM90N04 Price and Stock

    Vishay Siliconix SUM90N04-3M3P-E3

    MOSFET N-CH 40V 90A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SUM90N04-3M3P-E3 Cut Tape
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    SUM90N04-3M3P-E3 Digi-Reel 1
    • 1 $1.89
    • 10 $1.89
    • 100 $1.89
    • 1000 $1.89
    • 10000 $1.89
    		Buy Now
    SUM90N04-3M3P-E3 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Vishay Intertechnologies SUM90N04-M3P-E3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SUM90N04-M3P-E3 27
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Others SUM90N043M3P

    AVAILABLE EU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SUM90N043M3P 1,600
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    SUM90N04 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUM90N04-3M3P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 90A D2PAK Original PDF

    SUM90N04 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3809

    Abstract: 7483 AN609 28728
    Text: SUM90N04-3m4P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUM90N04-3m4P AN609 21-Jun-07 3809 7483 28728

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SUM90N04-3m3P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SUM90N04-3m3P Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 d RDS(on) () Max. ID (A) 0.0033 at VGS = 10 V 90 0.0041 at VGS = 4.5 V 90 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SUM90N04-3m3P 2002/95/EC O-263 SUM90N04-3m3P-E3 11-Mar-11

    SUM90N04

    Abstract: No abstract text available
    Text: SUM90N04-3m3P_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SUM90N04-3m3P AN609, 9529m 6341m 0475m 8594m 6655u 4656m 9616m 17-Aug-11 SUM90N04

    Untitled

    Abstract: No abstract text available
    Text: SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () MAX. ID (A) d 0.0033 at VGS = 10 V 90 0.0041 at VGS = 4.5 V 90 Qg (TYP.) 87 • TrenchFET Power MOSFET • 100 % Rg and UIS tested


    Original     		PDF SUM90N04-3m3P O-263 SUM90N04-3m3P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    A 69157

    Abstract: 69157 mosfet 69157 V5805 SUM90N04-3m4P S-71488 S-71488Rev A7255
    Text: SPICE Device Model SUM90N04-3m4P Vishay Siliconix N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUM90N04-3m4P 18-Jul-08 A 69157 69157 mosfet 69157 V5805 SUM90N04-3m4P S-71488 S-71488Rev A7255

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SUM90N04-3m3P 11-Mar-11

    SUM90N04-3m3P

    Abstract: No abstract text available
    Text: New Product SUM90N04-3m3P Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 d RDS(on) () Max. ID (A) 0.0033 at VGS = 10 V 90 0.0041 at VGS = 4.5 V 90 Qg (Typ.) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SUM90N04-3m3P 2002/95/EC O-263 SUM90N04-3m3P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SUM90N04-3m3P

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836