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    SGS Thomson STD9N10T4

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    Bristol Electronics STD9N10T4 2,246 6
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    Quest Components STD9N10T4 1,796
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    STMicroelectronics STD9N10T4

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    Quest Components STD9N10T4 1,027
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    ComSIT USA STD9N10T4 5,300
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    SGS Semiconductor Ltd STD9N10

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    ComSIT USA STD9N10 1,165
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    STD9N10 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STD9N10 STMicroelectronics N-CHANNEL 100V - 0.23 & - 9A DPAK/IPAK MOSFET TRANSISTOR Original PDF
    STD9N10 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD9N10 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD9N10 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STD9N10-1 STMicroelectronics N-CHANNEL 100V - 0.23 & - 9A DPAK/IPAK MOSFET TRANSISTOR Original PDF
    STD9N10-1 STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    STD9N10L STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD9N10L STMicroelectronics N - CHANNEL 100V - 0.22W - 9A - IPAK/DPAK POWER MOS TRANSISTOR Original PDF
    STD9N10L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STD9N10L-1 STMicroelectronics N-Channel 100 V - 0.22 ohm - 9 A IPAK Power MOS Transistor Original PDF
    STD9N10LT4 STMicroelectronics N-Channel 100 V - 0.22 ohm - 9 A DPAK Power MOS Transistor Original PDF
    STD9N10T4 STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    STD9N10T4 STMicroelectronics N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR Original PDF

    STD9N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D9N10

    Abstract: STD9N10 STD9N10-1 STD9N10T4 DPak Package dimensions
    Text: STD9N10 STD9N10-1 N-CHANNEL 100V - 0.23 Ω - 9A DPAK/IPAK POWER MOS TRANSISTOR Table 1. General Features Figure 1. Package Type VDSS RDS on ID STD9N10 100 V < 0.27 Ω 9A STD9N10-1 100 V < 0.27 Ω 9A FEATURES SUMMARY • TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STD9N10 STD9N10-1 O-251) O-252) O-251 O-252 D9N10 STD9N10 STD9N10-1 STD9N10T4 DPak Package dimensions

    Untitled

    Abstract: No abstract text available
    Text: STD9N10L N - CHANNEL 100V - 0.22Ω - 9A - IPAK/DPAK POWER MOS TRANSISTOR TYPE STD20N03L • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 30 V < 0.02 Ω 20 A (*) TYPICAL RDS(on) = 0.22 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STD9N10L STD20N03L 100oC 175oC O-252) O-251 O-252

    Untitled

    Abstract: No abstract text available
    Text: STD9N10L N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD9N10L 100 V < 0.27 Ω 9A • ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.22 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STD9N10L 100oC 175oC O-252) O-251 O-252

    STD9N10

    Abstract: No abstract text available
    Text: STD9N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE ST D9N10 • ■ ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.27 Ω 9 A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STD9N10 D9N10 100oC 175oC O-251) O-252) O-251 STD9N10

    STD9N10L

    Abstract: No abstract text available
    Text: STD9N10L N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK POWER MOS TRANSISTOR TYPE STD9N10L • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.27 Ω 9 A TYPICAL RDS(on) = 0.22 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STD9N10L 100oC 175oC O-252) O-251 O-252 STD9N10L

    STD9N10

    Abstract: No abstract text available
    Text: STD9N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD9N10 • ■ ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.27 Ω 9A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STD9N10 100oC 175oC O-251) O-252) O-251 STD9N10

    STD9N10L

    Abstract: No abstract text available
    Text: STD9N10L N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD9N10L 100 V < 0.27 Ω 9A • ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.22 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STD9N10L 100oC 175oC O-252) O-251 O-252 STD9N10L

    STD9N10L

    Abstract: No abstract text available
    Text: STD9N10L N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD9N10L 100 V < 0.27 Ω 9A TYPICAL RDS(on) = 0.22 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY


    Original     		PDF STD9N10L 100oC 175oC O-252) O-251 O-252 STD9N10L

    D9N10

    Abstract: STD9N10 STD9N10-1 STD9N10T4 T432 airbag
    Text: STD9N10 STD9N10-1 N-CHANNEL 100V - 0.23 Ω - 9A DPAK/IPAK POWER MOS TRANSISTOR Table 1. General Features Figure 1. Package Type VDSS RDS on ID STD9N10 100 V < 0.27 Ω 9A STD9N10-1 100 V < 0.27 Ω 9A FEATURES SUMMARY • TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STD9N10 STD9N10-1 O-251) O-252) O-251 D9N10 STD9N10 STD9N10-1 STD9N10T4 T432 airbag

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    mps2112

    Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular


    Original     		PDF SG388/D May-2002 r14525 SG388 mps2112 UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp

    STE30NA50-DK

    Abstract: ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220
    Text: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 ISOWATT 220TM Fully isolated TO-220 MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000


    Original     		PDF OT-82 OT-223 O-220 220TM MAX220TM 218TM O-247 MAX247TM Max247 Max220 STE30NA50-DK ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    irf840 power supply

    Abstract: STP3020L STP38NF06L STP6NB90FP STe30na50 STP4NB90 STN1NB80 IRF740 sT55n STD1NB60
    Text: April 2000 TO-220 VDSS RDS on max (V) (Ω) -60 30 34 50 55 60 75 80 100 150 200 250 300 Type ID(cont) DEVICES REPLACED (A) REMARKS 0.2 0.004 0.006 0.0065 0.009 0.01 0.01 STP12PF06 STP80NF03L-04 STP80NE03L-06 STP90NF03L STP70NF3LL STP70NF03L STP60NF03L 12


    Original     		PDF O-220 STP12PF06 STP80NF03L-04 STP80NE03L-06 STP90NF03L STP70NF3LL STP70NF03L STP60NF03L STP60NE03L-12 STP50NF03L irf840 power supply STP3020L STP38NF06L STP6NB90FP STe30na50 STP4NB90 STN1NB80 IRF740 sT55n STD1NB60

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50

    NTD18N06

    Abstract: BSS84L BSS138L mtd3055et4 transistor equivalent mtp2955v ngb15n41 DL135 sot 223 marking code AH amplifier, sot-89, H1 MGSF1N02L
    Text: SGD507/D Rev. 0, Feb-2002 MOS Power Products Selector Guide ON Semiconductor ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does


    Original     		PDF SGD507/D Feb-2002 r14525 NTD18N06 BSS84L BSS138L mtd3055et4 transistor equivalent mtp2955v ngb15n41 DL135 sot 223 marking code AH amplifier, sot-89, H1 MGSF1N02L

    Untitled

    Abstract: No abstract text available
    Text: SGSTHOMSON STD 9N 1o ULieraOôKêi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD9N10 V dss RDS on Id 100 V < 0.27 a 9A • . . . . . . ■ TYPICAL FtDS(on) = 0.23 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCH E TESTE D REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF STD9N10 O-251) O-252) O-251 O-252 0068772-B

    Untitled

    Abstract: No abstract text available
    Text: STD9N10L N - CHANNEL 100V - 0.22Q - 9A - IPAK/DPAK POWER MOS TRANSISTOR TYPE V STD 20N 03L d s s 30 V R d Id S o ii < 0.02 Q. 20 A (*) . . . . . . . . TYPICAL RDs(on) = 0.22 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF STD9N10L O-252) O-251 O-252 0068772-B

    Untitled

    Abstract: No abstract text available
    Text: * 7# TYPE S TD 9N 10 SGS-THOMSON [MOeiMillLieraeiDIgS S T D 9 N 10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 100 V < 0 .2 7 Q. 9 A TYPICAL RDS(on) = 0.23 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF O-251) O-252)