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    HUF75307D3S Price and Stock

    onsemi HUF75307D3ST

    MOSFET N-CH 55V 15A TO252AA
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    DigiKey HUF75307D3ST Reel
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    Rochester Electronics LLC HUF75307D3ST

    MOSFET N-CH 55V 15A TO252AA
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    DigiKey HUF75307D3ST Bulk 740
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    Rochester Electronics LLC HUF75307D3ST_NL

    N-CHANNEL POWER MOSFET
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    DigiKey HUF75307D3ST_NL Bulk 919
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    Fairchild Semiconductor Corporation HUF75307D3ST

    TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,15A I(D),TO-252AA
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    Quest Components HUF75307D3ST 1,967
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    HUF75307D3ST 928
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    HUF75307D3ST 921
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    Rochester Electronics HUF75307D3ST 110,110 1
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    ComSIT USA HUF75307D3ST 2,400
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    Win Source Electronics HUF75307D3ST 2,500
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    Intersil Corporation HUF75307D3ST

    TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,15A I(D),TO-252AA
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    Quest Components HUF75307D3ST 662
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    Find more HUF75307D3S price and stock on Findchips.com

    HUF75307D3S Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF75307D3S Fairchild Semiconductor 15A, 55V, 0.090 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75307D3S Fairchild Semiconductor 15A, 55V, 0.090 ?, N-Channel UltraFET Power MOSF Original PDF
    HUF75307D3S Fairchild Semiconductor 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75307D3S Harris Semiconductor 13A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75307D3S Intersil 15A, 55V, 0.090 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75307D3ST Fairchild Semiconductor 15A, 55V, 0.090 Ohm N-Channel UltraFET Power MOSFETs Original PDF
    HUF75307D3ST Fairchild Semiconductor 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75307D3ST Intersil MOSFET, Enhancement, N Channel, 55V, TO-252, 3-Pin Original PDF
    HUF75307D3S/T Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75307D3ST_NL Fairchild Semiconductor 15A, 55V, 0.090 Ohm N-Channel UltraFET Power MOSFETs Original PDF

    HUF75307D3S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    75307

    Abstract: 75307d transistor 75307D HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75307P3, HUF75307D3, HUF75307D3S 75307 75307d transistor 75307D HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334

    75307D

    Abstract: AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334 75307P KP-03
    Text: HUF75307P3, HUF75307D3, HUF75307D3S S E M I C O N D U C T O R 13A, 55V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs April 1998 Features Description • 13A, 55V • Ultra Low On-Resistance, rDS ON = 0.090Ω • Diode Exhibits Both High Speed and Soft Recovery


    Original     		PDF HUF75307P3, HUF75307D3, HUF75307D3S TB334, 1-800-4-HARRIS 75307D AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334 75307P KP-03

    75307D

    Abstract: 75307 transistor 75307D TA75307 AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TB334
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75307P3, HUF75307D3, HUF75307D3S 43cts 75307D 75307 transistor 75307D TA75307 AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TB334

    irf540n irf640

    Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
    Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S


    Original     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 irf540n irf640 IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    75307D

    Abstract: HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334 TC114E
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75307P3, HUF75307D3, HUF75307D3S 75307D HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334 TC114E

    75307

    Abstract: 75307d transistor 75307D AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 75307*p
    Text: HUF75307P3, HUF75307D3, HUF75307D3S S E M I C O N D U C T O R 13A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 13A, 55V The HUF75307 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


    Original     		PDF HUF75307P3, HUF75307D3, HUF75307D3S HUF75307 1-800-4-HARRIS 75307 75307d transistor 75307D AN9321 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 75307*p

    75307D

    Abstract: No abstract text available
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75307P3, HUF75307D3, HUF75307D3S 75307D

    75307D

    Abstract: 75307 HUF75307D3 HUF75307D3S HUF75307D3ST HUF75307P3 TA75307 TB334
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75307P3, HUF75307D3, HUF75307D3S HUF75307 HUF75307D3S 75307D 75307 HUF75307D3 HUF75307D3ST HUF75307P3 TA75307 TB334

    complementary of irf830

    Abstract: IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary
    Text: Power MOSFET Selection Trees TM N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 HUF75321S3S HUF75329D3


    Original     		PDF BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 complementary of irf830 IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary

    FP1 C40

    Abstract: C1923 transistor 593D HIP6019B HIP6019BCB Transistor C1923
    Text: HIP6019B Data Sheet Advanced Dual PWM and Dual Linear Power Control The HIP6019B provides the power control and protection for four output voltages in high-performance microprocessor and computer applications. The IC integrates two PWM controllers, a linear regulator and a linear controller as well as


    Original     		PDF HIP6019B HIP6019B FP1 C40 C1923 transistor 593D HIP6019BCB Transistor C1923

    Transistor C1923 pin configuration

    Abstract: C1923 transistor 593D HIP6019 HIP6019CB HIP6019EVAL1
    Text: HIP6019 TM Data Sheet April 1998 Advanced Dual PWM and Dual Linear Power Control Features The HIP6019 provides the power control and protection for four output voltages in high-performance microprocessor and computer applications. The IC integrates two PWM controllers,


    Original     		PDF HIP6019 HIP6019 Transistor C1923 pin configuration C1923 transistor 593D HIP6019CB HIP6019EVAL1

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    a106 capacitor

    Abstract: 4490 mosfet B45 SO8 ATX MOTHERBOARD CIRCUIT diagram HIP6017 HIP6017EVAL1 HIP6019 HIP6019EVAL1 T60-52 mosfet T60
    Text: Total Power Conversion Solutions for Computer Motherboards Using HIP6017, HIP6019 Controller ICs Application Note April 1998 AN9800.1 Author: Bogdan M. Duduman Introduction The evaluation board features a 5-bit DAC-controlled synchronous buck converter targeted at the microprocessor


    Original     		PDF HIP6017, HIP6019 AN9800 HIP6019EVAL1 HIP6017 a106 capacitor 4490 mosfet B45 SO8 ATX MOTHERBOARD CIRCUIT diagram HIP6017EVAL1 T60-52 mosfet T60

    IRFZ44N complementary

    Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
    Text: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55


    Original     		PDF BUK7508-55 BUK7514-55A BUK7524-55A BUK7530-55A BUK7570-55A BUZ100S BUZ102S BUZ110S BUZ111S IRF1010N IRFZ44N complementary IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 HRF3205 harris 4365

    Untitled

    Abstract: No abstract text available
    Text: HIP6017 S E M I C O N D U C T O R Advanced PWM and Dual Linear Power Control April 1998 Features Description • Provides 3 Regulated Voltages - Microprocessor Core, Clock and GTL Power The HIP6017 provides the power control and protection for three output voltages in high-performance microprocessor


    Original     		PDF HIP6017 HIP6017 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Semiconductor Data Sheet June 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75307P3, HUF75307D3, HUF75307D3S HUF75307

    75307D

    Abstract: No abstract text available
    Text: HUF75307P3, HUF75307D3, HUF75307D3S Semiconductor Data Sheet March 1999 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75307P3, HUF75307D3, HUF75307D3S HUF75307 75307D

    75307D

    Abstract: 75307P TA75307 HUF75307D3
    Text: HUF75307P3, HUF75307D3, HUF75307D3S in t e r s il J u n e !99 9 D a ta S h e e t 15A, 55V, 0.090 Ohm, N-ChanneI UitraFET Power MOSFETs Th ese N-Channel power M O SFETs are manufactured using the File N u m b e r 4 3 5 3 .6 Features • 15A, 55V • Simulation Models


    OCR Scan     		PDF HUF75307P3, HUF75307D3, HUF75307D3S HUF75307D3S AN7254 AN7260. 75307D 75307P TA75307 HUF75307D3

    75307

    Abstract: kp-03 lambda LAS 14 AU 75307*p lambda* lis
    Text: HUF75307P3, HUF75307D3, HUF75307D3S HARRIS S E M I C O N D U C T O R 13A, 55V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs January 1998 MM Features • 13A, 55V • Ultra Low On-Resistance, ro s O N = 0 .0 9 0 i2 • Diode Exhibits Both High Speed and Soft Recovery


    OCR Scan     		PDF HUF75307P3, HUF75307D3, HUF75307D3S TB334, 1-800-4-HARRIS 75307 kp-03 lambda LAS 14 AU 75307*p lambda* lis

    75307D

    Abstract: TA75307
    Text: HUF75307P3, HUF75307D3, HUF75307D3S in te fs il D a ta S h e e t J u n e 19 99 15A, 55V, 0.090 Ohm, N -Channel UltraFET Power MOSFETs Ultras These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    OCR Scan     		PDF HUF75307P3, HUF75307D3, HUF75307D3S HUF7S307P3, AN7254 AN7260. 75307D TA75307

    Untitled

    Abstract: No abstract text available
    Text: HIP6017 Semiconductor Advanced PWM and Dual Linear Power Control April 1998 Features Description • Provides 3 Regulated Voltages T he H IP 60 17 provides the po w e r con tro l and protection for th re e o u tp u t volta ge s in high -perform a nce m icro proce ssor


    OCR Scan     		PDF HIP6017 HIP6017

    TL 2272 RB

    Abstract: integrated circuit TL 2272 Transistor C1923 pin configuration 3 phase pwm signal generator ic
    Text: i n HIP6019B t e f s i l D a ta S h e e t Advanced Dual PWM and Dual Linear Power Control The HIP6019B provides the power control and protection for four output voltages in high-performance microprocessor and computer applications. The IC integrates two PWM


    OCR Scan     		PDF HIP6019B HIP6019B HUF76137S3S MBR2535CTL C19-23 5x1000mF HUF76139S3S C24-36 7x1000 HUF75307D3S TL 2272 RB integrated circuit TL 2272 Transistor C1923 pin configuration 3 phase pwm signal generator ic