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Vishay Siliconix IRF520PBF-BE3 MOSFET N-CH 100V 9.2A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF520PBF-BE3	Tube	3,399		1	1 $1.71 10 $1.71 100 $1.71 1000 $0.52451 10000 $0.42363	Buy Now
Infineon Technologies AG IRF520NPBF MOSFET N-CH 100V 9.7A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF520NPBF	Tube	2,357		1	1 $1.43 10 $1.43 100 $1.43 1000 $0.42899 10000 $0.34488	Buy Now
Avnet Americas	IRF520NPBF	Tube	1,216	8 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
	IRF520NPBF	Bulk		16 Weeks, 3 Days	1	1 $1.06 10 $1.06 100 $0.509 1000 $0.295 10000 $0.295	Buy Now
Mouser Electronics	IRF520NPBF		11,988			1 $0.66 10 $0.607 100 $0.471 1000 $0.351 10000 $0.344	Buy Now
Verical	IRF520NPBF		28,244		110	1 - 10 - 100 - 1000 $0.2863 10000 $0.2863	Buy Now
	IRF520NPBF		20,088		25	1 - 10 - 100 $0.3669 1000 $0.2872 10000 $0.274	Buy Now
	IRF520NPBF		10,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.3702	Buy Now
	IRF520NPBF		1,000		1,000	1 - 10 - 100 - 1000 $0.3219 10000 $0.2755	Buy Now
Arrow Electronics	IRF520NPBF		20,088	8 Weeks	1	1 $0.695 10 $0.6392 100 $0.496 1000 $0.3696 10000 $0.3622	Buy Now
	IRF520NPBF		1,997	8 Weeks	1,000	1 - 10 - 100 - 1000 $0.3503 10000 $0.3433	Buy Now

Newark	IRF520NPBF	Bulk	86,553		1	1 $1.06 10 $1.06 100 $0.509 1000 $0.295 10000 $0.261	Buy Now
Rochester Electronics	IRF520NPBF				1	1 $0.3832 10 $0.3832 100 $0.3602 1000 $0.3257 10000 $0.3257	Buy Now
TME	IRF520NPBF		87		1	1 $0.733 10 $0.385 100 $0.331 1000 $0.286 10000 $0.286	Buy Now
Chip 1 Exchange	IRF520NPBF		11,898			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip1Stop	IRF520NPBF	Tube	28,444			1 - 10 $0.265 100 $0.227 1000 $0.208 10000 $0.208	Buy Now
EBV Elektronik	IRF520NPBF		6,000	9 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IRF520NPBF		5,000		1	1 - 10 - 100 - 1000 $0.3774 10000 $0.3493	Buy Now
Win Source Electronics	IRF520NPBF		7,320			1 - 10 - 100 - 1000 $0.3258 10000 $0.3258	Buy Now
Vishay Siliconix IRF520PBF MOSFET N-CH 100V 9.2A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF520PBF	Tube	2,066		1	1 $1.71 10 $1.71 100 $1.71 1000 $0.52451 10000 $0.42363	Buy Now
Vishay Siliconix IRF520SPBF MOSFET N-CH 100V 9.2A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF520SPBF	Tube	1,617		1	1 $1.9 10 $1.9 100 $1.9 1000 $0.59224 10000 $0.49	Buy Now
Bristol Electronics	IRF520SPBF		1,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix IRF520 MOSFET N-CH 100V 9.2A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRF520	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	IRF520		150			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IRF520		120			1 $1 10 $1 100 $0.6 1000 $0.5 10000 $0.5	Buy Now

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IRF520 Datasheets (108)

Part	Manufacturer	Description	Datasheet Type	PDF
IRF520	Fairchild Semiconductor	9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET	Original	PDF
IRF520	Harris Semiconductor	Power MOSFET Selection Guide	Original	PDF
IRF520	Intersil	9.2A, 100V, 0.270 ?, N-Channel Power MOSFET	Original	PDF
IRF520	STMicroelectronics	N-Channel 100 V - 0.115 ohm - 10 A TO-220 Low Gate Charge STripFETII Power MOSFET	Original	PDF
IRF520	STMicroelectronics	N-Channel ENHANCEMENT MODE POWER MOS TRANSISTORS	Original	PDF
IRF520	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRF520	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 9.2A TO-220AB	Original	PDF
IRF520	Fairchild Semiconductor	N-Channel Power MOSFETs, 11 A, 60-100 V	Scan	PDF
IRF520	FCI	POWER MOSFETs	Scan	PDF
IRF520	Frederick Components	Power MOSFET Selection Guide	Scan	PDF
IRF520	General Electric	Power Transistor Data Book 1985	Scan	PDF
IRF520	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRF520	International Rectifier	HEXFET Power Mosfet	Scan	PDF
IRF520	International Rectifier	N-Channel Power MOSFETs	Scan	PDF

IRF520	International Rectifier	TO-220 N-Channel HEXFET Power MOSFET	Scan	PDF
IRF520	Intersil	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, 100V, 9.2A, Pkg Style TO-220AB	Scan	PDF
IRF520	Motorola	Switchmode Datasheet	Scan	PDF
IRF520	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRF520	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
IRF520	Unknown	FET Data Book	Scan	PDF

IRF520 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Power MOSFETs Application Notes irf520 Abstract: No abstract text available Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	PDF	IRF520, SiHF520 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Power MOSFETs Application Notes irf520
Untitled Abstract: No abstract text available Text: IRF520S, SiHF520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • 175 °C Operating Temperature	Original	PDF	IRF520S, SiHF520S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRF520N Abstract: specifications Irf520N Text: PD - 91339A IRF520N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier	Original	PDF	1339A IRF520N O-220 IRF520N specifications Irf520N
irf520 mosfet Abstract: SiHF520 IRF520 Power MOSFETs Application Notes irf520 SiHF520-E3 1IRF520 Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	PDF	IRF520, SiHF520 O-220 O-220 18-Jul-08 irf520 mosfet IRF520 Power MOSFETs Application Notes irf520 SiHF520-E3 1IRF520
IRF520N Abstract: AN-994 IRF520NL IRF520NS Text: PD -91340A IRF520NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF520NS Low-profile through-hole (IRF520NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS(on) = 0.20Ω G ID = 9.7A S	Original	PDF	-91340A IRF520NS/L IRF520NS) IRF520NL) IRF520N AN-994 IRF520NL IRF520NS
IRF520NPBF Abstract: IRF1010 4.5v to 100v input regulator Text: PD - 94818 IRF520NPbF Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier	Original	PDF	IRF520NPbF O-220 O-220AB. O-220AB IRF1010 IRF520NPBF IRF1010 4.5v to 100v input regulator
Untitled Abstract: No abstract text available Text: PD- 95749 IRF520NSPbF IRF520NLPbF Lead-Free www.irf.com 1 8/23/04 IRF520NS/LPbF 2 www.irf.com IRF520NS/LPbF www.irf.com 3 IRF520NS/LPbF 4 www.irf.com IRF520NS/LPbF www.irf.com 5 IRF520NS/LPbF 6 www.irf.com IRF520NS/LPbF www.irf.com 7 IRF520NS/LPbF D2Pak Package Outline	Original	PDF	IRF520NSPbF IRF520NLPbF IRF520NS/LPbF EIA-418.
irf1010e equivalent Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent Text: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N	Original	PDF	O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
Untitled Abstract: No abstract text available Text: IRF520FI Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)7 I(DM) Max. (A) Pulsed I(D)5 @Temp (øC)100# IDM Max (@25øC Amb)40 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)35 Minimum Operating Temp (øC)	Original	PDF	IRF520FI
IRF520N Abstract: specifications Irf520N 7A, 100v fast recovery diode Text: PD - 91339A IRF520N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier	Original	PDF	1339A IRF520N O-220 IRF520N specifications Irf520N 7A, 100v fast recovery diode
Untitled Abstract: No abstract text available Text: PD- 95749 IRF520NSPbF IRF520NLPbF Lead-Free www.irf.com 1 8/23/04 IRF520NS/LPbF 2 www.irf.com IRF520NS/LPbF www.irf.com 3 IRF520NS/LPbF 4 www.irf.com IRF520NS/LPbF www.irf.com 5 IRF520NS/LPbF 6 www.irf.com IRF520NS/LPbF www.irf.com 7 IRF520NS/LPbF D2Pak Package Outline	Original	PDF	IRF520NSPbF IRF520NLPbF IRF520NS/LPbF RNAT957)
IRF520 application note Abstract: IRF520 IRF520P 910170 Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature	Original	PDF	IRF520, SiHF520 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF520 application note IRF520 IRF520P 910170
AN-994 Abstract: IRF520V IRF520VL IRF520VS IRF530S Text: PD - 94306 IRF520VS IRF520VL HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 100V RDS on = 0.165Ω	Original	PDF	IRF520VS IRF520VL EIA-418. AN-994 IRF520V IRF520VL IRF520VS IRF530S
Untitled Abstract: No abstract text available Text: IRF520NS/L l l l l l l Advanced Process Technology Surface Mount IRF520NS Low-profile through-hole (IRF520NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated TO-263 TO-262 Description The D2Pak is a surface mount power package capable of accommodating die	Original	PDF	IRF520NS/L IRF520NS) IRF520NL) O-263 O-262

IRF50 Abstract: irf521 irf520 pin configuration IRF521 irf522 irf523 Text: ZETE X S E M I C O N D U C T O R S =ISI> D • ^70570 0 0 0 5 5 4 7 0 ■ ZETB 95D 0 5 5 4 7 N-channel enhancement mode vertical DMOS FET IRF520 IRF521 IRF522 IRF523 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability	OCR Scan	PDF	IRF520 IRF521 IRF522 IRF523 IRF620 IRF523 O-220 IRF50 pin configuration IRF521
TO-22OAB Abstract: SD57a irf520n to22oab Text: PD-91339A International l ö R Rectifier IRF520N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100 V R D S o n = 0 . 2 0 Î 2 lD = 9.7A	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: International iMiRectifier P D - 9 .1 3 3 9 IRF520N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 1 0 0 V ^ D S o n = Id =	OCR Scan	PDF	IRF520N 5S452 D023411
Untitled Abstract: No abstract text available Text: International i ^ Reclifier PD91340 IRF520NS preliminary HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D escriptio n Fifth Generation HEXFETs from International Rectifier	OCR Scan	PDF	IRF520NS
Untitled Abstract: No abstract text available Text: IRF520A Advanced Power MOSFET FEATURES BVDSS - 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ^DS on = 0.2Í2 lD = 9-2 A ■ 175°C Operating Temperature	OCR Scan	PDF	IRF520A QQ3b32fl 3b32ti O-220 7Tb4142 DD3b33D
IRF520 Abstract: irf521 IRF523 F522 Text: N-CHANNEL POWER MOSFETS IRF520/521/522/523 FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	PDF	IRF520/521/522/523 IRF520 IRF521 IRF522 IRF523 IRF520/5217522/523 F522
irf521 Abstract: No abstract text available Text: N-CHANNEL POWER MOSFETS IRF520/521 FEATURES • • • • • • • Lower R dsion Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	PDF	IRF520/521 IRF520 IRF521 002fl7SD irf521
jrf 520 Abstract: irf 44 n schematic diagram UPS 600 Power structure IRF520 irf5205 IRF521 IRF520 application note IRF 520 TRANSISTOR n 522 IRF522 Text: 3QE P /S T J • 7cjScjg37 QQSTTb? 3 ■ S G S -T H O M S O N ^ D œ iŒ ig T O iO ig i 6^ S-THOMSON TYPE N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V Dss ^D S on IRF520 IRF520FI IRF521 IRF521FI 100 100 80 80 0.27 Q 0.27 n Id ' 9.2 A 7 A IRF522 IRF522FI	OCR Scan	PDF	520/FI-521 522/FI-523/FI IRF520 IRF520FI IRF521 IRF521FI IRF522 IRF522FI 1RF523 IRF523FI jrf 520 irf 44 n schematic diagram UPS 600 Power structure irf5205 IRF520 application note IRF 520 TRANSISTOR n 522
transistor IRF520 Abstract: IRF520 mos die 312c IRF52 Text: 3QE D 7 T 2 C 237 0D30130 5 • Q S-THOMSON SGS-THOMSON IRF520 CHIP Ey N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 9 5 x9 5 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION:	OCR Scan	PDF	0D30130 IRF520 95x95 28x30 16x18 651CHARACTERISTICS transistor IRF520 mos die 312c IRF52
fet ba7 transistor Abstract: k106 transistor transistor 9651 fet ba7 IRF520 IRF521 k 106 40411 transistor D84CK2 transistor 40411 Text: IRF520,521 D84CL2.K2 ßOTlRi°IMäg IFHT FIELD EFFECT POWER TRANSISTOR 8 AMPERES 1100, 60 VOLTS RlDS ON = 0.3 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged	OCR Scan	PDF	IRF520 D84CL2 00A///sec, fet ba7 transistor k106 transistor transistor 9651 fet ba7 IRF521 k 106 40411 transistor D84CK2 transistor 40411

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Vishay Siliconix IRF520PBF-BE3

Infineon Technologies AG IRF520NPBF

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Vishay Siliconix IRF520

IRF520 Datasheets (108)

IRF520 Datasheets Context Search

Power MOSFETs Application Notes irf520

Untitled

IRF520N

irf520 mosfet

IRF520N

IRF520NPBF

Untitled

irf1010e equivalent

Untitled

IRF520N

Untitled

IRF520 application note

AN-994

Untitled

IRF50

TO-22OAB

Untitled

Untitled

Untitled

IRF520

irf521

jrf 520

transistor IRF520

fet ba7 transistor