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    STD8N06 Search Results

    STD8N06 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STD8N06 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD8N06 STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STD8N06-1 STMicroelectronics FET Transistor, N-Channel Enhancement Mode Power MOS Transistor Original PDF
    STD8N06-1 STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF
    STD8N06T4 STMicroelectronics FET Transistor, N-Channel Enhancement Mode Power MOS Transistor, Tape and Reel Original PDF
    STD8N06T4 STMicroelectronics N-Channel Enhancement Mode Power MOS Transistor Original PDF

    STD8N06 Datasheets Context Search

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    STD8N06

    Abstract: No abstract text available
    Text: STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD8N06 • ■ ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V < 0.25 Ω 8A TYPICAL RDS(on) = 0.21 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


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    PDF STD8N06 100oC 175oC O-251) O-252) STD8N06

    STD8N06

    Abstract: No abstract text available
    Text: STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD8N06 • ■ ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.25 Ω 8A TYPICAL RDS(on) = 0.21 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


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    PDF STD8N06 100oC 175oC O-251) O-252) STD8N06

    STD8N06

    Abstract: No abstract text available
    Text: STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD8N06 • ■ ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.25 Ω 8A TYPICAL RDS(on) = 0.21 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


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    PDF STD8N06 100oC 175oC O-251) O-252) O-251 STD8N06

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


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    STE30NA50-DK

    Abstract: ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220
    Text: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 ISOWATT 220TM Fully isolated TO-220 MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000


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    PDF OT-82 OT-223 O-220 220TM MAX220TM 218TM O-247 MAX247TM Max247 Max220 STE30NA50-DK ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


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    PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    ste30na50

    Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
    Text: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0


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    PDF OT-223 STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN2N10 STN2NE10L STN1N20 STN1NB80 ste30na50 STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


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    PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    scr power control schematic

    Abstract: EL 4N25 4n25 application note AN26-1 BYT11-1000 IGBT DRIVER application note AN-556 TN197 BYT11-1000 equivalent IGBT DRIVER SCHEMATIC chip
    Text: AN556 APPLICATION NOTE THE L6353: A SMART GATE DRIVER by: C. Adragna and G. Comandatore The superior performance of voltage controlled switch makes this device the preferred one in modern power electronics applications. The L6353 is a new monolithic integrated circuit designed to realise a versatile and smart interface


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    PDF AN556 L6353: L6353 scr power control schematic EL 4N25 4n25 application note AN26-1 BYT11-1000 IGBT DRIVER application note AN-556 TN197 BYT11-1000 equivalent IGBT DRIVER SCHEMATIC chip

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


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    PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    AN-556

    Abstract: AN556 application note 100uf25v scr power control schematic TN197 L6353 BRIDGE-RECTIFIER 8a IGBT DRIVER SCHEMATIC chip SCR Inverter datasheet 4N25
    Text: AN556 APPLICATION NOTE THE L6353: A SMART GATE DRIVER by: C. Adragna and G. Comandatore The superior performance of voltage controlled switch makes this device the preferred one in modern power electronics applications. The L6353 is a new monolithic integrated circuit designed to realise a versatile and smart interface


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    PDF AN556 L6353: L6353 AN-556 AN556 application note 100uf25v scr power control schematic TN197 BRIDGE-RECTIFIER 8a IGBT DRIVER SCHEMATIC chip SCR Inverter datasheet 4N25

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


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    PDF BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50

    STP3N60FI

    Abstract: IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90
    Text: May ‘99 TO-220 VDSS RDS on max (V) (Ω) 30 0.004 0.006 0.01 0.012 0.0155 0.02 0.022 0.022 0.045 0.05 0.008 0.015 0.028 0.04 0.055 0.07 0.1 0.006 0.006 0.01 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L STP3020L


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    PDF O-220 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP3N60FI IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90

    AN-556

    Abstract: 4N25 AN556 BYT11-1000 BZX85C20 L6353 STW20NA50
    Text: AN556 APPLICATION NOTE THE L6353: A SMART GATE DRIVER by: C. Adragna and G. Comandatore The superior performance of voltage controlled switch makes this device the preferred one in modern power electronics applications. The L6353 is a new monolithic integrated circuit designed to realise a versatile and smart interface


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    PDF AN556 L6353: L6353 AN-556 4N25 AN556 BYT11-1000 BZX85C20 STW20NA50

    ste30na50-DK

    Abstract: ste30na50 ste38na50 STP15N25 STE30NA50-DA STW26N25 STY16NA90 stp20n10l BUZ10 STW75N06
    Text: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 2 1 ISOWATT 220TM Fully isolated TO-220 MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000


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    PDF OT-82 OT-223 220TM O-220 MAX220TM 218TM O-247 MAX247TM Max247 Max220 ste30na50-DK ste30na50 ste38na50 STP15N25 STE30NA50-DA STW26N25 STY16NA90 stp20n10l BUZ10 STW75N06

    Untitled

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON TYPE STD8N06 STD8N06 m N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS on Id 60 V < 0.25 a 8 A . TYPICAL R DS(on) = 0.21 Cl • AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C • LOW GATE CHARGE


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    PDF STD8N06 O-251) O-252) O-251 O-252

    Untitled

    Abstract: No abstract text available
    Text: S G S - T H O M S O N ¿ 5 ¡U È T O « 7 S T D 8 N 06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V STD 8N 06 dss 60 V R DS on Id < 0.2 5 C l 8 A . . • . . . ■ . TYPICAL R DS(on) = 0.21 Q. AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


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    PDF O-251) O-252) O-251 O-252 STD8N06 0068772-B