M68Z128
Abstract: M68Z128W TSOP32 3VE1
Text: M68Z128W 3V, 1 Mbit 128 Kbit x 8 Low Power SRAM with Output Enable FEATURES SUMMARY • ULTRA LOW DATA RETENTION CURRENT Figure 1. Package – 10nA (typical) – 2.0µA (max) ■ OPERATION VOLTAGE: 3.0V (+0.6 / –0.3V) ■ 128 Kbit x 8 SRAM WITH OUTPUT ENABLE
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M68Z128W
TSOP32
M68Z128
M68Z128W
TSOP32
3VE1
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M68Z128
Abstract: TSOP32
Text: M68Z128 5V, 1 Mbit 128 Kbit x 8 Low Power SRAM with Output Enable FEATURES SUMMARY • ULTRA LOW DATA RETENTION CURRENT Figure 1. Package – 10nA (typical) – 2.0µA (max) ■ OPERATION VOLTAGE: 5.0V ± 10% ■ 128 Kbit x 8 VERY FAST SRAM WITH OUTPUT ENABLE
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M68Z128
TSOP32
M68Z128
TSOP32
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Untitled
Abstract: No abstract text available
Text: THIS SPEC IS OBSOLETE Spec No: 001-00208 Spec Title: CY7C1324H 2-MBIT 128K X 18 FLOW-THROUGH SYNC SRAM Sunset Owner: Jayasree Nayar (njy) Replaced by: NONE CY7C1324H 2-Mbit (128 K x 18) Flow-Through Sync SRAM 2-Mbit (128 K × 18) flow-through Sync SRAM
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CY7C1324H
CY7C1324H
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M48Z129V
Abstract: M48Z129Y
Text: M48Z129Y* M48Z129V 5.0V OR 3.3V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE
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M48Z129Y*
M48Z129V
32-pin
PMDIP32
M48Z129Y:
M48Z129V:
M48Z129V
M48Z129Y
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M48Z129V
Abstract: M48Z129Y
Text: M48Z129Y* M48Z129V 5.0V OR 3.3V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE
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M48Z129Y*
M48Z129V
32-pin
PMDIP32
M48Z129Y:
M48Z129V:
M48Z129V
M48Z129Y
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M48Z129V
Abstract: M48Z129Y
Text: M48Z129Y M48Z129V 5.0V OR 3.3V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE
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M48Z129Y
M48Z129V
32-pin
PMDIP32
M48Z129Y:
M48Z129V:
M48Z129V
M48Z129Y
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M48Z128
Abstract: M48Z128V M48Z128Y SOH28 TSOP32
Text: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE
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M48Z128
M48Z128Y,
M48Z128V*
32-pin
M48Z128:
M48Z128Y:
M48Z128V:
M48Z128
M48Z128V
M48Z128Y
SOH28
TSOP32
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SOH28
Abstract: TSOP32 M48Z128 M48Z128V M48Z128Y
Text: M48Z128 M48Z128Y, M48Z128V 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE
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M48Z128
M48Z128Y,
M48Z128V
M48Z128:
M48Z128Y:
M48Z128V:
28-PIN
32LEAD
SOH28
TSOP32
M48Z128
M48Z128V
M48Z128Y
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Untitled
Abstract: No abstract text available
Text: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE
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M48Z128
M48Z128Y,
M48Z128V*
32-pin
M48Z128:
M48Z128Y:
M48Z128V:
28-PIN
32-LEAD
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M40Z300
Abstract: M48Z128 M48Z128V M48Z128Y D 4242 CP1621
Text: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES
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M48Z128
M48Z128Y,
M48Z128V*
M48Z128:
M48Z128Y:
M48Z128V:
M40Z300
M48Z128
M48Z128V
M48Z128Y
D 4242
CP1621
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Untitled
Abstract: No abstract text available
Text: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE
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M48Z128
M48Z128Y,
M48Z128V*
M48Z128:
M48Z128Y:
M48Z128V:
28-PIN
32-LEADd
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M48Z128
Abstract: M48Z128V M48Z128Y M40Z300
Text: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE
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M48Z128
M48Z128Y,
M48Z128V*
32-pin
M48Z128:
M48Z128Y:
M48Z128V:
M48Z128
M48Z128V
M48Z128Y
M40Z300
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M40Z300
Abstract: M48Z128 M48Z128V M48Z128Y SOH28
Text: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES
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M48Z128
M48Z128Y,
M48Z128V*
M48Z128:
M48Z128Y:
M48Z128V:
M40Z300
M48Z128
M48Z128V
M48Z128Y
SOH28
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Untitled
Abstract: No abstract text available
Text: M48Z129V 3.3 V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
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M48Z129V
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M48Z128
Abstract: M48Z128V M48Z128Y AN1012
Text: M48Z128 M48Z128Y, M48Z128V 5.0 V or 3.3 V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
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M48Z128
M48Z128Y,
M48Z128V
M48Z128:
M48Z128Y:
M48Z128V:
PMDIP32
M48Z128
M48Z128V
M48Z128Y
AN1012
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5716
Abstract: M48Z129V M48Z129Y
Text: M48Z129Y M48Z129V 5.0 V or 3.3 V, 1 Mbit 128 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
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M48Z129Y
M48Z129V
M48Z129Y:
5716
M48Z129V
M48Z129Y
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E-2-WEI
Abstract: 32-PIN ZL23
Text: M K 48127/128 N ,X -55/70/85 SGSTHOMSON V # IM Û M lL IÛ T r M « ! 1 MEG (1,048,576-BIT) 128 K X 8 CMOS SRAM ADVANCE DATA BYTEWYDE 128K X 8 CMOS SRAM EQUAL CYCLE/ACCESS TIMES, 55,70,85NS PIN CONNECTION MAX 600 mil. Plastic DIP LOW Vcc DATA RETENTION 2 VOLTS
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MK48127/128
576-BIT)
32-PIN
MK48127
A0-A16
E-2-WEI
ZL23
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A6W 4d
Abstract: SRAM 6T MT58LC256K18G1 mt 1898 le
Text: ADVANCE 256K x 18. 128K x 32/36 2.5V I/O, PIPELINED. SCD SYNCBURST SRAM I^ IIC R a N MT 58 LC 256 K 18 G 1 , M T 58 LC 128 K32 G 1, MT 58 LC 128 K36 G 1 SYNCBURST SRAM 3.3V Supply, +2.5V I/O, Pipelined, Burst Counter and Single-Cycle Deselect SYNCBURST SRAM
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Untitled
Abstract: No abstract text available
Text: POSTACI 5 • 'T :¿tL-Z3>rlLf MK48127/128 N,X -55/70/85 SCS-THOMSON •[L tM M tsM O S S G S-TH O M SO N 3QE d 1 MEG ( 1-,048,576-BIT) 128 K X 8 CMOS SRAM ADVANCE DATA ■ BYTEWYDE 128K X 8 CM O S SRAM ■ EQUAL CYCLE/ACCESS TIMES, 55,70,85NS MAX. ■ LOW V cc DATA RETENTION 2 VOLTS
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MK48127/128
576-BIT)
32-PIN
K48127
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Untitled
Abstract: No abstract text available
Text: rz 7 Ä 7# S G S -T H O M S O N iM û îE im iO T M O S MK48127/128 N,X -55/70/85 1 MEG ( 1-,048,576-BIT) 128 K X 8 CMOS SRAM A D V A N C E DATA • BYTEWYDE 128K X 8 CM OS SRAM ■ EQUAL CYCLE/ACCESS TIMES, 55,70,85NS MAX ■ LOW Vcc DATA RETENTION 2 VOLTS
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MK48127/128
576-BIT)
32-PIN
MK48127
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BA22
Abstract: BA23 BA24 BA25 BA26 BA27 BA28 BA29 BA30 MCF5204
Text: SECTION 5 SRAM 5.1 SRAM FEATURES • 512-Byte SRAM, Organized as 128 x 32 Bits • Single-Cycle Access • Physically Located on Processor's High-Speed Local Bus • Byte, Word, Longword Address Capabilities • Memory Mapping Defined by the Customer 5.2 SRAM OPERATION
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512-Byte
0-modulo-512
MCF5204
BA22
BA23
BA24
BA25
BA26
BA27
BA28
BA29
BA30
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24 volt 300 AH
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b7E D • blllSMT 00GTMa3 481 ■ MRN ADVANCE MT5 LC 1008 X 8 SRAM M IC R O N B 128 K SEM ICON DUCTORIN C. SRAM 1 2 8 K x 8 SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I/O pins are 5V tolerant • High speed: 15,17, 20, 25,35 and 45ns
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00GTMa3
32-Pin
24rolled)
MT5LC1008
24 volt 300 AH
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BA30
Abstract: BA22 BA23 BA24 BA25 BA26 BA27 BA28 BA29 MCF5206
Text: SECTION 5 SRAM 5.1 SRAM FEATURES • 512-Byte SRAM, Organized as 128 x 32 Bits • Single-Cycle Access • Physically Located on ColdFire core's High-Speed Local Bus • Byte, Word, Longword Address Capabilities • Memory Mapping Defined by the Customer 5.2 SRAM OPERATION
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512-Byte
0-modulo-512
MCF5206
BA30
BA22
BA23
BA24
BA25
BA26
BA27
BA28
BA29
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Untitled
Abstract: No abstract text available
Text: 5EP -? intol ¡FX780 10 ns FLEXIogic FPGA FAMILY WITH SRAM OPTION Any CFB can be either 24V10 Logic or SRAM Block — Up to 80 Complex Macrocells — 128 x 10 SRAM Configuration — CFB Selectable 3.3V or 5V Outputs — Open-Drain Output Option High Performance FPGA Field
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FX780
24V10
12-Bit
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