Untitled
Abstract: No abstract text available
Text: M68Z128W 3V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable • LOW VOLTAGE: 3.0V (+0.6V / –0.3V) ■ 128Kb x 8 LOW POWER SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ LOW VCC DATA RETENTION: 1.4V ■ TRI-STATE COMMON I/O ■ LOW ACTIVE and STANDBY POWER
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M68Z128W
128Kb
M68Z128W
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PDF
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M68Z128W
Abstract: TSOP32 TSOP32 Package
Text: M68Z128W 3V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable • LOW VOLTAGE: 3.0V (+0.6V / –0.3V) ■ 128Kb x 8 LOW POWER SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ LOW VCC DATA RETENTION: 1.4V ■ TRI-STATE COMMON I/O ■ LOW ACTIVE and STANDBY POWER
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Original
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M68Z128W
128Kb
M68Z128W
TSOP32
TSOP32 Package
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PDF
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M68Z128
Abstract: M68Z128W TSOP32 3VE1
Text: M68Z128W 3V, 1 Mbit 128 Kbit x 8 Low Power SRAM with Output Enable FEATURES SUMMARY • ULTRA LOW DATA RETENTION CURRENT Figure 1. Package – 10nA (typical) – 2.0µA (max) ■ OPERATION VOLTAGE: 3.0V (+0.6 / –0.3V) ■ 128 Kbit x 8 SRAM WITH OUTPUT ENABLE
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Original
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M68Z128W
TSOP32
M68Z128
M68Z128W
TSOP32
3VE1
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PDF
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Untitled
Abstract: No abstract text available
Text: M68Z128W 3V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable • LOW VOLTAGE: 3.0V (+0.6V / –0.3V) ■ 128Kb x 8 LOW POWER SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ LOW VCC DATA RETENTION: 1.4V ■ TRI-STATE COMMON I/O ■ LOW ACTIVE and STANDBY POWER
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Original
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M68Z128W
128Kb
TSOP32
M68Z128W
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PDF
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Untitled
Abstract: No abstract text available
Text: M68Z128W 3V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable • LOW VOLTAGE: 3.0V (+0.6V / –0.3V) ■ 128Kb x 8 LOW POWER SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ LOW VCC DATA RETENTION: 1.4V ■ TRI-STATE COMMON I/O ■ LOW ACTIVE and STANDBY POWER
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Original
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M68Z128W
128Kb
TSOP32
M68Z128W
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PDF
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Untitled
Abstract: No abstract text available
Text: M68Z128W 3V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable • LOW VOLTAGE: 3.0V (+0.6V / –0.3V) ■ 128Kb x 8 LOW POWER SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ LOW VCC DATA RETENTION: 1.4V ■ TRI-STATE COMMON I/O ■ LOW ACTIVE and STANDBY POWER
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Original
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M68Z128W
128Kb
M68Z128W
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PDF
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M68Z128W
Abstract: TSOP32
Text: M68Z128W 3V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable • LOW VOLTAGE: 3.0V (+0.6V / –0.3V) ■ 128Kb x 8 LOW POWER SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ LOW VCC DATA RETENTION: 1.4V ■ TRI-STATE COMMON I/O ■ LOW ACTIVE and STANDBY POWER
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Original
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M68Z128W
128Kb
M68Z128W
TSOP32
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PDF
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ABE 027
Abstract: 44-PIN M48T129V M48T129Y SOH44 TSOP32
Text: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
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Original
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M48T129Y
M48T129V
M48T129Y:
M48T129V:
32-pin
ABE 027
44-PIN
M48T129V
M48T129Y
SOH44
TSOP32
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PDF
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TSOP32 FOOTPRINT
Abstract: NVRAM 1KB SOH28 PCB FOOTPRINT M41T81 m48t35 M48T86 M48Z128 M48Z128V M48Z128Y M48Z129V
Text: Non-Volatile RAMs KEEP TIME, PROTECT DATA NVRAM products offer fast non-volatile memory solutions up to 16 Mbit density using battery backed SRAM, in both surface mount and through-hole packages. Integrated features include battery and crystal, real time clock, watchdog timer, power-on reset, square wave
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Original
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NL-5652
FLNVRAM/1000
TSOP32 FOOTPRINT
NVRAM 1KB
SOH28 PCB FOOTPRINT
M41T81
m48t35
M48T86
M48Z128
M48Z128V
M48Z128Y
M48Z129V
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PDF
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M41Txx
Abstract: SO16 M48Z35A M48T35A m48t35 M48Z128 M48Z129 M48Z2M1 M48Z35 M48Z512A
Text: Non-Volatile -Volatile RAM Non RAM Selection Tables Selection Tables STMicroelectronics NVRAM Selection Tables July 2000 ZEROPOWER M48Zxxx TIMEKEEPER M48Txxx M48STxxx NVRAM SUPERVISOR M40Zxxx M40SZxxx M48Txxx Optional Low Power SRAM M68Zxxx SERIAL RTC
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Original
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M48Zxxx
M48Txxx
M48STxxx
M40Zxxx
M40SZxxx
M68Zxxx
M41Txx
M41STXX
PTNV0013
M41Txx
SO16
M48Z35A
M48T35A
m48t35
M48Z128
M48Z129
M48Z2M1
M48Z35
M48Z512A
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PDF
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44-PIN
Abstract: M48T129V M48T129Y SOH44 TSOP32
Text: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
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Original
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M48T129Y
M48T129V
32-pin
M48T129Y:
M48T129V:
44-PIN
M48T129V
M48T129Y
SOH44
TSOP32
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PDF
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Untitled
Abstract: No abstract text available
Text: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
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Original
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M48T129Y
M48T129V
M48T129Y:
M48T129V:
32-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
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Original
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M48T129Y
M48T129V
32-pin
M48T129Y:
M48T129V:
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PDF
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M48Z128
Abstract: M48Z128V M48Z128Y SOH28 TSOP32
Text: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE
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Original
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M48Z128
M48Z128Y,
M48Z128V*
32-pin
M48Z128:
M48Z128Y:
M48Z128V:
M48Z128
M48Z128V
M48Z128Y
SOH28
TSOP32
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PDF
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Untitled
Abstract: No abstract text available
Text: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE
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Original
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M48Z128
M48Z128Y,
M48Z128V*
32-pin
M48Z128:
M48Z128Y:
M48Z128V:
28-PIN
32-LEAD
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PDF
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Untitled
Abstract: No abstract text available
Text: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
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Original
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M48T129Y
M48T129V
32-pin
M48T129Y:
M48T129V:
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PDF
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M48Z128V
Abstract: M48Z128Y SOH28 TSOP32 M48Z128 M68Z128
Text: M48Z128 M48Z128Y, M48Z128V 1 Mbit 128Kb x8 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS of DATA RETENTION in the ABSENCE of POWER ■ AUTOMATIC POWER-FAIL CHIP DESELECT
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Original
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M48Z128
M48Z128Y,
M48Z128V
128Kb
PMDIP32
M48Z128:
M48Z128Y:
M48Z128V:
28-PIN
M48Z128V
M48Z128Y
SOH28
TSOP32
M48Z128
M68Z128
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PDF
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Untitled
Abstract: No abstract text available
Text: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE
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Original
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M48Z128
M48Z128Y,
M48Z128V*
M48Z128:
M48Z128Y:
M48Z128V:
28-PIN
32-LEADd
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PDF
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Untitled
Abstract: No abstract text available
Text: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
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Original
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M48T129Y
M48T129V
32-pin
M48T129Y:
M48T129V:
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PDF
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44-PIN
Abstract: M48T129V M48T129Y SOH44 TSOP32
Text: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
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Original
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M48T129Y
M48T129V
M48T129Y:
M48T129V:
32-pin
44-PIN
M48T129V
M48T129Y
SOH44
TSOP32
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PDF
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14270x
Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02
Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,
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Original
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AN1012
14270x
8107X
m48t35
MK48T08
Zeropower
M48Z35Y
M48Z58
M48Z58Y
AN1012
M48Z02
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PDF
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44-PIN
Abstract: M48T129V M48T129Y SOH44 TSOP32
Text: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
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Original
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M48T129Y
M48T129V
M48T129Y:
M48T129V:
32-pin
44-PIN
M48T129V
M48T129Y
SOH44
TSOP32
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PDF
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44-PIN
Abstract: M48T129V M48T129Y M48T201V SOH44 TSOP32 129Y
Text: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and
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Original
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M48T129Y
M48T129V
M48T129Y:
M48T129V:
32-pin
44-PIN
M48T129V
M48T129Y
M48T201V
SOH44
TSOP32
129Y
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PDF
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A141
Abstract: A151 A161 M68Z128W TSOP32
Text: 5 7 . M68Z128W 3V, 1 Mbit 128Kb x8 Low Power SRAM with Output Enable • LOW VOLTAGE: 3.0V (+0.6V / -0.3V ) ■ 128Kb x 8 LOW POWER SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ LOW V Cc DATA RETENTION: 1,4V ■ TRI-STATE COMMON I/O
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OCR Scan
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M68Z128W
128Kb
M68Z128W
TSOP32
A141
A151
A161
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PDF
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