Untitled
Abstract: No abstract text available
Text: PRELIMINARY MT5LC1008 128K X 8 SRAM |U|IC=RON 128K x 8 S R A M SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I/O pins are 5V tolerant • High speed: 15,17,20 and 25ns • High-performance, low-power, CMOS double-metal process _ • Single +3.3V ±0.3V power supply
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MT5LC1008
32-Pin
bill54e
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M IC R O N 128K SRAM MODULE X M T4LS12832 32 SRAM M ODULE 128Kx 32 SRAM LOW VOLTAGE • H ig h sp eed : 20*, 25 an d 35n s • H ig h -d en sity 5 1 2 K B d esig n • H ig h -p e rfo rm a n ce, lo w -p o w er, C M O S d o u b le-m eta l p rocess
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T4LS12832
128Kx
64-Pin
MT4LS12832
i-1993,
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY I^ IIC R O N 128K MT4LS12832 32 SRAM MODULE X 128K X 32 SRAM SRAM MODULE LOW VOLTAGE FEATURES • High speed: 17, 20 and 25ns • High-density 512KB design • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply
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MT4LS12832
512KB
64-Pin
MT4LS12S32
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Untitled
Abstract: No abstract text available
Text: ADVANCE M M T 5 L C 1 008 128K X 8 S R A M I C R O N 128Kx 8 SRAM SRAM LOW VOLTAGE WITH OUTPUT ENABLE PIN ASSIGNMENT Top View • All I / O pins are 5V tolerant • High speed: 15, 17, 20, 25, 35 and 45ns • High-perform ance, low-power, CM OS double-metal
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128Kx
32-Pin
20nsN
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S18A
Abstract: No abstract text available
Text: MICRO N S E M I C O N D U C T O R INC b'lE T> m b l U S H 6 O D O T T l ? SIB • MRN AVAILABLE AUGUST 94 MICRON I S18A 1 MEG SRAM DIE SEMICONDUCTOR INC SRAM DIE 1 MEG SRAM 1 Meg X 1, 256K x 4 and 128K x 8 FEATURES DIE OUTLINE Top View) • • • • High speed: 12,15 and 20ns
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150mm
210x5
334x12
135x135
S18A
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24 volt 300 AH
Abstract: No abstract text available
Text: MICRON SEMICONDUCTOR INC b7E D • blllSMT 00GTMa3 481 ■ MRN ADVANCE MT5 LC 1008 X 8 SRAM M IC R O N B 128 K SEM ICON DUCTORIN C. SRAM 1 2 8 K x 8 SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I/O pins are 5V tolerant • High speed: 15,17, 20, 25,35 and 45ns
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00GTMa3
32-Pin
24rolled)
MT5LC1008
24 volt 300 AH
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Untitled
Abstract: No abstract text available
Text: MICRON TECHNOLOGY INC SSE D • blllSMT 0 D D 3 5 clfl 34T ■ MRN _ - Z 3 - 1H ADVANCE M T 5 L C 1 008 1 28K X 8 S R A M [ I^ IIC Z R O fS l SRAM 128K x 8 SRAM LOW VOLTAGE WITH OUTPUT ENABLE • High speed: 20,25,35 and 45ns • High-performance, low-power, CMOS double-metal
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32-Pin
0003b0S
MT5LC1008
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Untitled
Abstract: No abstract text available
Text: ADVANCE M I C R O N I M T 5 LC 1 008 128K X 8 S R A M LOW VOLTAGE WITH OUTPUT ENABLE FEATURES PIN ASSIGNMENT Top View • High speed: 20,25,35 and 45ns • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply _ • Easy memory expansion with CE1, CE2 and OE
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32-Pin
T5LC1008
MT5LC1008
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T4LS
Abstract: CE5 marking
Text: M I CR ON S E M I C O N D U C T O R INC b?E D • blllS^H GDO^bTH 230 HMRN PRELIMINARY M IC R O N 128K SRAM MODULE X MT4LS12832 32 SRAM MODULE 128Kx 32 SRAM LOW VOLTAGE • • • • • • • • • • High speed: 20*, 25 and 35ns High-density 512KB design
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MT4LS12832
128Kx
512KB
64-Pin
T4LS
CE5 marking
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Untitled
Abstract: No abstract text available
Text: JUL 14 '993 PRELIMINARY MT4LS12832 128K X 32 SRAM MODULE M IC R O N • SfcMcCONDOCIOR. MC SRAM MODULE 128K X 32 SRAM LOW VOLTAGE FEATURES • High speed: 20*, 25 and 35ns • High-density 512KB design • High-performance, low-power, CMOS double-metal process
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MT4LS12832
512KB
64-Pin
C1993.
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY R I E R O MT4LS12832 128K X 32 SRAM MOD ULE N SRAM MODULE 128K X 32 SRAM LOW VOLTAGE FEATURES • High speed: 17, 20 and 25ns • High-density 512KB design • High-perform ance, low-power, CM OS double-m etal process • Single +3.3V +0.3V power supply
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MT4LS12832
512KB
64-Pin
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marking RAV
Abstract: DJ28
Text: PRELIMINARY M I C R O M T 5 L C 1 008 128K X 8 SRAM N SRAM 128Kx 8 SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I / O pins are 5V tolerant • High speed: 15,17, 20 and 25ns • High-perform ance, low -pow er; CM OS double-metal process _ • Single +3.3V ±0.3V power supply
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128Kx
32-Pin
marking RAV
DJ28
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