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    SI2308DS Price and Stock

    Vishay Siliconix SI2308DS-T1-E3

    MOSFET N-CH 60V 2A SOT23-3
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    DigiKey SI2308DS-T1-E3 Reel 3,000
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    SI2308DS-T1-E3 Cut Tape 1
    • 1 $0.81
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    SI2308DS-T1-E3 Digi-Reel 1
    • 1 $0.81
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    Vishay Intertechnologies SI2308DS-T3

    60V, N-Ch 220Mohm 4.5V Rated Mosfet |Vishay SI2308DS-T3
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    Newark SI2308DS-T3 Reel 10,000
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    Vishay Intertechnologies SI2308DS-T1-GE3

    N Channel Mosfet; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:1.25W Rohs Compliant: Yes |Vishay SI2308DS-T1-GE3
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    Newark SI2308DS-T1-GE3 Cut Tape 3,000
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    SI2308DS-T1-GE3 Reel 3,000
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    Vishay Siliconix SI2308DS-T1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI2308DS-T1 5,682
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    Quest Components SI2308DS-T1 15
    • 1 $1.575
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    Vishay Intertechnologies SI2308DS

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    Bristol Electronics SI2308DS 4,190
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    Find more SI2308DS price and stock on Findchips.com

    SI2308DS Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si2308DS Unknown Metal oxide N-channel FET, Enhancement Type Original PDF
    Si2308DS Toshiba Power MOSFETs Cross Reference Guide Original PDF
    Si2308DS Vishay Intertechnology N-Channel 60-V (D-S) Rated MOSFET Original PDF
    SI2308DS Vishay Siliconix N-Channel 60-V (D-S) MOSFET Original PDF
    Si2308DS SPICE Device Model Vishay N-Channel 60-V (D-S) MOSFET Original PDF
    Si2308DS-T1 Vishay N-Channel 60-V (D-S) MOSFET Original PDF
    SI2308DS-T1 Vishay Intertechnology N-Channel 60-V (D-S) Rated MOSFET Original PDF
    SI2308DS-T1 General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 60V, Single, Pkg Style SOT-23 Scan PDF
    SI2308DS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 2A SOT23-3 Original PDF

    SI2308DS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT-23 marking a8

    Abstract: Si2308DS
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V


    Original     		PDF Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1-E3 Si2308DS-T1-GE3 11-Mar-11 SOT-23 marking a8

    SI2308DS

    Abstract: Si2308DS SPICE Device Model 70902
    Text: SPICE Device Model Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2308DS S-50383Rev. 21-Mar-05 Si2308DS SPICE Device Model 70902

    Si2308BDS

    Abstract: SI2308DS-T1-GE3 si2308bds-t1-ge3 si2308 SI2308BDS-T1-E3 SI2308DS Si2308DS-T1-E3 Si2308DS-T1 65178 VISHAY SI2308BDS
    Text: Specification Comparison Vishay Siliconix Si2308BDS vs. Si2308DS Description: N-Channel, 60-V D-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2308BDS-T1-GE3 replaces Si2308DS-T1-GE3 Si2308BDS-T1-E3 or Si2308BDS-T1-GE3 replaces Si2308DS-T1-E3


    Original     		PDF Si2308BDS Si2308DS OT-23 Si2308BDS-T1-GE3 Si2308DS-T1-GE3 Si2308BDS-T1-E3 Si2308DS-T1-E3 si2308 Si2308DS-T1 65178 VISHAY SI2308BDS

    Si2308DS

    Abstract: No abstract text available
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V


    Original     		PDF Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1-E3 Si2308DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.

    Si2308DS

    Abstract: No abstract text available
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.16 @ VGS = 10 V 2.0 0.22 @ VGS = 4.5 V 1.7 D 100% Rg Tested D RoHS Compliant Pb-free Available TO-236 (SOT-23) G 1 3 S D 2 Top View Si2308DS (A8)*


    Original     		PDF Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1--E3 18-Jul-08

    4093 DATASHEET

    Abstract: 4093 N si2308 AN609 Si2308DS 34093
    Text: Si2308DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si2308DS AN609 09-May-07 4093 DATASHEET 4093 N si2308 34093

    SI2308DS-T1-GE3

    Abstract: Si2308DS Si2308DS-T1 Si2308DS-T1-E3
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V


    Original     		PDF Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1-E3 Si2308DS-T1-GE3 18-Jul-08

    Si2308DS

    Abstract: Siliconix
    Text: SPICE Device Model Si2308DS N-Channel 60-V D-S Rated MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si2308DS Siliconix

    Si2308DS

    Abstract: No abstract text available
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.16 @ VGS = 10 V "2.0 0.22 @ VGS = 4.5 V "1.7 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2308DS (A8)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2308DS O-236 OT-23) S-58492--Rev. 15-June-98

    SI2308DS-T1-E3

    Abstract: No abstract text available
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.16 @ VGS = 10 V 2.0 0.22 @ VGS = 4.5 V 1.7 D 100% Rg Tested D RoHS Compliant Pb-free Available TO-236 (SOT-23) G 1 3 S D 2 Top View Si2308DS (A8)*


    Original     		PDF Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1--E3 S-50574--Rev. 04-Apr-05 SI2308DS-T1-E3

    Si2308DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2308DS 17-Apr-01

    Si2308DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2308DS 18-Jul-08

    SI2308DS-T1-E3

    Abstract: Si2308DS Si2308DS-T1
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.16 @ VGS = 10 V 2.0 0.22 @ VGS = 4.5 V 1.7 D 100% Rg Tested D RoHS Compliant Pb-free Available TO-236 (SOT-23) G 1 3 S D 2 Top View Si2308DS (A8)*


    Original     		PDF Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1--E3 08-Apr-05 SI2308DS-T1-E3

    Si2308DS-T1-GE3

    Abstract: Si2308DS Si2308DS-T1 Si2308DS-T1-E3
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V


    Original     		PDF Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1-E3 Si2308DS-T1-GE3 11-Mar-11

    Si2308DS

    Abstract: SI2308DS-T1-E3 Si2308DS-T1 A8 marking 250MA60 SI2308DSt1e3
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.16 @ VGS = 10 V 2.0 0.22 @ VGS = 4.5 V 1.7 D 100% Rg Tested D RoHS Compliant Pb-free Available TO-236 (SOT-23) G 1 3 S D 2 Top View Si2308DS (A8)*


    Original     		PDF Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1--E3 SI2308DS-T1-E3 A8 marking 250MA60 SI2308DSt1e3

    Si2308DS

    Abstract: Si2308DS-T1 20a8
    Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.16 @ VGS = 10 V 2.0 0.22 @ VGS = 4.5 V 1.7 D 100% Rg Tested TO-236 (SOT-23) G 1 3 S D 2 Top View Si2308DS (A8)* *Marking Code Ordering Information: Si2308DS-T1


    Original     		PDF Si2308DS O-236 OT-23) Si2308DS-T1 S-31725--Rev. 18-Aug-03 20a8

    ic hm 2007 Architecture

    Abstract: ic hm 2007 internal block diagram ,Architecture 8050 sot-23 C1608COG1H220J dc adaptor 9v 2a Bead 220 ohm 2.5A 10uh coilcraft 1210 "Dual PNP Transistor" C1608COG1H102J sot-23-5 vishay
    Text: SP6134 Dual Supply Synchronous Buck Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ VCC 1 3V to 15V Step Down Achieved Using Dual Input Small 10-Pin MSOP Package 2A to 15A Ouput Capability Highly Integrated Design, Minimal Components


    Original     		PDF SP6134 10-Pin 20III 20Loop 20Oct12-06 CA95035 ic hm 2007 Architecture ic hm 2007 internal block diagram ,Architecture 8050 sot-23 C1608COG1H220J dc adaptor 9v 2a Bead 220 ohm 2.5A 10uh coilcraft 1210 "Dual PNP Transistor" C1608COG1H102J sot-23-5 vishay

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    LX1996ILQTR

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    Text: LX1996 Multi-string LED Back-light Controller TM P RODUCTION D ATASHEET DESCRIPTION Temperature compensated LED current is accomplished by a dedicated input pin OT that in conjunction with an external thermistor measures the LED’s ambient temperature and thereby prevents over


    Original     		PDF LX1996 LX1996 28Vdc adjustab006" LX1996ILQTR AM2358N 4500B "Ultrasonic Sensor" 1MHz View Sonic lcd monitor power supply circuit diagram capacitor 4.7uF 37V SM07B-SRSS LX1972 Si3458DV

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: LT3755/LT3755-1/LT3755-2 40VIN, 75VOUT LED Controllers FEATURES n n n n n n n n n n n n n n n n DESCRIPTION The LT 3755, LT3755-1 and LT3755-2 are DC/DC controllers designed to operate as a constant-current source for driving high current LEDs. They drive a low side external


    Original     		PDF LT3755/LT3755-1/LT3755-2 40VIN, 75VOUT LT3755-1 LT3755-2 100kkages LT3518 TSSOP16E LT3756/LT3756-1/ LT3756-2

    Untitled

    Abstract: No abstract text available
    Text: Si2308DS VISHAY Siliconix ▼ N-Channel 60-V D-S Rated MOSFET New Product PRODUCT SUM M ARY v „s (V) RDS(ON) (-3) lD (A) 0.16 @ V GS = 10 V ±2 .0 0.22 @ VGS = 4.5 V ±1 .7 60 TO-236 (SOT-23) *Marking Code A B S O L U T E M A X IM U M R A TIN G S (TA = 2 5 ° C U N LE S S O T H E R W IS E N O TED )


    OCR Scan     		PDF Si2308DS O-236 OT-23) S-58492â 15-June-98