SI2308 Search Results

SI2308 Price and Stock

Filter by Manufacturer


Vishay Siliconix SI2308BDS-T1-E3 MOSFET N-CH 60V 2.3A SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2308BDS-T1-E3	Cut Tape	16,235		1	1 $0.81 10 $0.504 100 $0.81 1000 $0.22442 10000 $0.22442	Buy Now
	SI2308BDS-T1-E3	Digi-Reel	16,235		1	1 $0.81 10 $0.504 100 $0.81 1000 $0.22442 10000 $0.22442	Buy Now
	SI2308BDS-T1-E3	Reel	15,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.1929	Buy Now
RS	SI2308BDS-T1-E3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.453	Get Quote
New Advantage Corporation	SI2308BDS-T1-E3		6,000		1	1 - 10 - 100 - 1000 - 10000 $0.1667	Buy Now
UMW SI2308A 60V 2A 1.25W 160MR@10V,2A 3V@250
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2308A	Cut Tape	2,990		1	1 $0.48 10 $0.296 100 $0.1876 1000 $0.1266 10000 $0.1266	Buy Now
	SI2308A	Digi-Reel	2,990		1	1 $0.48 10 $0.296 100 $0.1876 1000 $0.1266 10000 $0.1266	Buy Now
	SI2308A	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.10699	Buy Now
Vishay Siliconix SI2308BDS-T1-BE3 N-CHANNEL 60-V (D-S) MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2308BDS-T1-BE3	Cut Tape	2,660		1	1 $0.81 10 $0.504 100 $0.81 1000 $0.22442 10000 $0.22442	Buy Now
	SI2308BDS-T1-BE3	Digi-Reel	2,660		1	1 $0.81 10 $0.504 100 $0.81 1000 $0.22442 10000 $0.22442	Buy Now
	SI2308BDS-T1-BE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.1929	Buy Now
New Advantage Corporation	SI2308BDS-T1-BE3		12,000		1	1 - 10 - 100 - 1000 - 10000 $0.1786	Buy Now
Vishay Siliconix SI2308DS-T1-E3 MOSFET N-CH 60V 2A SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2308DS-T1-E3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.19157	Buy Now
	SI2308DS-T1-E3	Cut Tape			1	1 $0.81 10 $0.81 100 $0.81 1000 $0.81 10000 $0.81	Buy Now
	SI2308DS-T1-E3	Digi-Reel			1	1 $0.81 10 $0.81 100 $0.81 1000 $0.81 10000 $0.81	Buy Now
Vishay Siliconix SI2308BDS-T1-GE3 MOSFET N-CH 60V 2.3A SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2308BDS-T1-GE3	Digi-Reel			1	1 $0.81 10 $0.504 100 $0.81 1000 $0.81 10000 $0.81	Buy Now
	SI2308BDS-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.1929	Buy Now
	SI2308BDS-T1-GE3	Cut Tape			1	1 $0.81 10 $0.504 100 $0.81 1000 $0.81 10000 $0.81	Buy Now
RS	SI2308BDS-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.453	Get Quote
New Advantage Corporation	SI2308BDS-T1-GE3		60,000		1	1 - 10 - 100 - 1000 - 10000 $0.1743	Buy Now

Find more SI2308 price and stock on Findchips.com

SI2308 Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF
SI2308BDS-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 2.3A SOT23-3	Original	PDF
SI2308BDS-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 2.3A SOT23-3	Original	PDF
SI2308CDS-T1-GE3	Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 2.6A SOT23-3	Original	PDF
Si2308DS	Unknown	Metal oxide N-channel FET, Enhancement Type	Original	PDF
Si2308DS	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
Si2308DS	Vishay Intertechnology	N-Channel 60-V (D-S) Rated MOSFET	Original	PDF
SI2308DS	Vishay Siliconix	N-Channel 60-V (D-S) MOSFET	Original	PDF
Si2308DS SPICE Device Model	Vishay	N-Channel 60-V (D-S) MOSFET	Original	PDF
Si2308DS-T1	Vishay	N-Channel 60-V (D-S) MOSFET	Original	PDF
SI2308DS-T1	Vishay Intertechnology	N-Channel 60-V (D-S) Rated MOSFET	Original	PDF
SI2308DS-T1	General Semiconductor	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 60V, Single, Pkg Style SOT-23	Scan	PDF
SI2308DS-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 2A SOT23-3	Original	PDF

SI2308 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Si2308BDS-T1-GE3 Abstract: si2308bds Text: New Product Si2308BDS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.156 at VGS = 10 V 2.3 0.192 at VGS = 4.5 V 2.1 VDS (V) 60 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	PDF	Si2308BDS O-236 SSOT23) Si2308BDS-T1-E3 Si2308BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.
Si2308BDS Abstract: Si2308BDS-T1-E3 Text: New Product Si2308BDS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.156 at VGS = 10 V 2.3 0.192 at VGS = 4.5 V 2.1 VDS (V) 60 Qg (Typ.) • 100 % Rg Tested • 100 % UIS Tested 2.3 nC	Original	PDF	Si2308BDS O-236 SSOT23) Si2308BDS-T1-E3 18-Jul-08
SOT-23 marking a8 Abstract: Si2308DS Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V	Original	PDF	Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1-E3 Si2308DS-T1-GE3 11-Mar-11 SOT-23 marking a8
Si2308BDS-T1-GE3 Abstract: Si2308BDS SI2308BDS-T1-E3 Text: New Product Si2308BDS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.156 at VGS = 10 V 2.3 0.192 at VGS = 4.5 V 2.1 VDS (V) 60 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	PDF	Si2308BDS O-236 SSOT23) Si2308BDS-T1-E3 Si2308BDS-T1-GE3 15lectual 18-Jul-08
SI2308DS Abstract: Si2308DS SPICE Device Model 70902 Text: SPICE Device Model Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si2308DS S-50383Rev. 21-Mar-05 Si2308DS SPICE Device Model 70902
Si2308BDS-T1-GE3 Abstract: Si2308BDS Si2308BDS-T1-E3 Text: New Product Si2308BDS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.156 at VGS = 10 V 2.3 0.192 at VGS = 4.5 V 2.1 VDS (V) 60 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	PDF	Si2308BDS O-236 SSOT23) Si2308BDS-T1-E3 Si2308BDS-T1-GE3 11-Mar-11
Si2308BDS Abstract: SI2308DS-T1-GE3 si2308bds-t1-ge3 si2308 SI2308BDS-T1-E3 SI2308DS Si2308DS-T1-E3 Si2308DS-T1 65178 VISHAY SI2308BDS Text: Specification Comparison Vishay Siliconix Si2308BDS vs. Si2308DS Description: N-Channel, 60-V D-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2308BDS-T1-GE3 replaces Si2308DS-T1-GE3 Si2308BDS-T1-E3 or Si2308BDS-T1-GE3 replaces Si2308DS-T1-E3	Original	PDF	Si2308BDS Si2308DS OT-23 Si2308BDS-T1-GE3 Si2308DS-T1-GE3 Si2308BDS-T1-E3 Si2308DS-T1-E3 si2308 Si2308DS-T1 65178 VISHAY SI2308BDS
Si2308DS Abstract: No abstract text available Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V	Original	PDF	Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1-E3 Si2308DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.
Si2308DS Abstract: No abstract text available Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.16 @ VGS = 10 V 2.0 0.22 @ VGS = 4.5 V 1.7 D 100% Rg Tested D RoHS Compliant Pb-free Available TO-236 (SOT-23) G 1 3 S D 2 Top View Si2308DS (A8)*	Original	PDF	Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1--E3 18-Jul-08
4093 DATASHEET Abstract: 4093 N si2308 AN609 Si2308DS 34093 Text: Si2308DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si2308DS AN609 09-May-07 4093 DATASHEET 4093 N si2308 34093
SI2308DS-T1-GE3 Abstract: Si2308DS Si2308DS-T1 Si2308DS-T1-E3 Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V	Original	PDF	Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1-E3 Si2308DS-T1-GE3 18-Jul-08
Si2308BDS Abstract: Si2308BDS-T1-E3 Text: New Product Si2308BDS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.156 at VGS = 10 V 2.3 0.192 at VGS = 4.5 V 2.1 VDS (V) 60 Qg (Typ.) • 100 % Rg Tested • 100 % UIS Tested 2.3 nC	Original	PDF	Si2308BDS O-236 SSOT23) Si2308BDS-T1-E3 08-Apr-05
Si2308DS Abstract: Siliconix Text: SPICE Device Model Si2308DS N-Channel 60-V D-S Rated MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse	Original	PDF	Si2308DS Siliconix
Si2308DS Abstract: No abstract text available Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.16 @ VGS = 10 V "2.0 0.22 @ VGS = 4.5 V "1.7 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2308DS (A8)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)	Original	PDF	Si2308DS O-236 OT-23) S-58492--Rev. 15-June-98

c 4742 Abstract: si2308 AN609 Si2308BDS Text: Si2308BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si2308BDS AN609 25-Mar-08 c 4742 si2308
SI2308DS-T1-E3 Abstract: No abstract text available Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.16 @ VGS = 10 V 2.0 0.22 @ VGS = 4.5 V 1.7 D 100% Rg Tested D RoHS Compliant Pb-free Available TO-236 (SOT-23) G 1 3 S D 2 Top View Si2308DS (A8)*	Original	PDF	Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1--E3 S-50574--Rev. 04-Apr-05 SI2308DS-T1-E3
SSOT23 Abstract: No abstract text available Text: New Product Si2308BDS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.156 at VGS = 10 V 2.3 0.192 at VGS = 4.5 V 2.1 VDS (V) 60 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	PDF	Si2308BDS O-236 SSOT23) Si2308BDS-T1-E3 Si2308BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A SSOT23
Untitled Abstract: No abstract text available Text: SPICE Device Model Si2308BDS www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C	Original	PDF	Si2308BDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Si2308DS Abstract: No abstract text available Text: SPICE Device Model Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si2308DS 17-Apr-01
Si2308DS Abstract: No abstract text available Text: SPICE Device Model Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si2308DS 18-Jul-08
SI2308DS-T1-E3 Abstract: Si2308DS Si2308DS-T1 Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.16 @ VGS = 10 V 2.0 0.22 @ VGS = 4.5 V 1.7 D 100% Rg Tested D RoHS Compliant Pb-free Available TO-236 (SOT-23) G 1 3 S D 2 Top View Si2308DS (A8)*	Original	PDF	Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1--E3 08-Apr-05 SI2308DS-T1-E3
Si2308DS-T1-GE3 Abstract: Si2308DS Si2308DS-T1 Si2308DS-T1-E3 Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V	Original	PDF	Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1-E3 Si2308DS-T1-GE3 11-Mar-11
marking code vishay SILICONIX sot-23 Abstract: Siliconix Cross Reference SI2308DS-T1-E3 Si2308DS Text: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested ID (A) 0.16 at VGS = 10 V 2.0 0.22 at VGS = 4.5 V	Original	PDF	Si2308DS O-236 OT-23) Si2308DS-T1 Si2308DS-T1-E3 Si2308DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC marking code vishay SILICONIX sot-23 Siliconix Cross Reference
Untitled Abstract: No abstract text available Text: Si2308DS VISHAY Siliconix ▼ N-Channel 60-V D-S Rated MOSFET New Product PRODUCT SUM M ARY v „s (V) RDS(ON) (-3) lD (A) 0.16 @ V GS = 10 V ±2 .0 0.22 @ VGS = 4.5 V ±1 .7 60 TO-236 (SOT-23) *Marking Code A B S O L U T E M A X IM U M R A TIN G S (TA = 2 5 ° C U N LE S S O T H E R W IS E N O TED )	OCR Scan	PDF	Si2308DS O-236 OT-23) S-58492â 15-June-98

Privacy Settings

SI2308 Search Results

SI2308 Price and Stock

Vishay Siliconix SI2308BDS-T1-E3

UMW SI2308A

Vishay Siliconix SI2308BDS-T1-BE3

Vishay Siliconix SI2308DS-T1-E3

Vishay Siliconix SI2308BDS-T1-GE3

SI2308 Datasheets (12)

SI2308 Datasheets Context Search

Si2308BDS-T1-GE3

Si2308BDS

SOT-23 marking a8

Si2308BDS-T1-GE3

SI2308DS

Si2308BDS-T1-GE3

Si2308BDS

Si2308DS

Si2308DS

4093 DATASHEET

SI2308DS-T1-GE3

Si2308BDS

Si2308DS

Si2308DS

c 4742

SI2308DS-T1-E3

SSOT23

Untitled

Si2308DS

Si2308DS

SI2308DS-T1-E3

Si2308DS-T1-GE3

marking code vishay SILICONIX sot-23

Untitled