Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI1414 Search Results

    SF Impression Pixel

    SI1414 Price and Stock

    Vishay Siliconix SI1414DH-T1-GE3

    MOSFET N-CH 30V 4A SOT-363
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI1414DH-T1-GE3 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    SI1414DH-T1-GE3 Cut Tape
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    SI1414DH-T1-GE3 Digi-Reel 1
    • 1 $0.5
    • 10 $0.5
    • 100 $0.5
    • 1000 $0.5
    • 10000 $0.5
    		Buy Now

    Others SI1414DH

    AVAILABLE EU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI1414DH 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Vishay Intertechnologies SI1414DHT1GE3

    N-CHANNEL 30 V (D-S) MOSFET Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI1414DHT1GE3 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    SI1414 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI1414DH-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 4A SOT-363 Original PDF

    SI1414 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si1414

    Abstract: No abstract text available
    Text: New Product Si1414DH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.046 at VGS = 4.5 V 4 0.050 at VGS = 2.5 V 4 0.057 at VGS = 1.8 V 4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si1414DH 2002/95/EC OT-363 SC-70 Si1414DH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si1414

    Untitled

    Abstract: No abstract text available
    Text: Si1414DH www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a 0.046 at VGS = 4.5 V 4 0.050 at VGS = 2.5 V 4 0.057 at VGS = 1.8 V 4 VDS (V) 30 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested • Material categorization:


    Original     		PDF Si1414DH OT-363 SC-70 Si1414DH-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1414DH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.046 at VGS = 4.5 V 4 0.050 at VGS = 2.5 V 4 0.057 at VGS = 1.8 V 4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si1414DH 2002/95/EC OT-363 SC-70 Si1414DH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si1414

    Abstract: Si19xxEDH
    Text: New Product Si1414DH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.046 at VGS = 4.5 V 4 0.050 at VGS = 2.5 V 4 0.057 at VGS = 1.8 V 4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si1414DH 2002/95/EC OT-363 SC-70 Si1414DH-T1-GE3 11-Mar-11 si1414 Si19xxEDH

    Untitled

    Abstract: No abstract text available
    Text: Si1414DH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.046 at VGS = 4.5 V 4 0.050 at VGS = 2.5 V 4 0.057 at VGS = 1.8 V 4 • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization:


    Original     		PDF Si1414DH OT-363 SC-70 Si1414DH-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1414DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si1414DH AN609, 0794u 4945m 0489m 2514u 3458u 1674m 2840m

    si1414dh

    Abstract: si1414
    Text: SPICE Device Model Si1414DH Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si1414DH 18-Jul-08 si1414

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si1414DH www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si1414DH 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836