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Vishay Siliconix SI1414DH-T1-GE3 MOSFET N-CH 30V 4A SOT-363
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	SI1414DH-T1-GE3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI1414DH-T1-GE3	Digi-Reel			1	1 $0.5 10 $0.5 100 $0.5 1000 $0.5 10000 $0.5	Buy Now
Others SI1414DH AVAILABLE EU
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ComSIT USA	SI1414DH		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI1414DHT1GE3 N-CHANNEL 30 V (D-S) MOSFET Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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ComSIT USA	SI1414DHT1GE3		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI1414DH Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI1414DH-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 4A SOT-363		Original	PDF

SI1414DH Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
si1414 Abstract: No abstract text available Text: New Product Si1414DH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.046 at VGS = 4.5 V 4 0.050 at VGS = 2.5 V 4 0.057 at VGS = 1.8 V 4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si1414DH 2002/95/EC OT-363 SC-70 Si1414DH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si1414
Untitled Abstract: No abstract text available Text: Si1414DH www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a 0.046 at VGS = 4.5 V 4 0.050 at VGS = 2.5 V 4 0.057 at VGS = 1.8 V 4 VDS (V) 30 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested • Material categorization:	Original	PDF	Si1414DH OT-363 SC-70 Si1414DH-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product Si1414DH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.046 at VGS = 4.5 V 4 0.050 at VGS = 2.5 V 4 0.057 at VGS = 1.8 V 4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si1414DH 2002/95/EC OT-363 SC-70 Si1414DH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
si1414 Abstract: Si19xxEDH Text: New Product Si1414DH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.046 at VGS = 4.5 V 4 0.050 at VGS = 2.5 V 4 0.057 at VGS = 1.8 V 4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si1414DH 2002/95/EC OT-363 SC-70 Si1414DH-T1-GE3 11-Mar-11 si1414 Si19xxEDH
Untitled Abstract: No abstract text available Text: Si1414DH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.046 at VGS = 4.5 V 4 0.050 at VGS = 2.5 V 4 0.057 at VGS = 1.8 V 4 • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization:	Original	PDF	Si1414DH OT-363 SC-70 Si1414DH-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: Si1414DH_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	Si1414DH AN609, 0794u 4945m 0489m 2514u 3458u 1674m 2840m
si1414dh Abstract: si1414 Text: SPICE Device Model Si1414DH Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si1414DH 18-Jul-08 si1414
Untitled Abstract: No abstract text available Text: SPICE Device Model Si1414DH www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	PDF	Si1414DH 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836