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    SDT1641 Search Results

    SDT1641 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SDT1641 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    SDT1641 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    SDT1641 Solitron Devices NPN Power Transistor Scan PDF
    SDT1641 Solitron Devices Planar Power Transistor Scan PDF

    SDT1641 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD947

    Abstract: to-53 a/TO111
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) hFE fT ICBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)«at Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 .15 .


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    PDF SDT3762 SDT3752 SDT1641 SDT3305 BD947 to-53 a/TO111

    SDT85502

    Abstract: SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879
    Text: Device Type VCEO 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913


    Original
    PDF 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 SDT85502 SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879

    2N5286

    Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
    Text: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT


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    PDF 2N2657 2N2658 2N2877 O-111 2N2878 2N2879 2N2880 2N5286 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562

    12MHZ

    Abstract: No abstract text available
    Text: at SOLITRON DEVICES INC dbJ û3&.ûLiGS oooasbE □ or ELEMENT NUMBER 116 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 3 0 .0 0 0 A Aluminum FORMERLY 16 Collector: Etched Silicon


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    PDF 203mm) 12MHz 12MHz 150pF

    solitrondevices

    Abstract: SOLITRON 200V transistor npn 5a SDT1641-SDT1668
    Text: 8368602 SOLITRON-DEVICES INC T5 95D 02841 DE |ö3bflbQB DQ0EÖ41 3 Devices, Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POW ER TRANSISTOR FORMERLY 16 CHIP NUMBER CONTACT METALLIZATION B ase and emitter: > 30,000 A Aluminum


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    PDF 203mm) 12MHz 150pF 150pF SDT1641-SDT1668, SDT4901-SDT4905 K10IP solitrondevices SOLITRON 200V transistor npn 5a SDT1641-SDT1668

    B3597

    Abstract: B3603 4JD7A35 2N2649 B3604 bfs23 BLY25 sdt1665 2N2485 MHT9003
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT


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    PDF NPN110. 300MS BR101FS MT50a BR200B5 200MS BR201BS B3597 B3603 4JD7A35 2N2649 B3604 bfs23 BLY25 sdt1665 2N2485 MHT9003

    2SC736

    Abstract: BLY25 BLY26 CP430 2N5276 TA-D93 ML101B TAB101 NS9726
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C


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    PDF NPN110. BD265 BD265A BD265B Y220b BD265L BD266L BD267L 2SC736 BLY25 BLY26 CP430 2N5276 TA-D93 ML101B TAB101 NS9726

    SDT4901

    Abstract: No abstract text available
    Text: -Jdlitron Devices. Inc. lFia ë>(L£l©ir © Ä T Ä ( L < MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CHIP NUMBER (FORMERLY 16 CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold


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    PDF 203mm) SDT4901

    SDT4901

    Abstract: No abstract text available
    Text: C Ä 7 Ä [L MEDIUM TO HIGH VOLTAGE, FAST SWITCHING o n tr a n Devices. Inc. NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR (FORMERLY 16 C H IP N U M B E R CONTACT METALLIZATION B ase and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilv er" also available)


    OCR Scan
    PDF 203mm) 12MHz 12MHz 150pF SDT4901

    oms 450

    Abstract: BLY26 2n1608 BLY25 CP430 B3547 usaf520es070 usaf521es071
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    PDF NPN110. USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 oms 450 BLY26 2n1608 BLY25 CP430 B3547 usaf520es070 usaf521es071