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    2N4112 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N4112 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=5 / Hfe=100-200 / fT(Hz)=60M / Pwr(W)=30 Original PDF
    2N4112 API Electronics Short form transistor data Short Form PDF
    2N4112 General Diode Transistor Selection Guide Scan PDF
    2N4112 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N4112 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N4112 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N4112 Unknown Vintage Transistor Datasheets Scan PDF
    2N4112 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N4112 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N4112 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N4112 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N4112 Pirgo Electronics 5 Amp NPN Silicon Transistors Scan PDF
    2N4112 PPC Products Transistor Short Form Data Scan PDF
    2N4112 Silicon Transistor Low Frequency Silicon Power Transistor Scan PDF
    2N4112 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N4112 Solitron Devices Planar Power Transistor Scan PDF

    2N4112 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SDT85502

    Abstract: SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879
    Text: Device Type VCEO 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 2N3746 2N3747 2N3748 2N3749 2N3750 2N3751 2N3752 2N3996 2N3997 2N3998 2N3999 2N4111 2N4112 2N4113 2N4150 2N4305 2N4307 2N4309 2N4311 2N4395 2N4396 2N4895 2N4896 2N4897 2N4913


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    PDF 2N2657 2N2658 2N2877 2N2878 2N2879 2N2880 2N2890 2N2891 2N3744 2N3745 SDT85502 SDT849 a/TO111 2N5002 SDT3403 SDT6314 BU208 2N2657 2N2877 2N2879

    2N4112

    Abstract: No abstract text available
    Text: 2N4112 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF 2N4112 O204AA) 31-Jul-02 2N4112

    2N4112

    Abstract: No abstract text available
    Text: 2N4112 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF 2N4112 O204AA) 18-Jun-02 2N4112

    Untitled

    Abstract: No abstract text available
    Text: 2N4112 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF 2N4112 O204AA) 16-Jul-02

    2N1724

    Abstract: 2N3624
    Text: 8440355 SPACE POWER ELECTRONICS "'"""SPACE POWER ELECTRONICS 89C flT 00107 D 7 J 5 . E DF| 6440355 DDD01D7 Hi-Rel PLANAR P O W E R - 1 0 AMP WH TO-66 40W@T =100°C TO-5 5W@T =100°C o P TO-3 80W@T =100°C *A11 leads e l e c t r i c a l l y i s o l a t e d from case


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    PDF DDD01D7 2N1724 2N1725 2N2101 2N2811 2N2812 2N2813 2N2814 2N3445 2N3446 2N3624

    to-53

    Abstract: TO111 2N5978 NPN
    Text: POWER SILICON TRANSISTORS Item Number »C Part Number Manufacturer Type Max A V (BR)CEO on PD Max hFE fT ON) Min (Hz) r •CBO Max (A) Max (s) (CE)sat Max (Ohms) T Oper Package Style Max (°C) D vie s 20 Watts or More, (Cont'd) . . .5 . .10 . . . -15 -20


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    PDF 2N4112 2SA1069K 2SA12 O-111 O-111 to-53 TO111 2N5978 NPN

    Untitled

    Abstract: No abstract text available
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N4031 2N4032 2N4033 2N4033CSM4 2N4036 2N4037 2N4046 2N4111 2N4112 2N4113 2N4114 2N4150 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4240 2N4260 2N4269


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    PDF 2N4031 2N4032 2N4033 2N4033CSM4 2N4036 2N4037 2N4046 2N4111 2N4112 2N4113

    Untitled

    Abstract: No abstract text available
    Text: mÎ æ J E L E C T R O N I C S , IN C. / -11 COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No 2N3751 Case TO1 1 1 /1 TO- 2N3752 2N3850 TO- 2N3851 2N3852 VcBO VCEO bus Volts Volts 80 60 V e BO Volts ’E Min hi Max 8 100 300 VCE 5 Vb e (sat) 1


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    PDF 2N3751 2N3752 2N3850 2N3851 2N3852 O-111 O-114

    JAN2N3996

    Abstract: 2N4307 ISM22 2n3183
    Text: A P 'e l e c t r o n COLLECTOR CURRENT = 5 AMPS NPN TYPES • VCEO sus V olts VEBO V olts hFE Min Max ■ Ft Vc e ic V c e (sat) Vb e (sat) @ Ic @ IB Mt 80 8 20 60 5 1 1 .2 5 2 1 .1 30 80 8 40 120 5 1 1. 25 2 1 .1 30 60 80 80 80 80 8 8 5 5 5 40 40 100 100


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    2N3907

    Abstract: No abstract text available
    Text: 4ÖE D • A1331Ö7 GÜD0437 SEMELABr TbS H S n L B SEflELAB LTD 7^ 27. BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3997 2N3998 2N3999 2N4000 2N4001 2N4026 2N4027 2N4028


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    PDF A1331Ã D0437 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3907

    2n2301

    Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
    Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74


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    PDF 2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815

    4116 2n

    Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
    Text: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE


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    PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2NI718 2N1719 4116 2n j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442

    2N5286

    Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
    Text: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT


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    PDF 2N2657 2N2658 2N2877 O-111 2N2878 2N2879 2N2880 2N5286 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562

    SILICON TRANSISTOR CORP

    Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060
    Text: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP T*VS*07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V


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    PDF 8E54022 FE20-120 30MHz fTTo40M 50MHz 2N4863 2N5662 N5663 2N5333 SILICON TRANSISTOR CORP STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060

    2N3751

    Abstract: 2N3752 2N3788 2N3850 2N3851 2N3852 2N3853 2N3902 2N3928 2N3929
    Text: A P I ELE C TR ON IC S INC 2b 00^3592 A P I ELECTR ONI CS ¡>T| 00435^2 DQGD223 1 | INC 26C 00223 D - f ’-3 3 -& I COLLECTOR CURRENT = 5 AMPS NPN TYPES - CONTINUED Device No 2N3751 2N3752 2N3788 2N3850 2N3851 2N3852 2N3853 2N3902 2N3928 2N3929 2N3996 JAN


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    PDF 0D0D223 2N3751 2N3752 2N3788 2N3850 2N3851 2N3852 2N4300 2N4305 2N4307 2N3853 2N3902 2N3928 2N3929

    2N4148

    Abstract: 2N3638 transistor 2N3638 Transistor 2n3005 2N2706 2N3731 2n4146 transistor 2n2706 2N4250 2N4147
    Text: DIGITRON ELECTRONIC CORP 3bE D SfiMStrO? 0□ □ □ □ □ S DGE Page #5 DIQITRON ELECTRONIC” 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax J O H N J. S C H W A R T Z ENGINEERING D I G I T R O N E LE C TR ON IC S , CORP.


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    PDF 2N2419A 2N3001 2N3730 2N4002 2N4140 2N4299 2N2483 2N3002 2N3731 2N4003 2N4148 2N3638 transistor 2N3638 Transistor 2n3005 2N2706 2n4146 transistor 2n2706 2N4250 2N4147

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    2N3303

    Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
    Text: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any


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    PDF Chiana56 2N3303 T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    2N2632

    Abstract: No abstract text available
    Text: t le = 5.0 AMPS 4-6 DEVICE TYPE PACKAGE 2N1208 2NÎ209 2N1212 2N1616 2N1617 TO-61 TO-61 TO-61 TO-61 TO-61 2N1618 2N1702 2N1724 2N1724A 2N1725 TO-61 TO-3 TO-61 TO-61 TO-61 2N2632 2N2633 2N2634 2N2657 2N2658 hFE@ VOLTS BVeb0 VOLTS P D@ 100°C WATTS 60 45 60


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    PDF 2N1208 2N1212 2N1616 2N1617 2N1618 2N1702 2N1724 2N1724A 2N1725 2N2632

    Untitled

    Abstract: No abstract text available
    Text: Micmsemi NPN Transistors Part Number NPN JANTXV2N3420 JANTXV2N3420S 2N3419 2N3419S 2N3421 2N3421S JAN2N3419 JAN2N3419S JAN2N3421 JAN2N3421S JANS2N3419 JANS2N3419S JANS2N3421 JANS2N3421S JANTX2N3419 JANTX2N3419S JANTX2N3421 JANTX2N3421S JANTXV2N3419 JANTXV2N3419S


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    PDF NPN-10

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711