RJK60S5DPK Search Results

RJK60S5DPK Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJK60S5DPK-M0#T0		Renesas Electronics Corporation	N Channel Power MOSFET, TO-3PSG, /Tube

RJK60S5DPK Price and Stock

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Rochester Electronics LLC RJK60S5DPK-M0-T0 MOSFET N-CH 600V 20A TO3PSG
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJK60S5DPK-M0-T0	Tube			19	1 - 10 - 100 $16.03 1000 $16.03 10000 $16.03	Buy Now
Renesas Electronics Corporation RJK60S5DPK-M0#T0 Trans MOSFET N-CH Si 600V 20A 3-Pin(3+Tab) TO-3PSG Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	RJK60S5DPK-M0#T0		69,897		20	1 - 10 - 100 $18.1125 1000 $16.375 10000 $16.375	Buy Now
Rochester Electronics	RJK60S5DPK-M0#T0		69,897		1	1 $15.41 10 $15.41 100 $14.49 1000 $13.1 10000 $13.1	Buy Now

RJK60S5DPK Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RJK60S5DPK-M0#T0		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 20A TO-3PSG		Original	PDF

RJK60S5DPK Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
RJK60S5 Abstract: PRSS0004ZH-A RJK60 RJK60S5DPK-M0 RJK60S rjk60s5dpk Text: Preliminary Datasheet RJK60S5DPK-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0245EJ0100 Rev.1.00 Jan 19, 2011 Features • Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching	Original	PDF	RJK60S5DPK-M0 R07DS0245EJ0100 PRSS0004ZH-A Stora9044 RJK60S5 PRSS0004ZH-A RJK60 RJK60S5DPK-M0 RJK60S rjk60s5dpk
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0245EJ0400 Rev.4.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching	Original	PDF	RJK60S5DPK-M0 R07DS0245EJ0400 PRSS0004ZH-A
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0245EJ0500 Rev.5.00 Jan 23, 2013 Features • Superjunction MOSFET  Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching	Original	PDF	RJK60S5DPK-M0 R07DS0245EJ0500 PRSS0004ZH-A
RJK60S5 Abstract: No abstract text available Text: Preliminary Datasheet RJK60S5DPK-M0 600V - 20A - SJ MOS FET High Speed Power Switching R07DS0245EJ0400 Rev.4.00 Apr 23, 2012 Features • Superjunction MOSFET • Low on-resistance RDS on = 0.150 Ω typ. (at ID = 10 A, VGS = 10 V, Ta = 25°C) • High speed switching	Original	PDF	RJK60S5DPK-M0 R07DS0245EJ0400 PRSS0004ZH-A RJK60S5
RJK60S5 Abstract: RJK60S5DPK-M0 Text: Preliminary Datasheet RJK60S5DPK-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0245EJ0300 Rev.3.00 Feb 06, 2012 Features • Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching	Original	PDF	RJK60S5DPK-M0 R07DS0245EJ0300 PRSS0004ZH-A RJK60S5 RJK60S5DPK-M0
RJK60S5 Abstract: r2a20118 rjk60s7 RJK60S3DPP-M0 RJK60S7DPN-E0 RJK60S7DPP-E0 RJK60s3dpp RJK60s4dpp-M0 Text: High-voltage SJ-MOSFETs New SJ-MOSFETs with Very Low RDS on and Ultra-low Qgd A new line-up of high-voltage SJ-MOSFETs that combine very low RDS(on) and ultra-low Qgd enable switching power supply and motor drive designs that are optimized for both the highest efficiency and compact form	Original	PDF	O-220, O-247, 0212/100/in-house/LAH/JE RJK60S5 r2a20118 rjk60s7 RJK60S3DPP-M0 RJK60S7DPN-E0 RJK60S7DPP-E0 RJK60s3dpp RJK60s4dpp-M0