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    RJK60S5

    Abstract: RJK60S5DPK-M0
    Text: Preliminary Datasheet RJK60S5DPK-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0245EJ0300 Rev.3.00 Feb 06, 2012 Features • Low on-resistance RDS on = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching


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