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    RG1J Search Results

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    RG1J Price and Stock

    Littelfuse Inc 504RG1J

    THERM NTC 500KOHM 4140K DO35
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    DigiKey 504RG1J Bulk 250
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    Mouser Electronics 504RG1J 707
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    Newark 504RG1J Bulk 250
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    Ozdisan Elektronik 504RG1J
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    Littelfuse Inc 105RG1J

    THERMISTOR NTC 1MOHM 4140K DO35
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    Littelfuse Inc 104RG1J

    THERM NTC 100KOHM 4140K DO35
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    DigiKey 104RG1J Bulk 1
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    Mouser Electronics 104RG1J
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    Newark 104RG1J Bulk 250
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    TTI 104RG1J Bulk 250
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    Ozdisan Elektronik 104RG1J
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    Samwha Electronics RG1J227M10020PA100

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    Bristol Electronics RG1J227M10020PA100 500 9
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    Quest Components RG1J227M10020PA100 400
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    Others RG1J106M0511PA159

    INSTOCK
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    Chip 1 Exchange RG1J106M0511PA159 1,150
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    RG1J Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RG1J General Semiconductor GLASS PASSIVATED FAST SWITCHING RECTIFIER Original PDF
    RG1J Vishay Fast Sinterglass Diode Original PDF
    RG1J General Instrument Short Form Data 1976 Short Form PDF
    RG1J General Instrument 600 V, 1 A, miniature glass passivated junction fast switching rectifier Scan PDF
    RG1J International Semiconductor RECTIFIER DIODE Scan PDF
    RG1J Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    RG1J Unknown Cross Reference Datasheet Scan PDF
    RG1J Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    RG1J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOD-57

    Abstract: No abstract text available
    Text: RG1J SINTERED GLASS JUNCTION FAST SWITCHING RECTIFIER VOLTAGE: 600V CURRENT: 1.0A FEATURE SOD-57 High temperature metallurgically bonded construction Sintered glass cavity free junction Capability of meeting environmental standard of MIL-S-19500 High temperature soldering guaranteed


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    PDF MIL-S-19500 /10sec/0 OD-57 OD-57 SOD-57

    diode cross reference

    Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
    Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: [email protected] DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS


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    PDF

    BYD74G

    Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
    Text: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any


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    PDF 5KA10 5KA10A 5KA11 5KA11A 5KA12 5KA12A 5KA13 5KA13A 5KA15 5KA15A BYD74G FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z

    rg2m

    Abstract: No abstract text available
    Text: RG2A to RG2M VISHAY Vishay Semiconductors Fast Sinterglass Switching Rectifier Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 1.0 ampere operation at Tamb = 55 °C with no thermal runaway


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    PDF MIL-S-19500 DO-204AP 08-Apr-05 rg2m

    DIODE RG4A

    Abstract: RG4A rg4a diode
    Text: RG4A / B / D / G / J VISHAY Vishay Semiconductors Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Fast switching for high efficiency • 3.0 ampere operation at Tamb = 50 °C with no thermal runaway


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    PDF MIL-STD-750, 18-Jul-08 DIODE RG4A RG4A rg4a diode

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


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    PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


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    PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


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    PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    DIODE RG4A

    Abstract: rg4a diode
    Text: RG4A to RG4J VISHAY Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Fast switching for high efficiency • 3.0 ampere operation at Tamb = 50 °C with no thermal runaway


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    PDF MIL-STD-750, D-74025 28-Jan-03 DIODE RG4A rg4a diode

    TCA780

    Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
    Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP


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    PDF 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G

    RG1G

    Abstract: DO204AP DO-204AP
    Text: RG1A THRU RG1M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere * FEATURES ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed package ♦ Glass passivated cavity-free junction


    Original
    PDF MIL-S-19500 DO-204AP 50mVp-p RG1G DO204AP DO-204AP

    rg1g diode

    Abstract: No abstract text available
    Text: RG1A to RG1M VISHAY Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 1.0 ampere operation at Tamb = 55 °C with no thermal runaway


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    PDF DO-204AP DO-204AP 18-Jul-08 rg1g diode

    BY228-1500

    Abstract: BY448 BYW84 BYW85 RG1J BY228 BYT62 BY458 BYW82 BYW83
    Text: Sinterglass Rectifiers Part No. CrossReference BYW82 BYW83 BYW84 BYW85 BYW86 - Operating Temperature: -65 o C to 160oC Peak Fwd. Surge Current @ 8.3 ms Superimposed Max. Forward Voltage @ 25o C @ Rated Io Max. Reverse Current @ 25oC @ Rated PIV Package PIV V


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    PDF 160oC BYW82 BYW83 BYW84 BYW85 BYW86 5000/Ammo 5000/Reel BYT62 GI1-1200 BY228-1500 BY448 BYW84 BYW85 RG1J BY228 BYT62 BY458 BYW82 BYW83

    byw228

    Abstract: MIL-STD-750 METHOD 2026 1N4949 RG3A DO-204AP BYw22 RG4M 1N4245 1N4249 1N5059
    Text: GLASS PASSIVATED RECTIFIERS 0.2 AMPERE TO 3.0 AMPERES 50 VOLTS TO 1600 VOLTS INTRODUCTION TO GLASS RECTIFIERS The glass passivated rectifier is a hermetically sealed, cavity free, diffused junction rectifier with unsurpassed operating and surge capabilities at high temperature. An extremely pure specially developed glass applied in direct contact with the


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    PDF 1N5415 1N5416 1N5550 1N5417 BYW73 1N5551 1N5552 1N5418 BYW74 1N5419 byw228 MIL-STD-750 METHOD 2026 1N4949 RG3A DO-204AP BYw22 RG4M 1N4245 1N4249 1N5059

    shindengen mr5060

    Abstract: TFK 601 TFK 602 18db6a 18DB8A 18DB2A Philips BZV85C-22 data sheet bzx85c MOTOROLA BYD74G UR1M
    Text: Cross Reference Competitor Part Number Competitor FAGOR Part Number Competitor Part Number Competitor FAGOR Part Number 1.5KA10 1.5KA10A 1.5KA11 1.5KA11A 1.5KA12 1.5KA12A 1.5KA13 1.5KA13A 1.5KA15 1.5KA15A 1.5KA16 1.5KA16A 1.5KA18 1.5KA18A 1.5KA20 1.5KA20A


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    PDF 5KA10 5KA10A 5KA11 5KA11A 5KA12 5KA12A 5KA13 5KA13A 5KA15 5KA15A shindengen mr5060 TFK 601 TFK 602 18db6a 18DB8A 18DB2A Philips BZV85C-22 data sheet bzx85c MOTOROLA BYD74G UR1M

    DO-204AP

    Abstract: No abstract text available
    Text: RG1A to RG1M VISHAY Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 1.0 ampere operation at Tamb = 55 °C with no thermal runaway


    Original
    PDF DO-204AP 08-Apr-05 DO-204AP

    DIODE RG4A

    Abstract: No abstract text available
    Text: RG4A / B / D / G / J VISHAY Vishay Semiconductors Fast Sinterglass Diode Features • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Fast switching for high efficiency • 3.0 ampere operation at Tamb = 50 °C with no thermal runaway


    Original
    PDF MIL-STD-750, 08-Apr-05 DIODE RG4A

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan
    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    DO-204AP

    Abstract: DO204AP Package RG1 Series
    Text: 3890137 GENL INSTR, POWER 3flT0137 000E435 h ^ T~OZ~ 3 ÿ :^ R G 1 S E R I E S -¿it , INIATURE G LASS PASSIVATED JUNCTION FAST SW ITCHING'RECTIFIER VOLTAGE RANGE SO to 1000 Volts CU RR EN T 1.0 Ampere DQ-204AP FEATURES • High temperature metallurgically bonded — no com ­


    OCR Scan
    PDF 1G137 000E435 DO-204AP MIL-STD-19500 000243b DO204AP Package RG1 Series

    Untitled

    Abstract: No abstract text available
    Text: RG1ATHRU RG1M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1 . 0 Ampere FEATURES ♦ High temperature metallurgical^ bonded construction ♦ Hermetically sealed package ♦ Glass passivated cavity-free junction


    OCR Scan
    PDF MIL-S-19500 D0204AP MIL-STD-750,

    MDA2501

    Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
    Text: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090


    OCR Scan
    PDF 1N5817 1N5618 1N5818 1N5819 1N5820 1N5821 MDA2501 pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1