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DO-204AP Abstract: DO204AP Package RG1 Series Text: 3890137 GENL INSTR, POWER 3flT0137 000E435 h ^ T~OZ~ 3 ÿ :^ R G 1 S E R I E S -¿it , INIATURE G LASS PASSIVATED JUNCTION FAST SW ITCHING'RECTIFIER VOLTAGE RANGE SO to 1000 Volts CU RR EN T 1.0 Ampere DQ-204AP FEATURES • High temperature metallurgically bonded — no com	OCR Scan	PDF	1G137 000E435 DO-204AP MIL-STD-19500 000243b DO204AP Package RG1 Series
Untitled Abstract: No abstract text available Text: dF\|3û1G137 000E435 h 3890137 GENL INSTR, POWER T'-0 3- 3 R uG 1a«SyEER I EE S n ni « S t INIATURE GLASS PASSIVATED JUNCTION FAST sWlT&HING ÌRECTIFIER INSTIm m VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere D0-204AP FEA TU R ES • High tem perature m etallurglcally bonded — no com	OCR Scan	PDF	1G137 000E435 D0-204AP DE13610137
b0615 Abstract: B0180 BD139 2N5192 BD441 2N4923 2N60 2N4918 2N4919 bd679, bd680 2N4921 Text: o Top View TYPE NO. NPN PNP ic PD A (W) MAX BVCBO BVCEO <V) (V) hFE @ Ic (mA) Bottom View VCE(SAT) @ IC (V) (A) fT (MHz) MIN MIN MIN MAX 2N4921 2N4918 1.0 30 40 40 30 150 2N4922 2N4919 1.0 30 60 60 30 150 500 0.6 1.0 3.0 2N4923 2N4920 1.0 30 80 80 30 150	OCR Scan	PDF	O-126 2N4921 2N4918 2N4922 2N4919 2N4923 2N4920 2N5190 2N5193 2N5191 b0615 B0180 BD139 2N5192 BD441 2N60 bd679, bd680
Untitled Abstract: No abstract text available Text: 3 2 K x 8 mosaic SRAM MSM832-55/70/85/10 Issue 4.2 : JUNE 1996 semiconductor, inc. 32,768 x 8 CMOS High Speed Static RAM Description Features The MSM832 is a high speed Static RAM organ ised as 32K x 8 available with access times of 5 5 ,7 0 ,8 5 or 100 ns. The device is available in	OCR Scan	PDF	MSM832-55/70/85/10 MSM832 MIL-STD-883. MSM832SLMB-70 MIL-STD-883