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Infineon Technologies AG Q62702F1590
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Q62702F1590 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Q62702-F1590		Siemens	NPN Silicon RF Transistor (For medium power amplifiers)		Original	PDF

Q62702F1590 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Q62702-F1590 Abstract: 5198 transistor equivalent Transistor C 5198 VPS05605 transistor BI 342 746 Text: SIEGET 25 BFP 450 NPN Silicon RF Transistor 3 • For medium power amplifiers 4 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain G ma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metalization for high reliability	Original	PDF	VPS05605 Q62702-F1590 OT-343 50Ohm -j100 Sep-09-1998 Q62702-F1590 5198 transistor equivalent Transistor C 5198 VPS05605 transistor BI 342 746
a06 transistor Abstract: Code "A06" RF Semiconductor transistor A06 f 1405 zs BFP450 A06 NPN Siemens 1713 Q62702-F1590 marking A06 SIEMENS BFP450 Text: SIEGET 25 BFP450 NPN Silicon RF Transistor l For Medium Power Amplifiers l Compression Point P = +19 dBm at 1.8 GHz -1dB l l l Maximum Available Gain Gma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency fT = 24 GHz Gold metalization for high reliability	Original	PDF	BFP450 25-Line Transistor25 OT343 Q62702-F1590 a06 transistor Code "A06" RF Semiconductor transistor A06 f 1405 zs BFP450 A06 NPN Siemens 1713 Q62702-F1590 marking A06 SIEMENS BFP450
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	PDF	B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Marking ANs Abstract: Transistor C 5198 b 514 transistor BFP450 Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability	OCR Scan	PDF	Q62702-F1590 OT-343 Marking ANs Transistor C 5198 b 514 transistor BFP450
marking 17 sot343 Abstract: Q62702F1590 BFP450 Text: SIEMENS NPN Silicon RF G rou nded E m itter BFP 405 BFP 420 BFP 450 T ran sisto r Line • • • • • Grounded emitter configuration Very high transition frequency Gold metalization for high reliability Small outline SOT343 package BFP 405 for low current applications	OCR Scan	PDF	OT343 Q62702-F1592 Q62702-F1591 Q62702-F1590 marking 17 sot343 Q62702F1590 BFP450
BDP 284 Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529 Text: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05	OCR Scan	PDF	3-03W 4-03W 5-03W Q62702-A829 Q62702-A859 Q62702-A950 Q62702-A952 Q62702-A608 Q62702-A718 Q62702-A687 BDP 284 BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
a06 transistor Abstract: CHIP T503 S BFP450 siemens BFP450 Text: S IE M E N S SIEGET 25 BFP450 NPN Silicon RF Transistor • • • • • For Medium Power Amplifiers Compression Point P.1dB = +19 dBm at 1.8 GHz Maximum Available Gain G ma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency f j = 24 GHz	OCR Scan	PDF	25-Line Transistor25 BFP450 Q62702-F1590 OT343 a06 transistor CHIP T503 S BFP450 siemens BFP450
Untitled Abstract: No abstract text available Text: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P.1dB = +19dB m at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f j = 24 GHz • Gold metalization for high reliability	OCR Scan	PDF	Q62702-F1590 OT-343 2200b IS21I2 fl235bQS 0122QQ7 0235b05