c2611
Abstract: BD437 8229 2SB649A 2SD669A 2SB649 2SB772 2SC3417 2SD882 BD238
Text: TO-126 PACKAGE MX MICROELECTRONICS ● Applied for power drive power switch . TYPE 2SB772 2SD882 2SB649 2SB649A 2SD669A 2SD669A 2SC3417 BD437 BD238 BD329 BD330 NPN PD OR *Tc= Ic PNP 25℃ mW (mA) PNP NPN PNP PNP NPN NPN NPN NPN PNP NPN PNP ICBO VCBO VCEO * ICEO
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O-126
2SB772
2SD882
2SB649
2SB649A
2SD669A
2SC3417
BD437
BD238
c2611
BD437
8229
2SB649A
2SD669A
2SB649
2SB772
2SC3417
2SD882
BD238
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BU808DFH
Abstract: ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH
Text: Power Bipolar Transistors Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions P/N NPN PNP STX112 STBV68 STBV45 STBV42 STBV32 STX13003 100 400 400 400 400 400 P/N NPN PNP BSS44 BFX34 2N5153 2N5681 2N5682 2N5415 BUY49S 2N3440 2N5416
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STX112
STBV68
STBV45
STBV42
STBV32
STX13003
BSS44
BFX34
2N5153
2N5681
BU808DFH
ST2310DHI
BU808DFh equivalent
BU808DFI equivalent
BU808DFh bu808dfi
BUX98APW
BUV27
BD911/BD912
electronic ballast MJE13007
ST1803DFH
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2SB507
Abstract: 2SD313 416W
Text: SavantIC Semiconductor Product Specification 2SB507 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD313 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier
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2SB507
O-220C
2SD313
O-220)
2SB507
2SD313
416W
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D-PAK package
Abstract: STA723D STC722D sta723
Text: STA723D Semiconductor PNP Silicon Transistor Description • General purpose amplifier • D-PAK for surface mount applications Features • PC Collector dissipation =15W • Low speed switching applications • Complementary pair with STC722D Ordering Information
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STA723D
STC722D
STA723
KST-D001-001
-500mA
-200mA
-500mA,
D-PAK package
STA723D
STC722D
sta723
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STA723D
Abstract: STC722D
Text: STA723D Semiconductor PNP Silicon Transistor Description PIN Connection • General purpose amplifier • D-PAK for surface mount applications Features • PC Collector dissipation =15W • Low speed switching applications • Complementary pair with STC722D
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STA723D
STC722D
O-252
STA723
KSD-T6O018-000
STA723D
STC722D
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2SB507
Abstract: 2SD313 to25W 416W
Text: SavantIC Semiconductor Product Specification 2SB507 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD313 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier
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2SB507
O-220C
2SD313
O-220)
2SB507
2SD313
to25W
416W
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TO220C
Abstract: 2SB507 2SD313
Text: JMnic Product Specification 2SB507 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD313 ・Low collector saturation voltage APPLICATIONS ・Designed for the output stage of 15W to 25W AF power amplifier PINNING
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2SB507
O-220C
2SD313
O-220)
TO220C
2SB507
2SD313
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2SB507
Abstract: 2SD313
Text: Inchange Semiconductor Product Specification 2SB507 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD313 ・Low collector saturation voltage APPLICATIONS ・Designed for the output stage of 15W to 25W AF power amplifier
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2SB507
O-220C
2SD313
O-220)
2SB507
2SD313
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STA723D
Abstract: STC722D sta723 transistor marking c y
Text: STA723D PNP Silicon Transistor Description PIN Connection • General purpose amplifier • D-PAK for surface mount applications Features • PC Collector dissipation =15W • Low speed switching applications • Complementary pair with STC722D TO-252 Ordering Information
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STA723D
STC722D
O-252
STA723
KSD-T6O018-001
STA723D
STC722D
sta723
transistor marking c y
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2SA748
Abstract: transistor 2SC1398 2SC1398 equivalent 2SC1398
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA748 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·Large Power Dissipation: PC= 15W@ TC= 25℃ ·Complement to Type 2SC1398 APPLICATIONS ·Designed for medium power amplifier applications.
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2SA748
2SC1398
-55r-Emitter
-500mA;
2SA748
transistor 2SC1398
2SC1398 equivalent
2SC1398
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2SA652
Abstract: TV power transistor datasheet
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA652 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min.) ·Contunuous Collector Current-IC= -1A ·Power Dissipation-PC= 15W @TC= 25℃ APPLICATIONS ·Designed for low frequency power amplifier color TV vertical
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2SA652
-100V
15PARAMETER
-50mA
-150V;
2SA652
TV power transistor datasheet
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2SA653
Abstract: TV power transistor datasheet
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA653 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·Contunuous Collector Current-IC= -1A ·Power Dissipation-PC= 15W @TC= 25℃ APPLICATIONS ·Designed for low frequency power amplifier color TV vertical
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2SA653
-120V
15PARAMETER
-50mA
-150V;
2SA653
TV power transistor datasheet
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Untitled
Abstract: No abstract text available
Text: STA723D PNP Silicon Transistor Description PIN Connection • General purpose am plifier • D- PAK for surface m ount applicat ions Features • PC Collect or dissipat ion = 15W • Low speed swit ching applicat ions • Com plem ent ary pair wit h STC722D
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STA723D
STC722D
O-252
STA723
KSD-T6O018-001
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NTE354
Abstract: No abstract text available
Text: NTE354 Silicon PNP Transistor RF Power Output PO = 15W @ 175MHz Description: The NTE354 is designed for 12.5 Volt VHF large−signal amplifier applications required in military and industrial equipment operating to 250MHz. Features: D Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with
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NTE354
175MHz
NTE354
250MHz.
500mA
100kHz
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NTE2522
Abstract: NTE2523
Text: NTE2522 NPN & NTE2523 (PNP) Silicon Complementary Transistors High Speed Switch Features: D High Current Capacity D High Collector−Emitter Saturation Voltage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO
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NTE2522
NTE2523
NTE2523
200mA
NTE2522
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NTE2522
Abstract: NTE2523
Text: NTE2522 NPN & NTE2523 (PNP) Silicon Complementary Transistors High Speed Switch TO251 Features: D High Current Capacity D High Collector−Emitter Saturation Voltage D TO251 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
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NTE2522
NTE2523
200mA
NTE2522
NTE2523
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TRANSISTOR 2SB507
Abstract: TRANSISTOR AF 416 pnp 2SD313 E 2sd313 equivalent 2SB507 2sd313 applications 2SD313
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB507 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= -1.0V(Max) @IC= -2.0A ·Complement to Type 2SD313
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2SB507
2SD313
TRANSISTOR 2SB507
TRANSISTOR AF 416 pnp
2SD313 E
2sd313 equivalent
2SB507
2sd313 applications
2SD313
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Untitled
Abstract: No abstract text available
Text: NTE2528 NPN & NTE2529 (PNP) Silicon Complementary Transistors High Voltage Switch Features: D High Voltage and High Current Capacity D Fast Switching Time Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
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NTE2528
NTE2529
10IB1
10IB2
700mA,
NTE2529,
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transistor 160v 1.5a pnp
Abstract: NTE2528 NTE2529
Text: NTE2528 NPN & NTE2529 (PNP) Silicon Complementary Transistors High Voltage Switch Features: D High Voltage and High Current Capacity D Fast Switching Time Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
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NTE2528
NTE2529
10IB1
-10IB2
700mA,
NTE2529,
transistor 160v 1.5a pnp
NTE2528
NTE2529
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BF721T1/D SEMICONDUCTOR TECHNICAL DATA BF721T1 PNP Silicon Transistor Motorola Preferred Device COLLECTOR 2,4 PNP SILICON TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Symbol Value Unit Collector-Em itter Voltage Rating
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BF721T1/D
BF721T1
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2SA1009
Abstract: nec 2sa1009 2SA1009A "Silicon Power Transistors"
Text: PNP SILICON POWER TRANSISTORS 2 D ESCRIPTION S A 1 9 . 2 S A 1 9 A The 2SA1009, 2SA1009A are PNP triple diffused transistors de signed for switching regulator, DC-DC converter and high frequency in m illim e te rs inches power amplifier application. FEATURES
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2SA1009
2SA1009A
2SA1009,
2SA1009A
2SA1009
nec 2sa1009
"Silicon Power Transistors"
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APC UPS CIRCUIT DIAGRAM rs 1500
Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO
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AF106
AF106
APC UPS CIRCUIT DIAGRAM rs 1500
APC UPS es 500 CIRCUIT DIAGRAM
APC UPS 650 CIRCUIT DIAGRAM
schematic diagram APC back ups XS 1000
TAA550
APC UPS CIRCUIT DIAGRAM
UPS APC rs 1000 CIRCUIT diagram
UPS APC rs 800 CIRCUIT diagram
APC Back ES 500 UPS circuit diagram
CIRCUIT DIAGRAM APC UPS 700
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2SD313
Abstract: 2SB507 transistor 2sd313
Text: ÆàMOS PEC NPN SILICON POWER TRANSISTORS .designed for the output stage of 15W to 25W AF power amplifier FEA TU RES: * Low Collector-Emitter Saturation Voltage VcE satf 1 OV(Max @ I c=2.0A,Ib=0.2A * DC Current Gain hFE= 40-320@lc= 1.0A * Complementary to PNP 2SB507
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2SB507
2SD313
2SD313
2SB507
transistor 2sd313
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2SB507
Abstract: 2SB507 npn transistor 2SD313 TRANSISTOR AF 416 pnp
Text: ÆàMOS PEC PNP SILICON POWER TRANSISTORS .designed for the output stage of 15W to 25W AF power amplifier FEATURES: * Low Collector-Emitter Saturation Voltage v CE sat r 1 OV(Max @ I c=2.0A,Ib=0.2A * DC Current Gain hFE= 40-320@lc= 1.0A * Complementary to NPN 2SD313
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2SD313
2SB507
2SB507 npn transistor
2SD313
TRANSISTOR AF 416 pnp
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