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    2SB649A Search Results

    2SB649A Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB649A Hitachi Semiconductor Silicon PNP Transistor Original PDF
    2SB649A Kexin PNP Silicon Transistor Original PDF
    2SB649A Renesas Technology Silicon PNP Epitaxial Original PDF
    2SB649A Transys Electronics TO-126C Plastic-Encapsulated Transistors Original PDF
    2SB649A TY Semiconductor PNP Silicon Transistor - TO-126 Original PDF
    2SB649A Weitron PNP Epitaxial Planar Transistors Original PDF
    2SB649A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB649A Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB649A Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB649A Unknown Scan PDF
    2SB649A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB649A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB649A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB649A Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB649A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB649A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB649A Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB649A Unknown Cross Reference Datasheet Scan PDF
    2SB649AB Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB649AC Various Russian Datasheets Transistor Original PDF

    2SB649A Datasheets Context Search

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    2SB649

    Abstract: 669a 2SB649A
    Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB649 2SB649A DESCRIPTION •With TO-126 package ·Complement to type 2SD669/669A ·High breakdown voltage VCEO:-120/-160V ·High current -1.5A ·Low saturation voltage,excellent hFE linearity


    Original     		PDF 2SB649 2SB649A O-126 2SD669/669A -120/-160V 2SB649 -160V; 669a 2SB649A

    transistor 649A

    Abstract: 649A transistor 2sb649 2SB649 2SB649A TO 126 FEATURES JIANGSU CHANGJIANG TO-126
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126 FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF O-126 2SB649/2SB649A 2SD669/A 2SB649 2SB649A -160V -10mA -150mA transistor 649A 649A transistor 2sb649 2SB649 2SB649A TO 126 FEATURES JIANGSU CHANGJIANG TO-126

    transistor 649A

    Abstract: 2SB649 2SB649A 649a
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126C FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF O-126C 2SB649/2SB649A 2SD669/A 2SB649 2SB649A -160V -10mA -150mA transistor 649A 2SB649 2SB649A 649a

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-126 2SB649/2SB649A 2SD669/A 2SB649 2SB649A -160V -10mA -150mA

    transistor 2sb649

    Abstract: 2SB649A 2SB649
    Text: 2SB649/2SB649A 2SB649/2SB649A TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: -1.5 A Collector-base voltage V V(BR)CBO : -180 Operating and storage junction temperature range 2. COLLECTOR 3. BASE


    Original     		PDF 2SB649/2SB649A O-126C 2SB649 2SB649A -10mA, I-10mA, -160V, -150mA transistor 2sb649 2SB649A 2SB649

    Untitled

    Abstract: No abstract text available
    Text: Transistor IC Transistors IC Transistor DIP SMDType Type Type DIP SMD Type Product specification 2SB649A Features Collector-Emitter Voltage :-160V Collector Current :-1.5A 1 Emitter 2 Collector 3 Base Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage


    Original     		PDF 2SB649A -160V -55to -10mA, -600mA -50mA -150mA -500mA 150mA

    2sd649

    Abstract: transistor 649A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126C FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF O-126C 2SB649/2SB649A 2SD669/A 2SB649 2SB649A -160V -10mA -150mA 2sd649 transistor 649A

    2Sd649A

    Abstract: transistor 649A
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO-126C FEATURES Power amplifier applications MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage


    Original     		PDF O-126C 2SB649/2SB649A O-126C 2SB649 2SB649A -10mA -160V -150mA 2Sd649A transistor 649A

    2SB649A

    Abstract: 2SB649
    Text: Transys Electronics L I M I T E D TO-126C Plastic-Encapsulated Transistors 2SB649/2SB649A TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current -1.5 A ICM: Collector-base voltage V V(BR)CBO : -180 Operating and storage junction temperature range


    Original     		PDF O-126C 2SB649/2SB649A O-126C 2SB649 2SB649A -10mA, -160V, -150mA 2SB649A 2SB649

    to-126 transistor

    Abstract: transistor C 2290 2sb649 TO126 transistor 2SB649A TO126 transistor 1060 Transistor TO-126
    Text: 2SB649/2SB649A PNP TO-126 Transistor TO-126 1. EMITTER 2.500 1.100 2.900 1.500 7.400 7.800 2. COLLECTOR 3.900 4.100 3.000 3. BASE 3.200 3 10.60 0 11.00 0 2 1 0.000 0.300 Features 2.100 2.300 Low frequency power amplifier complementary pair with 2SD669/A 1.170


    Original     		PDF 2SB649/2SB649A O-126 O-126 2SD669/A 2SB649 2SB649A -10mA -160V to-126 transistor transistor C 2290 TO126 transistor TO126 transistor 1060 Transistor TO-126

    2SB669

    Abstract: 2SB649AL 2SB669A 2SB649 2SB649A 126-C
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 SOT-89 APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-126 1 TO-126C 1 TO-92 *Pb-free plating product number: 2SB649L/2SB649AL


    Original     		PDF 2SB649/A OT-89 2SB669/A O-126 O-126C 2SB649L/2SB649AL 2SB649-x-AB3-R 2SB649L-x-AB3-R 2SB649-x-T6C-K 2SB649L-x-T6C-K 2SB669 2SB649AL 2SB669A 2SB649 2SB649A 126-C

    2SB649A

    Abstract: 2sb649 2SB649A HITACHI DSA003644
    Text: 2SB649, 2SB649A Silicon PNP Epitaxial ADE-208-856 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SD669/A Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 2SB649, 2SB649A Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SB649, 2SB649A ADE-208-856 2SD669/A O-126 2SB649 2SB649A 2sb649 2SB649A HITACHI DSA003644

    2SB649A

    Abstract: 2SB649 equivalent 2SB6490 2SB649
    Text: 2SB649/2SB649A PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126C 3.2±0.2 8.0±0.2 FEATURES 2.0±0.2 4.14±0.1 Power smplifier applications O3.2±0.1 O2.8±0.1 11.0±0.2


    Original     		PDF 2SB649/2SB649A O-126C 2SB649 2SB649A 01-Jun-2002 2SB649A 2SB649 equivalent 2SB6490 2SB649

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 SOT-89 APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-126 1 TO-92 *Pb-free plating product number: 2SB649L/2SB649AL


    Original     		PDF 2SB649/A OT-89 2SB669/A O-126 2SB649L/2SB649AL 2SB649-x-AB3-R 2SB649L-x-AB3-R 2SB649-x-T60-K 2SB649L-x-T60-K 2SB649-x-T92-B

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L 2SB649/2SB649A TRANSISTOR PNP 1. EMITTER FEATURES z High Collector Current z High Collector-Emitter Breakdown Voltage z Low Saturation Voltage 2. COLLECTOR


    Original     		PDF O-92L 2SB649/2SB649A 2SB649 2SB649A -160V -150mA -500mA -500mA

    2SB649A

    Abstract: TO-126C 2SB649
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO-126C FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current -1.5 A ICM: Collector-base voltage V V(BR)CBO : -180


    Original     		PDF O-126C 2SB649/2SB649A O-126C 2SB649 2SB649A -10mA, -160V, -150mA 2SB649A TO-126C 2SB649

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR PNP TO- 126C FEATURES Low frequency power amplifier complementary pair with 2SD669/A 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF O-126C 2SB649/2SB649A 2SD669/A 2SB649 2SB649A -160V -10mA -150mA

    2SB649A

    Abstract: 2SB649 equivalent 2SB649
    Text: 2SB649/2SB649A PNP Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR 3. BASE P b Lead Pb -Free 1 2 3 TO-126C ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Symbol 2SB649 2SB649A Unit Collector-Emitter Voltage VCBO Collector-Base Voltage VCEO Emitter-Base Voltage


    Original     		PDF 2SB649/2SB649A O-126C 2SB649 2SB649A 21-Mar-06 O-126C 2SB649A 2SB649 equivalent 2SB649

    2SA1015

    Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
    Text: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624


    OCR Scan     		PDF 2SB1037 2SB649A 2SB1186A 2SA1306A 2SB1186B 2SB548 2SB1314 2SA1783 2SA1015 2SA733 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A

    Untitled

    Abstract: No abstract text available
    Text: 2B649,2SB649A Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SD669/A Outline TO -126 MOD I 1. Em itter 2. Collector 3. Base 2B649, 2SB649A Absolute Maximum Ratings Ta = 25 °C Ratings Item Symbol 2SB649 2SB649A


    OCR Scan     		PDF 2B649 2SB649A 2SD669/A 2B649, 2SB649

    b649a

    Abstract: B649 2B649 2SD66 2SB649A
    Text: 2B649,2SB649A Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary pair with 2SD669/A Outline T O -126 MOD I 1. Em itter 2. Collector 3. Base 2B649, 2SB649A Absolute Maximum Ratings Ta = 25 °C Ratings Item Symbol 2SB649


    OCR Scan     		PDF 2B649 2SB649A 2SD669/A 2B649, 2SB649A 2SB649 D-85622 b649a B649 2SD66

    sb649a

    Abstract: Sb649
    Text: HITACHI 2SB649, 2SB649A S IU C O N PNP EPITAXIAL LOW FREQ UENC Y'PO W ER AMPLlFiER CO M PLEM ENTARY PAIR W ITH 2SD669/A 3 ’-’ ? , JXOiO.S. 15*5*0.5 . . „ 1 7 n h 7 . ? : -M J ¿ •'s • •J,in; i< /-vS*> ^ = ¿ 3 ! . . . . i . E m iiK ?


    OCR Scan     		PDF 2SB649, 2SB649A 2SD669/A O-126 SB649A il100 Sb649

    2SB649

    Abstract: 2SB649A u02a
    Text: HITACHI 2SB649, 2SB649A SILICON PNP EPITAXIAL LOW FREQ UEN CY PO W ER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD669/A 1. Em illcr 2. Collector .1. 03« C iiiì?PMQn*t in Him) (JE D E C TO-126 MOD.) • A BSO LU T E MAXIMUM RATINGS (Ta=25°C) Iiem Symbol 2SB649


    OCR Scan     		PDF 2SB649, 2SB649A 2SD669/A O-126 2SB649 2SB649A u02a

    2Sd649A

    Abstract: 0038a 2sb649a
    Text: PJB649A PNP Epitaxial Silicon Transistor • • Complementary pair with PJD669A *Value at Tc $ 25°C TO-126 ABSOLUTE M AXIM U M RATINGS TA = 25 °C Item Symbol 2SB649A Unit Collector to base voltage V CBO -180 V Collector to emitter voltage V CEO -160 V


    OCR Scan     		PDF PJB649A PJD669A O-126 2SB649A 2SD649A 0038a