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    2SA652 Search Results

    2SA652 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA652 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SA652 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SA652 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SA652 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA652 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA652 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SA652 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA652 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA652 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA652 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA652 Unknown Transistor Replacements Scan PDF
    2SA652 Unknown Cross Reference Datasheet Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: , fJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA652 DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-100V(Min.) • Contunuous Collector Current lc= -1A


    Original     		PDF 2SA652 -100V -50mA -150V

    2SA652

    Abstract: TV power transistor datasheet
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA652 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min.) ·Contunuous Collector Current-IC= -1A ·Power Dissipation-PC= 15W @TC= 25℃ APPLICATIONS ·Designed for low frequency power amplifier color TV vertical


    Original     		PDF 2SA652 -100V 15PARAMETER -50mA -150V; 2SA652 TV power transistor datasheet

    2SA616

    Abstract: 2sa620 2SC1014 2SC1079 2SA688 2SC634A 2SA678 2SC1013 2SC1008A 2SA628A
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) PartNumber VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob ºñ°í (V) (V) (mA) (mW) (ºC) VCE(V) Ic(mA) (MHz) (pF) 2SA603 -60 -8 -200 300 150 140 -1 -10 250* 7.5 2SC943 2SA604


    Original     		PDF 2SA603 2SC943 2SA604 2SA605 2SA606 2SC959 2SA607 2SC960 2SA608 2SA609 2SA616 2sa620 2SC1014 2SC1079 2SA688 2SC634A 2SA678 2SC1013 2SC1008A 2SA628A

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


    Original     		PDF 2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020

    2SA614

    Abstract: 2SA616 2sc113 STC5204
    Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF

    2sa648 transistor

    Abstract: usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. PT6905A PT6905B PT6905C 100msa 100m5a MM2261 MM2262 MM2263 2sa648 transistor usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538

    D634 transistor

    Abstract: 2N907 PNP 2sa648 transistor STC5202 2SA614 2SA616 2SA653 2P424 SE9573 B0536
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


    OCR Scan     		PDF NPN110. USAF520ES070M 2N1508 50M5A 13On0 32On0 600di 2N1509 D634 transistor 2N907 PNP 2sa648 transistor STC5202 2SA614 2SA616 2SA653 2P424 SE9573 B0536

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    STC5610

    Abstract: B0536 2n3408 2SA614 2SA616 BD272 BD436A STP60S STC5204 D634
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


    OCR Scan     		PDF NPN110. MT10a STC5520/I STC5521/I STC5522/I STC5523/I STC5524/I 2P389 2P424 STC5610 B0536 2n3408 2SA614 2SA616 BD272 BD436A STP60S STC5204 D634

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931