PHB6N60E
Abstract: PHP3N60 PHP6N60E
Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP6N60E, PHB6N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance
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PHP6N60E,
PHB6N60E
PHP6N60E
O220AB)
PHB6N60E
PHP3N60
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PHB6N60E
Abstract: PHP3N60 PHP6N60E
Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP6N60E, PHB6N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance
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PHP6N60E,
PHB6N60E
PHP6N60E
O220AB)
PHB6N60E
PHP3N60
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FREDFET
Abstract: PHP6N60 BUK457-500B PHB8ND50E PHP8N50 PHP8ND50E PHW8ND50E
Text: Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHP8ND50E,
PHB8ND50E,
PHW8ND50E
FREDFET
PHP6N60
BUK457-500B
PHB8ND50E
PHP8N50
PHP8ND50E
PHW8ND50E
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BUK457-600B
Abstract: PHP6N60 PHW7N60
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling
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OT429
PHW7N60
BUK457-600B
PHP6N60
PHW7N60
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PHP6N60
Abstract: 106AG BUK457-400B PHB10N40E PHP10N40 PHP10N40E PHW10N40E
Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP10N40E, PHB10N40E, PHW10N40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHP10N40E,
PHB10N40E,
PHW10N40E
PHP10N40E
O220AB)
PHW10N4ion
PHP6N60
106AG
BUK457-400B
PHB10N40E
PHP10N40
PHW10N40E
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PHP3N60
Abstract: PHP6N60E PHX6N60E
Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHX6N60E FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package
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PHX6N60E
OT186A
PHP3N60
PHP6N60E
PHX6N60E
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PHP2N60
Abstract: PHP6N60E
Text: Philips Semiconductors Product specification -PowerMOS transistor PHP2N60 -
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PHP2N60
PHP2N60
PHP6N60E
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PCA1318P
Abstract: philips Pca1318p tda8369 TEA5713 pca1318 ON4801 92112 eeprom on4800 ON4836 eeprom 92112
Text: PRODUCT DISCONTINUATION DN42 NOTICE December 31, 1999 CONTRACTS DEPT. NOTE NEW CODING DISCONTINUATION TYPE CODE T= Type number fully withdrawn N= Packing option ONLY withdrawn SOURCE CODE C = Customer specific product M = Multi source product S = Sole source product
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DN-42
REPLACec-99
30-Jun-00
PCA1318P
philips Pca1318p
tda8369
TEA5713
pca1318
ON4801
92112 eeprom
on4800
ON4836
eeprom 92112
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PHP6N60
Abstract: BUK457-400B PHB10N40E PHP10N40 PHP10N40E PHW10N40E
Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP10N40E, PHB10N40E, PHW10N40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHP10N40E,
PHB10N40E,
PHW10N40E
PHP10N40E
O220AB)
PHW10N4n
PHP6N60
BUK457-400B
PHB10N40E
PHP10N40
PHW10N40E
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PHP8N50E
Abstract: BUK457-500B PHB8N50E PHP6N60 PHP8N50 PHW8N50E
Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP8N50E, PHB8N50E, PHW8N50E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHP8N50E,
PHB8N50E,
PHW8N50E
PHP8N50E
O220AB)
PHW8N50E
BUK457-500B
PHB8N50E
PHP6N60
PHP8N50
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BUK457-600B
Abstract: PHB7N60E PHP6N60 PHP7N60E PHW7N60E
Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP7N60E, PHB7N60E, PHW7N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHP7N60E,
PHB7N60E,
PHW7N60E
PHP7N60E
O220AB)
PHW7N60E
BUK457-600B
PHB7N60E
PHP6N60
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors PHP6N60E, PHB6N60E Avalanche energy FEATURES • • • • • QUICK REFERENCE DATA SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics
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PHP6N60E,
PHB6N60E
PHP6N60E
T0220AB)
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1117 S Transistor
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP6N60E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable
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PHP6N60E
PHX4N60E
-SOT186A
1117 S Transistor
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP6N60E GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL N-channe! enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable
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PHP6N60E
PHX4N60E
OT186A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP6N60E QUICK REFERENCE DATA SYMBOL PARAMETER N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable
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PHP6N60E
T0220AB
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP6N60E, PHB6N60E SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance
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PHP6N60E,
PHB6N60E
PHP6N60E
T0220AB)
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transistor iqr
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification PowerMOS transistor GEN ER AL DESCRIPTION PHP6N60E QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and
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PHP6N60E
43ffiS^
T0220AB
transistor iqr
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buk7530-55
Abstract: mosfet-n SOT166 TOPFET buk7530
Text: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263
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56-800A
BUK446-800A
BUK456-800B
BUK446-800B
BUK454-800A
BUK444-800A
BUK454-800B
BUK444-800B
BUK456-1000B
BUK446-1000B
buk7530-55
mosfet-n
SOT166
TOPFET
buk7530
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buk455
Abstract: BUK445-100A BUK444 50SP BUK854-500IS BUK854-500 BUK454
Text: Philips Semiconductors Replacement List REPLACED / WITHDRAWN TYPES The following type numbers were in the previous issue of this handbook, but are not in the current version: TYPE NUMBER BUK105-50L REPLACED BY REASON FOR DELETION see BUK104/106-50L BUK105-50LP
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BUK105-50L
BUK105-50LP
BUK105-50S
BUK105-50SP
BUK444-400B
BUK444-500B
BUK444-600B
BUK445-400B
BUK445-500B
BUK445-600B
buk455
BUK445-100A
BUK444
50SP
BUK854-500IS
BUK854-500
BUK454
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T0-220AB
Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET
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BUK100-50DL
BUK100-50GL
BUK100-50GS
BUK101-50DL
BUK101-50GL
BUK101-50GS
BUK102-50DL
BUK102-50GL
BUK102-50GS
BUK104-50L
T0-220AB
PHILIPS MOSFET igbt
mosfet switch
BUK866 4001z
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BUK444-200
Abstract: 100a mosfet Philips Semiconductors Selection Guide BUK454-60H BUK108-50DL BUK102-50GL BUk2 BUK44 BUK9630-55 BUK9570-55
Text: Philips Semiconductors TOPFETs Selection Guide VDs Rdsion lD Id V) (fl) (A) (A) Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50LP TOPFET SOT263-O1 50 0.028 25 50 125 BUK116-50L TOPFET SOT426 50
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7-800B
BUK446-800B
BUK454-800A
BUK444-800A
BUK454-800B
BUK444-800B
BUK456-1OOOB
BUK446-1000B
T0220AB
OT186
BUK444-200
100a mosfet
Philips Semiconductors Selection Guide
BUK454-60H
BUK108-50DL
BUK102-50GL
BUk2
BUK44
BUK9630-55
BUK9570-55
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837 mosfet
Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET
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BUK100-50DL
BUK100-50GL
BUK100-50GS
BUK101-50DL
BUK101-50GL
BUK101-50GS
BUK102-50DL
BUK102-50GL
BUK102-50GS
BUK104-50L
837 mosfet
912 MOSFET
T0-220AB
PHILIPS MOSFET igbt
BUK108-50DL
50SP
200b
mosfet
MOSFET 1053
mosfet handbook
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BUK445-100A
Abstract: BUK445-600B
Text: Philips Semiconductors Replacement List REPLACED / WITHDRAWN TYPES The following type numbers were in the previous issue of this handbook, but are not in the current version: TYPE NUMBER REPLACED BY BUK105-50L see BUK104/106-50L BUK105-50LP see BUK104/106-50LP
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BUK105-50L
BUK105-50LP
BUK105-50S
BUK105-50SP
BUK444-400B
BUK444-500B
BUK444-600B
BUK445-400B
BUK445-500B
BUK445-600B
BUK445-100A
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