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    PHP10N40 Search Results

    PHP10N40 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    PHP10N40 Philips Semiconductors PowerMOS transistor Original PDF
    PHP10N40E Philips Semiconductors PowerMOS transistors Avalanche energy rated Original PDF
    PHP10N40E Philips Semiconductors 400 V, power MOS transistor avalanche energy rated Original PDF
    PHP10N40E Philips Semiconductors PowerMOS transistor. Avalanche energy rated. Original PDF
    PHP10N40E Toshiba Power MOSFETs Cross Reference Guide Original PDF

    PHP10N40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PHP6N60

    Abstract: 106AG BUK457-400B PHB10N40E PHP10N40 PHP10N40E PHW10N40E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP10N40E, PHB10N40E, PHW10N40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance


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    PDF PHP10N40E, PHB10N40E, PHW10N40E PHP10N40E O220AB) PHW10N4ion PHP6N60 106AG BUK457-400B PHB10N40E PHP10N40 PHW10N40E

    PHP6N60

    Abstract: BUK457-400B PHB10N40E PHP10N40 PHP10N40E PHW10N40E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP10N40E, PHB10N40E, PHW10N40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance


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    PDF PHP10N40E, PHB10N40E, PHW10N40E PHP10N40E O220AB) PHW10N4n PHP6N60 BUK457-400B PHB10N40E PHP10N40 PHW10N40E

    PHP10N40E

    Abstract: PHX5N40E
    Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP10N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable


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    PDF PHP10N40E OT186A PHX5N40E PHP10N40E PHX5N40E

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


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    PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    BUK457-400B

    Abstract: PHP10N40 PHW11N40
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance


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    PDF OT429 PHW11N40 BUK457-400B PHP10N40 PHW11N40

    PHX5N40

    Abstract: PHP10N40 PHX4N60
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in an isolated plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast


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    PDF OT186A PHX5N40 PHX5N40 PHP10N40 PHX4N60

    Electronic ignitors for HID lamp circuits

    Abstract: piezoelectric igniter IR2101 full bridge uba2030 igniter transformer Philips PR02 IGNITER COIL igniter mc34262 Ignition Transformer philips
    Text: Subject : MHN-TD 70W Driver with UBA2030 Pages: 39 Summary : This report describes a lamp driver concept intended for the MHL-TD 70W lamp Metal Halide Lamp used in general lighting applications. The circuit is a cascade of a buck converter and commutator. The latter is driven by


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    PDF UBA2030 UBA2030. UBA2030; -570V 150nF 220nF 100pF 1000k Electronic ignitors for HID lamp circuits piezoelectric igniter IR2101 full bridge uba2030 igniter transformer Philips PR02 IGNITER COIL igniter mc34262 Ignition Transformer philips

    PCA1318P

    Abstract: philips Pca1318p tda8369 TEA5713 pca1318 ON4801 92112 eeprom on4800 ON4836 eeprom 92112
    Text: PRODUCT DISCONTINUATION DN42 NOTICE December 31, 1999 CONTRACTS DEPT. NOTE NEW CODING DISCONTINUATION TYPE CODE T= Type number fully withdrawn N= Packing option ONLY withdrawn SOURCE CODE C = Customer specific product M = Multi source product S = Sole source product


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    PDF DN-42 REPLACec-99 30-Jun-00 PCA1318P philips Pca1318p tda8369 TEA5713 pca1318 ON4801 92112 eeprom on4800 ON4836 eeprom 92112

    PHX5N40

    Abstract: PHP10N40 PHX10N40E PHX4N60
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHX10N40E FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Isolated package


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    PDF PHX10N40E OT186A PHX5N40 PHP10N40 PHX10N40E PHX4N60

    PHP10N40

    Abstract: BUK457-400B
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance


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    PDF O220AB PHP10N40 PHP10N40 BUK457-400B

    BUK457-400B

    Abstract: PHB10N40 PHP10N40
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high


    Original
    PDF OT404 PHB10N40 BUK457-400B PHB10N40 PHP10N40

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP10N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable


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    PDF PHP10N40E PHX5N40E OT186A

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors PHP10N40E, PHB10N40E, PHW10N40E Avalanche energy rated_ FEATURES • • • • • SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics


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    PDF PHP10N40E, PHB10N40E, PHW10N40E PHP10N40E PHW10N40E

    diode sy 400

    Abstract: sy 320 diode
    Text: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP10N40E QUICK REFERENCE DATA SYM BO L N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable


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    PDF PHP10N40E T0220AB diode sy 400 sy 320 diode

    PHP10N40E

    Abstract: PHX5N40E
    Text: Objective specification Philips Semiconductors PowerMOS transistor Isolated version of PHP10N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable


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    PDF PHP10N40E PHX5N40E -SOT186A OT186A; PHP10N40E PHX5N40E

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors PHP10N40E, PHB10N40E, PHW10N40E Avalanche energy FEATURES • • • • • QUICK REFERENCE DATA SYMBOL Repetitive Avalanche Rated Fast switching


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    PDF PHP10N40E, PHB10N40E, PHW10N40E PHP10N40E T0220AB)

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP10N40E GENERAL DESCRIPTION PHX5N40E QUICK REFERENCE DATA SYMBOL N-channel enhancement mode PARAMETER field-effect power transistor in a full pack, plastic envelope featuring high


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    PDF PHP10N40E PHX5N40E OT186A

    buk7530-55

    Abstract: mosfet-n SOT166 TOPFET buk7530
    Text: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263


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    PDF 56-800A BUK446-800A BUK456-800B BUK446-800B BUK454-800A BUK444-800A BUK454-800B BUK444-800B BUK456-1000B BUK446-1000B buk7530-55 mosfet-n SOT166 TOPFET buk7530

    buk455

    Abstract: BUK445-100A BUK444 50SP BUK854-500IS BUK854-500 BUK454
    Text: Philips Semiconductors Replacement List REPLACED / WITHDRAWN TYPES The following type numbers were in the previous issue of this handbook, but are not in the current version: TYPE NUMBER BUK105-50L REPLACED BY REASON FOR DELETION see BUK104/106-50L BUK105-50LP


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    PDF BUK105-50L BUK105-50LP BUK105-50S BUK105-50SP BUK444-400B BUK444-500B BUK444-600B BUK445-400B BUK445-500B BUK445-600B buk455 BUK445-100A BUK444 50SP BUK854-500IS BUK854-500 BUK454

    T0-220AB

    Abstract: PHILIPS MOSFET igbt mosfet switch BUK866 4001z
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print, TYPE NUMBER TECHNOLOGY PACKAGE PAGE BUK100-50DL TOPFET T0220AB 38 BUK100-50GL TOPFET


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    PDF BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L T0-220AB PHILIPS MOSFET igbt mosfet switch BUK866 4001z

    BUK444-200

    Abstract: 100a mosfet Philips Semiconductors Selection Guide BUK454-60H BUK108-50DL BUK102-50GL BUk2 BUK44 BUK9630-55 BUK9570-55
    Text: Philips Semiconductors TOPFETs Selection Guide VDs Rdsion lD Id V) (fl) (A) (A) Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET 50 0.028 25 50 125 BUK106-50LP TOPFET SOT263-O1 50 0.028 25 50 125 BUK116-50L TOPFET SOT426 50


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    PDF 7-800B BUK446-800B BUK454-800A BUK444-800A BUK454-800B BUK444-800B BUK456-1OOOB BUK446-1000B T0220AB OT186 BUK444-200 100a mosfet Philips Semiconductors Selection Guide BUK454-60H BUK108-50DL BUK102-50GL BUk2 BUK44 BUK9630-55 BUK9570-55

    837 mosfet

    Abstract: 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Types added to the range since the last issue of data handbook SC13 1995 are shown in bold print. TYPE NUMBER TECHNOLOGY PACKAGE BUK100-50DL TOPFET T0220AB PAGE 38 BUK100-50GL TOPFET


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    PDF BUK100-50DL BUK100-50GL BUK100-50GS BUK101-50DL BUK101-50GL BUK101-50GS BUK102-50DL BUK102-50GL BUK102-50GS BUK104-50L 837 mosfet 912 MOSFET T0-220AB PHILIPS MOSFET igbt BUK108-50DL 50SP 200b mosfet MOSFET 1053 mosfet handbook

    BUK445-100A

    Abstract: BUK445-600B
    Text: Philips Semiconductors Replacement List REPLACED / WITHDRAWN TYPES The following type numbers were in the previous issue of this handbook, but are not in the current version: TYPE NUMBER REPLACED BY BUK105-50L see BUK104/106-50L BUK105-50LP see BUK104/106-50LP


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    PDF BUK105-50L BUK105-50LP BUK105-50S BUK105-50SP BUK444-400B BUK444-500B BUK444-600B BUK445-400B BUK445-500B BUK445-600B BUK445-100A