03NG
Abstract: 369D NTD5803NG NTD5803NT4G
Text: NTD5803N Power MOSFET 40 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com • • • • RDS(on) MAX ID MAX 10.1 mW @ 5.0 V 54 A 7.2 mW @ 10 V
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NTD5803N
NTD5803N/D
03NG
369D
NTD5803NG
NTD5803NT4G
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Untitled
Abstract: No abstract text available
Text: NTD5803N Power MOSFET 40 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com V(BR)DSS Applications • • • • 40 V CCFL Backlight
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NTD5803N
NTD5803N/D
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369D
Abstract: NTD5803NG NTD5803NT4G 03NG
Text: NTD5803N Power MOSFET 40 V, 76 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com • • • • RDS(on) MAX ID MAX 10.1 mW @ 5.0 V 54 A 7.2 mW @ 10 V
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NTD5803N
NTD5803N/D
369D
NTD5803NG
NTD5803NT4G
03NG
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Untitled
Abstract: No abstract text available
Text: NTD5803N Power MOSFET 40 V, 76 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com 40 V CCFL Backlight DC Motor Control Class D Amplifier Power Supply Secondary Side Synchronous Rectification
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NTD5803N
NTD5803N/D
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Untitled
Abstract: No abstract text available
Text: NTD5803N Power MOSFET 40 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com Applications • • • • RDS(on) MAX V(BR)DSS 40 V CCFL Backlight
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NTD5803N
NTD5803N/D
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