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    03NG Price and Stock

    BOYD Laconia MAX03NG

    MAX CLIP TO-247/MAX247 STD-FORCE
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    DigiKey MAX03NG Bulk 26,321 1
    • 1 $0.36
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    Mouser Electronics MAX03NG 10,859
    • 1 $0.54
    • 10 $0.533
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    Interstate Connecting Components MAX03NG 3,895
    • 1 $0.3235
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    New Advantage Corporation MAX03NG 83,000 1
    • 1 -
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    • 1000 $0.3929
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    NKK Switches UB15SKW03N-G

    SWITCH PUSHBUTTON SPDT 5A 125V
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    DigiKey UB15SKW03N-G Bulk 55 1
    • 1 $9.79
    • 10 $8.451
    • 100 $7.2886
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    Mouser Electronics UB15SKW03N-G
    • 1 $9.52
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    RS UB15SKW03N-G Bulk 12 Weeks 1
    • 1 $8.92
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    TTI UB15SKW03N-G Bulk 1
    • 1 $7.93
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    Powell Electronics UB15SKW03N-G 151 1
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    NKK Switches UB25SKW03N-G

    SWITCH PUSHBUTTON DPDT 5A 125V
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    DigiKey UB25SKW03N-G Tray 47 1
    • 1 $12.31
    • 10 $10.621
    • 100 $9.29213
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    Mouser Electronics UB25SKW03N-G
    • 1 $12.08
    • 10 $10.62
    • 100 $8.68
    • 1000 $7.92
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    RS UB25SKW03N-G Bulk 12 Weeks 1
    • 1 $12.21
    • 10 $11.84
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    TTI UB25SKW03N-G Bulk 20 1
    • 1 $11.95
    • 10 $10.62
    • 100 $9.12
    • 1000 $7.93
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    NKK Switches UB26SKW03N-G

    SWITCH PUSHBUTTON DPDT 5A 125V
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    DigiKey UB26SKW03N-G Tray 39 1
    • 1 $10.45
    • 10 $9.018
    • 100 $7.88988
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    Mouser Electronics UB26SKW03N-G
    • 1 $10.45
    • 10 $9.02
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    RS UB26SKW03N-G Bulk 12 Weeks 1
    • 1 $13.02
    • 10 $12.62
    • 100 $12.21
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    TTI UB26SKW03N-G Bulk 1
    • 1 $10.86
    • 10 $10.44
    • 100 $9.84
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    Powell Electronics UB26SKW03N-G 1 1
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    NKK Switches UB16SKG03N-G

    SWITCH PUSH SPDT 0.4VA 28V
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    DigiKey UB16SKG03N-G Box 20 1
    • 1 $11.17
    • 10 $9.637
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    RS UB16SKG03N-G Bulk 12 Weeks 1
    • 1 $11.35
    • 10 $9.64
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    TTI UB16SKG03N-G Bulk 1
    • 1 $10.66
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    • 1 $10.67
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    Find more 03NG price and stock on Findchips.com

    03NG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUK9Y14-40B

    Abstract: No abstract text available
    Text: BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 — 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This


    Original     		PDF BUK9Y14-40B BUK9Y14-40B

    BUK75

    Abstract: BUK754R0-55B BUK764R0-55B
    Text: BUK754R0-55B; BUK764R0-55B N-channel TrenchMOS standard level FET Rev. 04 — 4 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.


    Original     		PDF BUK754R0-55B; BUK764R0-55B BUK75 BUK754R0-55B BUK764R0-55B

    7905 datasheet

    Abstract: BUK7105-40AIE BUK7905-40AIE SOT426
    Text: BUK71/7905-40AIE TrenchPLUS standard level FET Rev. 03 — 23 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS


    Original     		PDF BUK71/7905-40AIE BUK7105-40AIE OT426 BUK7905-40AIE OT263B O-220) 7905 datasheet SOT426

    buk954r2

    Abstract: BUK95 BUK954R2-55B
    Text: BUK954R2-55B N-channel TrenchMOS logic level FET Rev. 03 — 8 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK954R2-55B buk954r2 BUK95 BUK954R2-55B

    BUK9609-40B

    Abstract: BUK95
    Text: BUK9609-40B N-channel TrenchMOS logic level FET Rev. 02 — 7 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9609-40B BUK9609-40B BUK95

    BUK9212-55B

    Abstract: No abstract text available
    Text: BUK9212-55B TrenchMOS logic level FET Rev. 02 — 12 December 2003 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.


    Original     		PDF BUK9212-55B M3D300 OT428 BUK9212-55B

    7905

    Abstract: 7905 datasheet description of transistor 7905 7905 application note 7905 pin details MA 7905 BUK7105-40ATE BUK7905-40ATE
    Text: BUK71/7905-40ATE TrenchPLUS standard level FET Rev. 01 — 20 August 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring both very low on-state resistance and


    Original     		PDF BUK71/7905-40ATE BUK7105-40ATE OT426 BUK7905-40ATE OT263B O-220) 7905 7905 datasheet description of transistor 7905 7905 application note 7905 pin details MA 7905

    BUK9540-100A

    Abstract: BUK9640-100A
    Text: BUK95/9640-100A TrenchMOS logic level FET Rev. 03 — 08 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability:


    Original     		PDF BUK95/9640-100A BUK9540-100A O-220AB) BUK9640-100A OT404 OT404,

    D 795 A

    Abstract: No abstract text available
    Text: BUK95/96/9E06-55B TrenchMOS logic level FET Rev. 02 — 10 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology, featuring very low


    Original     		PDF BUK95/96/9E06-55B BUK9506-55B O-220AB) BUK9606-55B OT404 BUK9E06-55B OT226 D 795 A

    BUK9506-40B

    Abstract: BUK9606-40B A7550
    Text: BUK95/9606-40B TrenchMOS logic level FET Rev. 01 — 14 May 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.


    Original     		PDF BUK95/9606-40B BUK9506-40B O-220AB) BUK9606-40B OT404 A7550

    BUK9512-55B

    Abstract: BUK9612-55B
    Text: BUK95/9612-55B TrenchMOS logic level FET Rev. 01 — 28 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.


    Original     		PDF BUK95/9612-55B BUK9512-55B O-220AB) BUK9612-55B OT404

    BUK9516-75B

    Abstract: BUK9616-75B
    Text: BUK95/9616-75B TrenchMOS logic level FET Rev. 01 — 23 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.


    Original     		PDF BUK95/9616-75B BUK9516-75B O-220AB) BUK9616-75B OT404

    BUK762R7-30B

    Abstract: BUK752R7-30B BUK7E2R7-30B
    Text: BUK75/76/7E2R7-30B TrenchMOS standard level FET Rev. 03 — 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.


    Original     		PDF BUK75/76/7E2R7-30B OT404, OT226 BUK762R7-30B BUK752R7-30B BUK7E2R7-30B

    03NG

    Abstract: 369D NTD5803NG NTD5803NT4G
    Text: NTD5803N Power MOSFET 40 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com • • • • RDS(on) MAX ID MAX 10.1 mW @ 5.0 V 54 A 7.2 mW @ 10 V


    Original     		PDF NTD5803N NTD5803N/D 03NG 369D NTD5803NG NTD5803NT4G

    BUK95

    Abstract: BUK9506-40B
    Text: TO -22 0A B BUK9506-40B N-channel TrenchMOS logic level FET Rev. 02 — 25 January 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9506-40B BUK95 BUK9506-40B

    BUK95

    Abstract: BUK952R8-30B
    Text: TO -22 0A B BUK952R8-30B N-channel TrenchMOS logic level FET Rev. 3 — 8 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK952R8-30B BUK95 BUK952R8-30B

    BUK95

    Abstract: BUK9E3R2-40B
    Text: I2P AK BUK9E3R2-40B N-channel TrenchMOS logic level FET Rev. 5 — 16 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		PDF BUK9E3R2-40B BUK95 BUK9E3R2-40B

    Untitled

    Abstract: No abstract text available
    Text: BUK95/9610-100B TrenchMOS logic level FET Rev. 01 — 09 April 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using generation three TrenchMOS™ technology, featuring very low on-state resistance.


    Original     		PDF BUK95/9610-100B BUK9510-100B O-220AB) BUK9610-100B OT404

    Untitled

    Abstract: No abstract text available
    Text: BUK71/7905-40AIE TrenchPLUS standard level FET Rev. 01 — 25 July 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance, TrenchPLUS


    Original     		PDF BUK71/7905-40AIE BUK7105-40AIE OT426 BUK7905-40AIE OT263B O-220AB)

    55b2

    Abstract: No abstract text available
    Text: BUK9Y40-55B N-channel TrenchMOS logic level FET Rev. 02 — 11 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology.


    Original     		PDF BUK9Y40-55B 55b2

    10804

    Abstract: No abstract text available
    Text: BUK9207-30B TrenchMOS logic level FET Rev. 01 — 12 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very


    Original     		PDF BUK9207-30B M3D300 BUK9207-30B OT428 10804

    55B2

    Abstract: MBL798
    Text: BUK9Y19-55B N-channel TrenchMOS logic level FET Rev. 02 — 11 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology.


    Original     		PDF BUK9Y19-55B 55B2 MBL798

    255L1

    Abstract: No abstract text available
    Text: BUK9209-40B TrenchMOS logic level FET Rev. 01 — 13 December 2002 M3D300 Objective data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology, featuring very


    Original     		PDF BUK9209-40B M3D300 BUK9209-40B OT428 255L1

    buk9l06-55b

    Abstract: MBL370 buk9l06
    Text: BUK9L06-55B TrenchMOS logic level FET Rev. 01 — 13 August 2002 Product data M3D794 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology, featuring very low


    Original     		PDF BUK9L06-55B M3D794 BUK9L06-55B OT78C O-220AB) MBL370 buk9l06