MSB11900Y Search Results

MSB11900Y Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MSB11900Y		Philips Semiconductors	Pulsed Microwave Power Transistor		Original	PDF
MSB11900Y		Philips Semiconductors	Pulsed Microwave Power Transistor		Scan	PDF

MSB11900Y Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE ^ 5 3 ^ 3 1 QOlSQb? fl • OLE D MSB11900Y T - 3 3-1ST PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor two transistor sections intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IFF applications at	OCR Scan	PDF	MSB11900Y 2x160 DD1S070 7Z21014
Untitled Abstract: No abstract text available Text: -T~35>~OS MSB11900Y M AINTENANC E TYPE PHILIPS i n t e r n a t i o n a l 5bE D • 7110aEb ÜDMbBBß b37 H P H I N - PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor tw o transistor sections intended fo r use in m ilitary and professional applications. It operates only in pulsed conditions and is recommended fo r IFF applications at 1.0 9MHz.	OCR Scan	PDF	MSB11900Y 7110aEb 2x1000
MSB11900Y Abstract: No abstract text available Text: -7 -3B-OS MSB11900Y M A IN T E N A N C E T Y P E 5bE J> PHILIPS INTERNATIONAL m 71 1 0 0 2 b GOMbBBÛ b37 • PHIN — PULSED MICROWAVE POWER TRANSISTOR NPN silicon p ow er tran sisto r tw o tran sisto r sections intended f o r use in m ilita ry and professional	OCR Scan	PDF	MSB11900Y 711002b 09MHz. 2x1000 MSB11900Y
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE II ObE D ^ 1^53=131 Q01SQ71 T • MAINTENANCE TYPE I MSB12900Y for new design use MSB11900Y / V T - 3 3 -/5" PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in	OCR Scan	PDF	Q01SQ71 MSB12900Y MSB11900Y)
MSB11900Y Abstract: philips ic power amplifier Text: N AMER PH ILIPS/DI SCRE TE OLE D • bh53iBl DDlSQb? & ■ MSB11900Y T - 3 3 - is r PULSED M ICROW AVE PO W ER TRANSISTOR N-P-N silicon power transistor two transistor sections intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at	OCR Scan	PDF	bb53T31 MSB11900Y T-33-isr 2x160 MSB11900Y T-33-& philips ic power amplifier
MSB12900Y Abstract: j4 transistor MSB11900Y Text: N AMER PHILIPS/DISCRETE t l □ tE D 1=1353=131 0 0 1 5 0 7 1 MAINTENANCE TYPE MSB12900Y for new design use MSB11900Y T-33-JS- PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in	OCR Scan	PDF	MSB11900Y) MSB12900Y 10/is, j4 transistor MSB11900Y
MX0912B250Y Abstract: RV2833B5X RV3135B5X RX1214B150W RX1214B300Y RZ1214B125Y RZ1214B35Y RZ1214B65Y RZ2731B16W MRB11175Y Text: N AMER P H I L I P S / D I S C R E T E 5SE 3> • bbSH^! OOltiSBl 0 ■ T'-J3 3 “' ^ / Power Devices 53 MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE f GHz Vcc (Vi ' U m @ DUTY CYCLE I (%> . Pi. (W> A - ; VC (%) RADAR PULSED L-BAND RZ1214B35Y FO-57C 1.2 - 1.4	OCR Scan	PDF	RZ1214B35Y FO-57C RZ1214B65Y RZ1214B125Y RX1214B150W FO-91 RX1214B300Y MX0912B250Y RV2833B5X RV3135B5X RZ2731B16W MRB11175Y
BPW22A Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey	OCR Scan	PDF	BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
bf0262a Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94 Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A	OCR Scan	PDF	1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A bf0262a BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	PDF	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE 5SE D • bbSHiai 0011.231 ■ ^ 3 3 ~ \ Power Devices MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE < G H z Vcc (V) U 1.2 - 1.4 1.2 -1 .4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 1 .2 -1 .4 1.2 - 1.4 42 50	OCR Scan	PDF	RZ1214B35Y FO-57C RZ1214B65Y RZ1214B125Y RX1214B150W MRB11175Y MRB11350Y MSB11900Y
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	PDF	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
FET BFW10 Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI	OCR Scan	PDF	BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
TXD10K40 Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40	OCR Scan	PDF	bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G