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    BA281 Price and Stock

    Hirose Electric Co Ltd H.FL-LP-FHSB-A-(281)A

    CONNECTOR
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    DigiKey H.FL-LP-FHSB-A-(281)A Bag
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    SiTime Corporation SIT8924BA-28-18N-22.579200

    MEMS OSC XO 22.5792MHZ LVCMOS LV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT8924BA-28-18N-22.579200 1
    • 1 $4.55
    • 10 $4.325
    • 100 $3.7556
    • 1000 $3.07277
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    SiTime Corporation SIT8918BA-28-18E-25.000000

    MEMS OSC XO 25.0000MHZ LVCMOS LV
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    DigiKey SIT8918BA-28-18E-25.000000 1
    • 1 $4.55
    • 10 $4.325
    • 100 $3.7556
    • 1000 $3.07277
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    SiTime Corporation SIT1418BA-28-18N-25.000000E

    OSCILLATOR, SIT1418, -40 to 125C, 3225, 30ppm, Default Dr Str, 1.8V, 25MHz, OE, T&R - Tape and Reel (Alt: SIT1418BA-28-18N-2)
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    Avnet Americas SIT1418BA-28-18N-25.000000E Reel 1,000
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    SiTime Corporation SIT8918BA-28-18E-25.000000E

    1-110 MHZ, HIGH TEMPERATURE OSCILLATOR, -40 TO 125C, 3225, 30PPM, DEFAULT DR STR, 1.8V, 25MHZ, OE, SMD - Tape and Reel (Alt: SIT8918BA-28-18E-2)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIT8918BA-28-18E-25.000000E Reel 12 Weeks 1,000
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    Find more BA281 price and stock on Findchips.com

    BA281 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BA281 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA281 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA281 Unknown Cross Reference Datasheet Scan PDF
    BA281 Philips Semiconductors 60V Vrrm, 1.2pF Capacitance Varactor Diode Scan PDF

    BA281 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    BA142

    Abstract: No abstract text available
    Text: Target Information FLASH MEMORY K8Q2815UQB 128Mb B-die Page NOR Specification Dual Die Package 56TSOP (64Mb x 2) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8Q2815UQB 128Mb 56TSOP) similar90000h-097FFFh 088000h-08FFFFh 080000h-087FFFh 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh BA142

    BA512

    Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
    Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh


    Original     		PDF K8S5615ET 22F8h 22FEh 54MHz 66MHz 270sec 240sec 256Byte 00003FH 00007FH BA512 ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379

    BA339

    Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
    Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA339 BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204

    BA339

    Abstract: K8C1215ET BA507
    Text: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339 K8C1215ET BA507

    BA339

    Abstract: No abstract text available
    Text: Advance Information FLASH MEMORY K8C12 13 15ET(B)M 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339

    ba508

    Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
    Text: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary


    Original     		PDF K5L5628JT 115-Ball 80x13 ba508 BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns---

    BA379

    Abstract: BA506 BA438 BA508 BA306 ba473 BA431 BA356 BA471 ba258
    Text: Rev. 1.1, Sep. 2010 K8S1215ETC K8S1215EBC K8S1215EZC 512Mb C-die NOR FLASH 9x11, 64FBGA, 32M x16, Muxed Burst, Multi Bank SLC 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K8S1215ETC K8S1215EBC K8S1215EZC 512Mb 64FBGA, 0150000h-015FFFFh 0140000h-014FFFFh 0130000h-013FFFFh 0120000h-012FFFFh 0110000h-011FFFFh BA379 BA506 BA438 BA508 BA306 ba473 BA431 BA356 BA471 ba258

    BA339

    Abstract: ba406 K8F1315ETM
    Text: K8F12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8F12 512Mb inh-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh 0090000h-009FFFFh 0080000h-008FFFFh BA339 ba406 K8F1315ETM

    ba508

    Abstract: BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329
    Text: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- ba508 BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329

    BA339

    Abstract: AMD+Athlon+64+X2+pin+diagram kuhnke+z396.64
    Text: K8F12 13 15ET(B)M NOR FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8F12 512Mb couldresul0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh 0090000h-009FFFFh 0080000h-008FFFFh 0070000h-007FFFFh BA339 AMD+Athlon+64+X2+pin+diagram kuhnke+z396.64

    transistor A1624

    Abstract: ba21 transistor Samsung K5 128MB flash BA252 BA339 512Mb nor flash memory K5N1229ACD-BQ12 TBA 1205 K5n12 samsung, K5N
    Text: Rev. 1.0, Jun. 2010 K5N1229ACD-BQ12 MCP Specification 512Mb 32M x16 Muxed Burst, Multi Bank SLC NOR Flash + 128Mb (8M x16) Multiplexed Synchronous Burst UtRAM2 datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF K5N1229ACD-BQ12 512Mb 128Mb transistor A1624 ba21 transistor Samsung K5 128MB flash BA252 BA339 512Mb nor flash memory K5N1229ACD-BQ12 TBA 1205 K5n12 samsung, K5N

    BA339

    Abstract: ba379 BA489
    Text: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339 ba379 BA489

    6822

    Abstract: resistor 56E BA281
    Text: SbE » • VllDÖSb ODMOOR? TÔT « P H I N PHILIPS INTERNATIONAL SbE T> II BA281 T- 07-07 ÜN SILICON RATIO DETECTOR DIODE Silicon planar epitaxial diode in DO -35 envelope, intended fo r use in ratio detector circuits. Due to small spreads of forw ard voltage at low currents and of junction capacitance, the diodes can be used as


    OCR Scan     		PDF BA281 T-07-07 DO-35 DO-35 OD-27) 7Z86588 6822 resistor 56E

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bbSB'lBl ODSblMa 113 • APX BA 281 blE D A SILICON RATIO DETECTOR DIODE Silicon planar epitaxial diode in DO-35 envelope, intended for use in ratio detector circuits. Due to small spreads of forward voltage at low currents and of junction capacitance, the diodes can be used as


    OCR Scan     		PDF DO-35 DO-35 OD-27) 10/rA

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    Toko 20211

    Abstract: TEA5560 85ACS toko coils fm detector BA281
    Text: TEA5560 J V_ FM/IF SYSTEM GENERAL DESCRIPTION The TEA5560 is a monolithic integrated FM/IF system circuit, intended for car radios and homereceivers equipped with a ratio detector. The system incorporates the following functions: • a three-stage i.f. limiting amplifier


    OCR Scan     		PDF TEA5560 TEA5560 TEA5560and BA281 Toko 20211 85ACS toko coils fm detector

    TEA5560

    Abstract: AA119 avg9 diode aa119 ba281 AA119 application
    Text: TE A 5560 _ FM/IF SYSTEM G E N E R A L D E S C R IP T IO N The T E A 5 5 6 0 is a m o n o lith ic integrated F M /IF system c irc u it, intended fo r car radios and homereceivers equipped w ith a ra tio detector. The system incorporates th e fo llo w in g fu n ctio n s:


    OCR Scan     		PDF TEA5560 TEA5560 AA119 avg9 diode aa119 ba281 AA119 application

    BA281

    Abstract: ratio Detector D02fc diode 420 colourcoded diodes
    Text: N AMER PHILIPS/DISCRETE bTE D • bbSB'lBl DOSblMâ A 113 iA P X BA 281 SILICON RATIO DETECTOR DIODE Silicon planar epitaxial diode in DO-35 envelope, intended fo r use in ratio detector circuits. Due to small spreads o f forw ard voltage at low currents and o f junction capacitance, the diodes can be used as


    OCR Scan     		PDF D02fc BA281 DO-35 DO-35 OD-27) 7Z86588 ratio Detector diode 420 colourcoded diodes

    SAA1057

    Abstract: tbf 494 TEA6000 Saa1057 TEA6000 ACS-4238 AA119 BA281 b0951 095. 931 SAA 1220
    Text: TEA6000 FM/IF SYSTEM AND MICROCOMPUTER-BASED TUNING INTERFACE GENERAL DESCRIPTION The TEA6000 is an FM /IF system circu it intended fo r m icrocomputer controlled radio receivers. The circu it includes an A M /F M -IF counter and an analogue-to-digital interface. The i.f. counter generates


    OCR Scan     		PDF TEA6000 TEA6000 SAA1057) SAA1057 tbf 494 TEA6000 Saa1057 ACS-4238 AA119 BA281 b0951 095. 931 SAA 1220

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    TELEVISION EHT TRANSFORMERS

    Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
    Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes


    OCR Scan     		PDF LCD01 TELEVISION EHT TRANSFORMERS BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31