MPF930A
Abstract: MPF930 MPF960 MPF990RLRA MPF990 MPF930 Transistor MPF960 equivalent MPF930RLRE MPF960RLRA MPF990RLRP
Text: MPF930, MPF960, MPF990 Preferred Device Small Signal MOSFET 2 Amps, 35, 60, 90 Volts N–Channel TO–92 MAXIMUM RATINGS Rating http://onsemi.com Symbol MPF930 MPF960 MPF990 Unit Drain–Source Voltage VDS 35 60 90 Vdc Drain–Gate Voltage VDG 35 60 90 Vdc
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MPF930,
MPF960,
MPF990
MPF930
MPF960
MPF930)
MPF960)
MPF990)
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MPF930A
MPF930
MPF960
MPF990RLRA
MPF990
MPF930 Transistor
MPF960 equivalent
MPF930RLRE
MPF960RLRA
MPF990RLRP
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MPF960 equivalent
Abstract: BC108 characteristic Characteristic curve BC107 BC237 bc107a pin out
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement MPF930 MPF960 MPF990 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol MPF930 MPF960 MPF990 Unit Drain – Source Voltage VDS 35 60 90 Vdc Drain – Gate Voltage VDG 35 60
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MPF930
MPF960
MPF990
MPF990
226AE)
MSC1621T1
MSC2404
MSD1819A
MPF960 equivalent
BC108 characteristic
Characteristic curve BC107
BC237
bc107a pin out
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MPF930
Abstract: MPF960 MPF990
Text: MPF930 TMOS Switching N−Channel — Enhancement MAXIMUM RATINGS Rating Symbol MPF930 MPF960 MPF990 Unit Drain −Source Voltage VDS 35 60 90 Vdc Drain −Gate Voltage VDG 35 60 90 Vdc Gate−Source Voltage — Continuous — Non−repetitive tp ≤ 50 s
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MPF930
MPF960
MPF990
O-226AE)
MPF930/D
MPF930
MPF960
MPF990
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Untitled
Abstract: No abstract text available
Text: Eu ^ami-donauctoi ^Product*., One. </ TMOS Switching MPF930 MPF960 MPF990 N-Channel — Enhancement 3 DRAIN 1 SOURCE MAXIMUM RATINGS Rating Drain -Source Voltage Drain-Gate Voltage Gate-Source Voltage — Continuous — Non-repetitive tp < 50 u.s Symbol
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MPF930
MPF960
MPF990
O-226AE)
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MPF960
Abstract: MPF990 MPF930 motorola MPF990
Text: MOTOROLA Order this document by MPF930/D SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement MPF930 MPF960 MPF990 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol MPF930 MPF960 MPF990 Unit Drain – Source Voltage VDS 35 60 90 Vdc
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MPF930/D
MPF930
MPF960
MPF990
226AE)
MPF960
MPF990
MPF930
motorola MPF990
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2N5337
Abstract: 2N6191 MJF16206 MJW16206 MR856 MTP8P10 MUR8100 MUR8100E
Text: MOTOROLA Order this document by MJW16206/D SEMICONDUCTOR TECHNICAL DATA MJW16206 SCANSWITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state–of–the–art SWITCHMODE bipolar
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MJW16206/D
MJW16206
MJF16206
MJW16206
MJW16206/D*
2N5337
2N6191
MR856
MTP8P10
MUR8100
MUR8100E
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*e13007
Abstract: bipolar transistor td tr ts tf equivalent of transistor mje13007
Text: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V
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MJE13007
MJE13007
O-220
QW-R203-019
*e13007
bipolar transistor td tr ts tf
equivalent of transistor mje13007
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EQUIVALENT FOR mjf18004
Abstract: MOTOROLA MJW16212 MC1391P MJ11016 MJE18002 MJE18004 MJE18006 MJE18008 MJF18002 MJF18004
Text: MOTOROLA Order this document by MJW16212/D SEMICONDUCTOR TECHNICAL DATA MJF18002 See MJE18002 MJF18004 (See MJE18004) MJF18006 (See MJE18006) MJF18008 (See MJE18008) SCANSWITCH NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors
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MJW16212/D
MJF18002
MJE18002)
MJF18004
MJE18004)
MJF18006
MJE18006)
MJF18008
MJE18008)
MJW16212*
EQUIVALENT FOR mjf18004
MOTOROLA MJW16212
MC1391P
MJ11016
MJE18002
MJE18004
MJE18006
MJE18008
MJF18002
MJF18004
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02D2G
Abstract: MJD18002D2T4G 18002d2 MJD18002D2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12
Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot
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MJD18002D2
MJD18002D2
MJD18002D2/D
02D2G
MJD18002D2T4G
18002d2
MJD18002D2T4
MPF930
MTP8P10
MJD18002D2 Motorola
MTP12
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221D
Abstract: MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
Text: ON Semiconductor MJE18004 * MJF18004 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art
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MJE18004
MJF18004
MJE/MJF18004
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MJE18004/D
221D
MJE18004
MJE210
MJF18004
MPF930
MTP8P10
MUR105
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18004D2
Abstract: MJB18004D2T4 MJE210 MPF930 MTP12N10 MTP8P10 MUR105 SOT223 Package
Text: ON Semiconductort High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network MJB18004D2T4 POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS D2PAK For Surface Mount The MJB18004D2T4 is state–of–art High Speed High gain Bipolar
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MJB18004D2T4
MJB18004D2T4
18004D2
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MJB18004D2T4/D
18004D2
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
SOT223 Package
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221D
Abstract: MJE18006 MJE210 MJF18006 MPF930 MTP8P10 MUR105
Text: MOTOROLA Order this document by MJE18006/D SEMICONDUCTOR TECHNICAL DATA MJE18006 * MJF18006 * Data Sheet SWITCHMODE Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 6.0 AMPERES
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MJE18006/D*
MJE18006/D
221D
MJE18006
MJE210
MJF18006
MPF930
MTP8P10
MUR105
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BUL44
Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Text: ON Semiconductort BUL44 SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44 have an applications specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies
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BUL44
BUL44
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BUL44/D
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
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MTP8P10
Abstract: MUR105 BUD43D2 MJE210 MPF930 MTP12N10
Text: BUD43D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUD43D2 is a state–of–the–art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally
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BUD43D2
BUD43D2
BUD43D2:
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BUD43D2/D
MTP8P10
MUR105
MJE210
MPF930
MTP12N10
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transistor mosfet buv18a
Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9
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221D
Abstract: MJE18009 MJE210 MJF18009 MPF930 MTP12N10 MTP8P10 MUR105
Text: MOTOROLA Order this document by MJE18009/D SEMICONDUCTOR TECHNICAL DATA MJE18009 MJF18009 Data Sheet SWITCHMODE NPN Designer's Silicon Planar Power Transistor The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast “light
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MJE18009/D
MJE18009
MJF18009
MJE/MJF18009
E69369
MJE18009/D*
221D
MJE18009
MJE210
MJF18009
MPF930
MTP12N10
MTP8P10
MUR105
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PF960
Abstract: D004 power ic pf990
Text: MOTOROLA SEM ICONDUCTOR MPF930 MPF960 MPF990 TECHNICAL DATA N -C H A N N E L E N H A N C E M E N T -MO DE TM O S F IE L D -E F F E C T T R A N S IS T O R 2 .0 A M P E R E N-CHANNEL TMOS FETs T h e s e T M O S FE Ts a re d e s ig n e d f o r h ig h - s p e e d s w it c h in g a p p li
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MPF930
MPF960
MPF990
MPF930,
PF960
D004 power ic
pf990
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F930
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching MPF930 MPF960 MPF990 N-Channel — Enhancement 3 DRAIN 2 GATE V S \ 1 SOURCE MAXIMUM RATINGS Rating D ra in -S o u rc e Voltage D r a in -G a te Voltage Symbol MPF930 MPF960 MPF990 Unit VdS 35 60 90 Vdc
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MPF930
MPF960
MPF990
MPF930
MPF960
F930
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TO-226-AE
Abstract: No abstract text available
Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA TM O S Sw itching N -C h a n n e l — Enhancem ent MPF930 MPF960 MPF990 3 DRAIN M A X IM U M R A T IN G S Symbol MPF930 MPF960 MPF990 Unit Drain-Source Voltage VD S 35 60 90 Vdc Drain-Gate Voltage V DG 35 60 90 Vdc
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MPF930
MPF960
MPF990
MPF990
O-226AE)
GCH37S7
TO-226-AE
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motorola mpf990
Abstract: No abstract text available
Text: MPF930* MPF960* MPF990* M A X IM U M R ATIN G S Rating Symbol MPF930 MPF960 MPF990 Unit Drain-Source Voltage VDS 35 60 90 Vdc Drain-Gate Voltage VDG 35 60 90 Vdc Gate-Source Voltage — Continuous - Non-repetitive tp s 50 ¿¿s Drain Current Continuous (1)
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MPF930*
MPF960*
MPF990*
MPF930
MPF960
MPF990
O-226AE)
MPF990
motorola mpf990
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F930
Abstract: T12P MPF960 F990
Text: MPF930* MPF960* MPF990* M AXIMUM RATINGS Rating Symbol MPF930 MPF960 MPF990 D ra in -S o u rc e V o lta g e V DS 35 D ra in -G a te V o lta g e V DG 35 G a te -S o u rc e V o lta g e V GS CASE 29-03, STYLE 22 TO-92 TO-226AE Unit 60 90 Vdc 60 90 V dc 3 D rain
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MPF930*
MPF960*
MPF990*
MPF930
MPF960
MPF990
O-226AE)
MPF930,
MPF960,
F930
T12P
F990
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MPF3330
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 15E D | b3b7554 0001.705 T I T"Ä! MPF990 For Specifications, See MPF930 _ _ _ _ . MPF3330 CASE 29-04, STYLE 5 TO-92 TO-226AA M A X I M U M R A T IN G S Sym bol Valu» U nit Drain-Gate Voltage Vdg 20 Vdc Gate-Source Voltage Vq s 20
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b3b7554
MPF990
MPF930
MPF3330
O-226AA)
2N5460
MPF3330
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TP12N10
Abstract: je210 MJF16206 desaturation design 1200 volt npn MJW16206 MPF930 MTP8P10 MUR8100E ex 3863
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JW 16206 SCANSW ITCH NPN Bipolar Power Deflection Transistors For High and Very High Resolution CRT Monitors The MJF16206 and the MJW16206 are state-of-the-art SWITCHMODE bipolar power transistors. They are specifically designed for use in horizontal deflection
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MJW16206
MJF16206
AN1040.
TP12N10
je210
desaturation design
1200 volt npn
MPF930
MTP8P10
MUR8100E
ex 3863
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MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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06050L
MMBD914L
BAS16L
BAL99L
MBAV70L
MBAV99L
MBAV74
BD2835XL
MBD2836XL
MMBD2837XL
MMBF112L
MFE521
MMBF112
2N3797 equivalent
MFE131 equivalent
MPS5210
BC557 SOT23
8C448
BC459C
mfe211
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