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    221D Search Results

    221D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    U98B1221DC1 Amphenol Communications Solutions CFP2, Input Output Connectors, CAGE SINGLE PORT W HS Visit Amphenol Communications Solutions
    RJMG221DRAB70NR Amphenol Communications Solutions RJMG, Input output Connectors, 2x1,1G,with LEDs Visit Amphenol Communications Solutions
    RJMG1610221D0NR Amphenol Communications Solutions RJMG, Input output Connectors, 1x1,10/100 with LEDs Visit Amphenol Communications Solutions
    RJMG221D44130ER Amphenol Communications Solutions RJMG, Input output Connectors, 1G 2x1 leds Visit Amphenol Communications Solutions
    THS4221DBVT Texas Instruments Single & Dual(THS4222 ), Low-Distortion High-Speed Rail-to-Rail Output Operational Amplifier 5-SOT-23 -40 to 85 Visit Texas Instruments Buy
    SF Impression Pixel

    221D Price and Stock

    Susumu Co Ltd RR1220P-221-D

    RES SMD 220 OHM 0.5% 1/10W 0805
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    DigiKey RR1220P-221-D Digi-Reel 27,375 1
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    RR1220P-221-D Cut Tape 27,375 1
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    RR1220P-221-D Reel 20,000 5,000
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    Newark RR1220P-221-D Cut Tape 1,917 1
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    Chip1Stop RR1220P-221-D Cut Tape 29,698
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    Susumu Co Ltd RR0306P-221-D

    RES SMD 220 OHM 0.5% 1/20W 0201
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    DigiKey RR0306P-221-D Digi-Reel 9,940 1
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    RR0306P-221-D Cut Tape 9,940 1
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    RR0306P-221-D Reel 5,000 5,000
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    Susumu Co Ltd RG2012P-221-D-T5

    RES SMD 220 OHM 0.5% 1/8W 0805
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    DigiKey RG2012P-221-D-T5 Cut Tape 9,923 1
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    RG2012P-221-D-T5 Digi-Reel 9,923 1
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    Chip1Stop RG2012P-221-D-T5 Cut Tape 5,000
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    INPAQ Technology Co Ltd MLVS1206L40221DG

    VARISTOR 1206 VDC 56V SURGE 200A
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    DigiKey MLVS1206L40221DG Reel 4,000 4,000
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    Nexperia 74HCT221D,118

    IC MULTIVIBRATOR 31NS 16SO
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    DigiKey 74HCT221D,118 Cut Tape 2,500 1
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    74HCT221D,118 Digi-Reel 2,500 1
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    74HCT221D,118 Reel 2,500 2,500
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    Avnet Silica 74HCT221D,118 5,000 10 Weeks 2,500
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    EBV Elektronik 74HCT221D,118 10 Weeks 2,500
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    221D Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2-2-1D Bourns Transformers 6PIN DIP RF WIDEBAND Original PDF
    2-2-1DL Bourns Specialty Transformers, Transformers, MAGNETICS RF TRANSFORMER Original PDF

    221D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistors c 2216

    Abstract: UN2216 un2211 221Z 221D UN2213 221E UN2212 UN2214 UN2215
    Text: Transistors with built-in Resistor / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor For digital circuits +0.25 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05


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    PDF E/221F/221K/221L/221M/221N/221T/221V/221Z UN2211 UN2212 UN2213 UN2214 UN2215 UN2216 UN2217 UN2218 transistors c 2216 UN2216 un2211 221Z 221D UN2213 221E UN2212 UN2214 UN2215

    tip1012

    Abstract: 2N3055-3 MJ15024 MJ15025 2n3055 MJ15003 mj150* darlington mJE2003
    Text: ON Semiconductor Bipolar Power Transistors Bipolar Power Transistors Plastic Isolated TO-220 Type Pin: 1 Ñ Base, 2 Ñ Collector, 3 Ñ Emitter (Style 2, Case 221D-02) Mfr.Õs Type NPN MJF1222 MJF1272 MJF44H11 MJF45H11 2 MJF6388 MJF66682 1 Resistive Switching


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    PDF O-220 221D-02) 340G-01) MJF122 MJF127 MJL3281A MJ14002 MJ14003 MJ10021 MJW16018 tip1012 2N3055-3 MJ15024 MJ15025 2n3055 MJ15003 mj150* darlington mJE2003

    221D

    Abstract: 2-2-1D
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO–220 FULLPAK CASE 221D–02 ISSUE D DATE 11/28/1992 SCALE 1:1 –T– –B– F SEATING PLANE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. S Q U DIM A B C D F


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    PDF

    221D-03

    Abstract: 221D
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE K −T− −B− F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. SEATING


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    PDF O-220 221D-03 221D-01 221D-02 221D-03. 11uch 221D-03 221D

    221D-03

    Abstract: 221D 221D-01 221d01
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO–220 FULLPAK CASE 221D–03 ISSUE G DATE 03/19/2002 SCALE 1:1 –T– –B– F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW


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    PDF 221D-01 221D-02 221D-03. 221D-03 221D 221d01

    R125 680 000

    Abstract: 221D
    Text: SMA RECEPTACLES PRESS MOUNT RECEPTACLES Fig. 1 Part number Fig. 2 Fig. 3 Fig. Captive center contact Panel Finish Note R125 590 001D 1 yes P17 Passivated Solder pot R125 590 201D 2 yes P18 Passivated Straight terminal R125 590 221D 3 yes P16 Passivated Straight terminal


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    221D

    Abstract: 221L UNR2213 UNR2210 UNR2211 UNR2212 UNR2214 UNR2215 UNR2216 UNR2217
    Text: Transistors with built-in Resistor / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor


    Original
    PDF E/221F/221K/221L/221M/221N/221T/221V/221Z UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 10nductor 221D 221L UNR2213 UNR2210 UNR2211 UNR2212 UNR2214 UNR2215 UNR2216 UNR2217

    221D

    Abstract: UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218
    Text: Transistors with built-in Resistor / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z / 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z Silicon NPN epitaxial planer transistor


    Original
    PDF E/221F/221K/221L/221M/221N/221T/221V/221Z UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 221D UNR2210 UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218

    ndf02n60zg

    Abstract: NDD02N60ZT4G NDD02N60Z g1Dv ndf02n60 NDF02N60Z 60ZG
    Text: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com


    Original
    PDF NDF02N60Z, NDD02N60Z 22-A114) NDF02N60Z/D ndf02n60zg NDD02N60ZT4G g1Dv ndf02n60 NDF02N60Z 60ZG

    NDF05N50ZG

    Abstract: NDF05N50 5n50zg NDD05N50 50ZG NDD05N50Z-1G NDD05N50ZT4G
    Text: NDF05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.5 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant


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    PDF NDF05N50Z, NDD05N50Z JESD22-A114) NDF05N50Z/D NDF05N50ZG NDF05N50 5n50zg NDD05N50 50ZG NDD05N50Z-1G NDD05N50ZT4G

    Untitled

    Abstract: No abstract text available
    Text: MURHF860CT Preferred Device SWITCHMODE Power Rectifier . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state-of-the-art devices have the following features: • • • • • • • http://onsemi.com Ultrafast 35 Nanosecond Recovery Times


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    PDF MURHF860CT MURHF860CT/D

    smd diode 1d

    Abstract: diode smd 1D 3361d 2-13-1D 2-13-1W 2-16-6D 2-16-6W 3-16-1D 3-16-1W 3-36-1D
    Text: -1J 4-4 *R oH S CO M PL IA NT Features • Fully encapsulated ■ 6 pin DIP and SMD ■ Low profile ■ Lead free ■ Low insertion loss ■ RoHS compliant* ■ Frequency range 10 kHz to 500 MHz ■ Impedance levels from 12.5 Ω to 800 Ω nominal 50 Ω


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    PDF

    221D

    Abstract: MJF44H11 MJF44H11G MJF45H11 MJF45H11G DSA002840
    Text: MJF44H11 NPN , MJF45H11 (PNP) Preferred Devices Complementary Power Transistors For Isolated Package Applications http://onsemi.com Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in


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    PDF MJF44H11 MJF45H11 MJF44H11/D 221D MJF44H11 MJF44H11G MJF45H11 MJF45H11G DSA002840

    b30h60g

    Abstract: 221D 418D MBR30H60CTG MBRB30H60CT MBRF30H60CTG B30H60 b30h60g DIODE
    Text: MBRB30H60CT−1G, MBR30H60CTG, MBRF30H60CTG SWITCHMODE Power Rectifier 60 V, 30 A http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 30 AMPERES, 60 VOLTS Features and Benefits • • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity


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    PDF MBRB30H60CT-1G, MBR30H60CTG, MBRF30H60CTG O-262) O-220 MBRB30H60CT-1/D b30h60g 221D 418D MBR30H60CTG MBRB30H60CT MBRF30H60CTG B30H60 b30h60g DIODE

    Diode LT 228d

    Abstract: 1E2H SMD making code DV5
    Text: 7: 43 AM PM4323 OCTLIU LT Device ASSP Telecom Standard Product Data Sheet Released ,0 ay co n Th ur sd OCTLIU LT 1M ay ,2 00 8 01 :0 PM4323 of Pa rtm in er In Device Telecom Standard Product Proprietary and Confidential Released Issue No. 5: April 2008 Do


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    PDF PM4323 PMC-2021612, PM4323 PMC-2021612 MO-192, Diode LT 228d 1E2H SMD making code DV5

    340D-01

    Abstract: MBR3545 MBR3045PT motorola 340E-01 221A-06 MBR3045WT
    Text: MOTOROLA SC C DIO DES/OPTO 3 TE ]> a b 3 b ? 2 SS 0G03aG2 G Q M 0 T 7 T -o ^-O Ì *Iq , AVERA G E RECTIFIED FORWARD CURRENT Amperes) 30 25 221D-02 ISOLATED TO-220 O-W-i 11-03 (TO-204AA) o *h 221A-06 (TO-220AB) 340E-01 (TO-218) 340F-01 (TO-247) 340D-01


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    PDF 0G03aG2 221D-02 O-220 O-204AA) 21A-06 O-220AB) 340E-01 O-218) 340D-01 O-218AC) 340D-01 MBR3545 MBR3045PT motorola 340E-01 221A-06 MBR3045WT

    IV-70

    Abstract: 221D
    Text: 1. M e c h a n ic a l D im e n s i o n s : 2. S c h e m a t i c : o- 1 3 .0 0 Max 9f l QD Mn v o_a X X ~n ~n iv> 70 Ln in o CD -< I I < o ^ 3. Electrical Specifications: In d u c ta n c e : 2 5 0 .9 0 u H ± 2 0 % 10.00± 3.00 DC Res.: D .221D O hm s Max DC C u rre n t:


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    PDF MIL-5TD-202. UL94V-0 E15155G -t-125 250mV 100KHz 1XF2506-V0 Dec-15-04 IV-70 221D

    MTP3055EL

    Abstract: MTP n-channel mosfet to 220 TD3055EL 221A-06 TP12N10 Power MOSFETs Cross Reference Guide motorola TO-252 TP25N10
    Text: TT TMOS TMOS Power MOSFETs Logic Level Power MOSFETs ISOLATED TO-220 CASE 221D-02 MTA PREFIX T0-220AB CASE 221A-06 (MTP PREFIX TO-251* CASE 369-05 (MTD PREFIX) TO-252 CASE 369A-09 (MTD PREFIX) Logic level M O SFETs are fu lly en ha nce d w ith 5 volts applied to the gate.


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    PDF O-220 221D-02 T0-220AB 21A-06 O-251* O-252 69A-09 O-22QAB) TP12N10EL TA11N10ELSÙ MTP3055EL MTP n-channel mosfet to 220 TD3055EL 221A-06 TP12N10 Power MOSFETs Cross Reference Guide motorola TO-252 TP25N10

    221A-06

    Abstract: 221D-02 MPPD2021 mla1n06cl ccogn
    Text: V T M O S CASE 221D-02 ISOLATED TO-220 MLA PREFIX (MPPD PREFIX) S T0-220AB CASE 221A-06 (MLP PREFIX) The SMARTDISCRETE Concept MLA1N06CL and MLP1N06CL From a stan dard po w e r M O S F E T pro cess, several active and passive elem e nts can be o b tain ed tha t provide on-chip


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    PDF 221D-02 O-220 T0-220AB 21A-06 curre1A-06 MLP1N06CL MPPD2021 221D-02 221A-06 MPPD2021 mla1n06cl ccogn

    JF18006

    Abstract: No abstract text available
    Text: O rder this data sheet by M JE18006/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 18006 M JF18006 Designer’s Data Sheet SWITCHMODE™ Motorola Preferred Devices NPN Bipolar Pow er Hransistor For S w itching Pow er Supply A pplications The M JE/M JF18006 have an applications specific state-of-the-art die designed for use


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    PDF JE18006/D JF18006 O-220 O-220 MJF18006, 221D0AB 221D-01 221D-02.

    taiyo yuden umk

    Abstract: UMK107 TMK105CH UMK105 EMK105A tmk063
    Text: iflJtffiflfffl-C lass 1 ST A N D A R D M U L T IL A Y E R C E R A M IC C A PA C IT O R S (CL AS SI : TEMPERATURE COMPENSATING DIELECTRIC TYPE) OPERATING TEMP. -5 5 ~ + 1 2 5 ”C •Improve Higher Mounting Densities. • Multilayer block structure provides higher reliability


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    PDF 420DZ 030DZ 040DZ 050DZ A060D A070DZ 080DZ 090DZ 100DZ 120GZ taiyo yuden umk UMK107 TMK105CH UMK105 EMK105A tmk063

    221ak

    Abstract: No abstract text available
    Text: Tem ic DG221 S e m i c o n d u c t o r s Quad SPST CMOS Analog Switch with Latches Features Benefits • A ccepts 150-ns W rite Pulse W idth Applications C om patible w ith M ost ^iP Buses A llow s W ide Pow er Supply Tolerance W ithout A ffecting TTL C om patibility


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    PDF DG221 150-ns DG221 pr-97 S-52881-- -Apr-97 221ak

    Untitled

    Abstract: No abstract text available
    Text: Temic DG221 S e m i c o n d u c t o r s Quad SPST CMOS Analog Switch with Latches Features Benefits • Accepts 150-ns W rite Pulse W idth • 5-V O n-C hip Regulator • Built on PLU S-40 Process • Latches Are Transparent with W R Low • Low O n-R esistance: 60 Q


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    PDF DG221 150-ns DG221 pr-97

    Untitled

    Abstract: No abstract text available
    Text: Resistors/Thermistors NTC for Temperature Compensation 0603 1608 Size (Ag A-loy - N i Plating + Sn Pla ting , P a rt N u m b e r R e s is ta n c e (2 5 “C ) Resistors/Thermistors 2 (in m rr) B -C o n s ta n t (2 5 -5 0 ° G ) (K) M a x . O p e ra tin g


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    PDF P18XF101D 100ohm P18XF151D 150ohm CP18XM 220ohm NCP18W F104D03RB NCP18XH103F03RB