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    MG600Q1 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG600Q1US41 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG600Q1US51 Toshiba GTR Module Silicon N Channel IGBT Original PDF
    MG600Q1US59A Mitsubishi HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Original PDF
    MG600Q1US61 Toshiba Original PDF
    MG600Q1US65H Toshiba Silicon N Channel IGBT Original PDF

    MG600Q1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mg600q1us51

    Abstract: No abstract text available
    Text: MG600Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG600Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max)


    Original     		PDF MG600Q1US51 2-109F3A mg600q1us51

    Toshiba bridge diode

    Abstract: MG600Q1US51
    Text: MG600Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG600Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (max) Enhancement-mode


    Original     		PDF MG600Q1US51 2-109F3A Toshiba bridge diode MG600Q1US51

    MG600Q1US61

    Abstract: TOSHIBA IGBT DATA BOOK
    Text: MG600Q1US61 TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applications Motor Control Applications • High input impedance · High speed: tf = 0.3 µs max Unit: mm Inductive load · Low saturation voltage: VCE (sat) = 2.6 V (max)


    Original     		PDF MG600Q1US61 2-109F1A MG600Q1US61 TOSHIBA IGBT DATA BOOK

    MG600Q1US51

    Abstract: No abstract text available
    Text: MG600Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG600Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode


    Original     		PDF MG600Q1US51 2-109F3A MG600Q1US51

    Untitled

    Abstract: No abstract text available
    Text: MG600Q1US61 TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applications Motor Control Applications • High input impedance • High speed: tf = 0.3 µs max Unit: mm Inductive load • Low saturation voltage: VCE (sat) = 2.6 V (max)


    Original     		PDF MG600Q1US61 2-109F1A

    TOSHIBA IGBT

    Abstract: No abstract text available
    Text: MG600Q1US65H TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E C E G B JEDEC ― JEITA


    Original     		PDF MG600Q1US65H 2-109F1A TOSHIBA IGBT

    102 TRANSISTOR

    Abstract: MG600Q1US59A mitsubishi IGBT Modules MG600Q1US59 E80276 IGBT 600V 600A
    Text: MITSUBISHI IGBT MODULES MG600Q1US59A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS MG600Q1US59A FEATURE ¡The electrodes are isolated from case. ¡Enhancement-mode ¡Integrates fault-signal output circuit in package. Short-Circuit and Over-Current


    Original     		PDF MG600Q1US59A E80276 E80271 102 TRANSISTOR MG600Q1US59A mitsubishi IGBT Modules MG600Q1US59 E80276 IGBT 600V 600A

    0001 TRANSISTOR

    Abstract: No abstract text available
    Text: MG600Q1US61 TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applications Motor Control Applications • High input impedance • High speed: tf = 0.3 µs max Unit: mm Inductive load • Low saturation voltage: VCE (sat) = 2.6 V (max)


    Original     		PDF MG600Q1US61 2-109F1A 0001 TRANSISTOR

    MG600Q1US65H

    Abstract: diode BY 028
    Text: MG600Q1US65H TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US65H High Power & High Speed Switching Applications • High input impedance · Enhancement-mode · The electrodes are isolated from case. Unit: mm Equivalent Circuit E C E G B JEDEC ― JEITA


    Original     		PDF MG600Q1US65H 2-109F1A 15transportation MG600Q1US65H diode BY 028

    TC58DVG14B1FT00

    Abstract: TH58DVG24B1FT00 Ethernet-MAC ic TH58DVG TMP86P203P 721A SOP8 721A TMP86P202P 20-DIP pwm igbt
    Text: ご注意 本資料に掲載されております製品※の一部に2004 年 10 月 1 日付けで三菱 電機株式会社へ譲渡された製品があります。詳しくは弊社営業窓口までお問 い合わせ下さい。 ※対象製品：大容量モジュール事業 自動車用途、高耐圧製品を除く


    Original     		PDF 03-3457-3405FAX. TMPR4938XBG-300 133MHz TC58DVG14B1FT00 TH58DVG24B1FT00 48TSOP TC58DVG14B1FT00 TH58DVG24B1FT00 Ethernet-MAC ic TH58DVG TMP86P203P 721A SOP8 721A TMP86P202P 20-DIP pwm igbt

    GT30J322

    Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
    Text: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬


    Original     		PDF MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    tlp421 equivalent

    Abstract: igbt protection circuit diagram MQ400V1US51A igbt controller IPM module MG400Q2YS60A 110C mg600Q1US59 MG300Q2YS60A MG400V2YS60A
    Text: NEW COMPACT IGBT MODULES WITH INTEGRATED CURRENT AND TEMPERATURE SENSORS By Eric R. Motto, John F. Donlon Application Engineering Powerex Incorporated Abstract – A new family of compact IGBT modules has been developed to bridge the gap between fully integrated IPM devices and basic IGBT modules. The idea of this new family was


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MG600Q1US41 HIGH POWER SW ITCHING APPLICATIONS. MOTOR CO N TRO L APPLICATIONS. High Input Impedance H ighspeed : tf= 0.5/iS Max. Low Saturation Voltage : V cE (sat) = 4.0V (Max.) Enhancement-Mode : TOSHIBA 2-109E1A Outline (See page 3 for the device outline)


    OCR Scan     		PDF MG600Q1US41 2-109E1A MG60QQ1US41

    MG600Q1US51

    Abstract: 10EFF
    Text: TOSHIBA MG600Q1US51 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 6 0 0 Q 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3/*s Max. @Induetive Load Low Saturation Voltage


    OCR Scan     		PDF MG600Q1US51 2-109F3A Volta00500 10//s MG600Q1US51 10EFF

    MG600Q1US41

    Abstract: 2-109E1A
    Text: T O S H IB A MG600Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 6 0 0 Q 1 US41 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=0.5,«s Max. Low Saturation Voltage : VCE(sat)~4-0V (Max.) Enhancement-Mode


    OCR Scan     		PDF MG600Q1US41 MG600Q1 2-109E1A 100//S MG600Q1US41 2-109E1A

    MG600Q1US41

    Abstract: No abstract text available
    Text: T O SH IB A MG600Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG600Q1US41 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=0.5^s Max. Low Saturation Voltage : VQE(sat) = 4.0V (Max.) Enh ancement-Mode


    OCR Scan     		PDF MG600Q1US41 2-109E1A MG600Q1US41

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG600Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG600Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. EQUIVALENT CIRCUIT High Input Impedance High Speed : tf= 0.5/*s Max. C Low Saturation Voltage : V cE(sat) = 4-0V(Max.)


    OCR Scan     		PDF MG600Q1US41 2-109E1A 000A// --10V

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG600Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG600Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. H ig h In p u t Im pedance EQUIVALENT CIRCUIT H ig h Speed : tf=0.5/*s M ax. C Low Satu ratio n Voltage : V c E (s a t) = 4-0V(M ax.)


    OCR Scan     		PDF MG600Q1US41 2-109E1A

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9

    MG15J6ES40

    Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4
    Text: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40


    OCR Scan     		PDF MG15J6ES40 MG2SJ6KS40 MG50J2YS50 MG50J6KS50 MG75J2YS50 MG75J6KS50 100J2YS50 MG100J6KS50 MG150J2YS50 MG200J2YS50 MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4

    GT80J101

    Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
    Text: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412


    OCR Scan     		PDF GT8J101 GT8J102 GT8Q101 GT15J101 GT15J102 GT8Q102 MG300J2YS50 MG400J1US51 MG400J2YS50 MG800J1US51 GT80J101 MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5

    G50Q2YS40

    Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
    Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101


    OCR Scan     		PDF GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A M G 6 00 Q 1U S5 1 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 6 0 0 Q 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf= 0.3,ms Max. @Induetive Load Low Saturation Voltage


    OCR Scan     		PDF MG600Q1US51