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    MG600Q1US61 Datasheets (1)

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    MG600Q1US61

    Abstract: TOSHIBA IGBT DATA BOOK
    Text: MG600Q1US61 TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applications Motor Control Applications • High input impedance · High speed: tf = 0.3 µs max Unit: mm Inductive load · Low saturation voltage: VCE (sat) = 2.6 V (max)


    Original     		PDF MG600Q1US61 2-109F1A MG600Q1US61 TOSHIBA IGBT DATA BOOK

    Untitled

    Abstract: No abstract text available
    Text: MG600Q1US61 TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applications Motor Control Applications • High input impedance • High speed: tf = 0.3 µs max Unit: mm Inductive load • Low saturation voltage: VCE (sat) = 2.6 V (max)


    Original     		PDF MG600Q1US61 2-109F1A

    0001 TRANSISTOR

    Abstract: No abstract text available
    Text: MG600Q1US61 TOSHIBA IGBT Module Silicon N Channel IGBT MG600Q1US61 High Power Switching Applications Motor Control Applications • High input impedance • High speed: tf = 0.3 µs max Unit: mm Inductive load • Low saturation voltage: VCE (sat) = 2.6 V (max)


    Original     		PDF MG600Q1US61 2-109F1A 0001 TRANSISTOR