MCR18EZPJ101 Search Results

MCR18EZPJ101 Price and Stock

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ROHM Semiconductor MCR18EZPJ101 RES SMD 100 OHM 5% 1/4W 1206
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MCR18EZPJ101	Digi-Reel			1	1 $0.1 10 $0.1 100 $0.1 1000 $0.1 10000 $0.1	Buy Now
	MCR18EZPJ101	Cut Tape			1	1 $0.1 10 $0.1 100 $0.1 1000 $0.1 10000 $0.1	Buy Now
	MCR18EZPJ101	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.00478	Buy Now
Verical	MCR18EZPJ101		98,447		2,000	1 - 10 - 100 - 1000 - 10000 $0.0337	Buy Now
Bristol Electronics	MCR18EZPJ101		430			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	MCR18EZPJ101		78,757			1 $0.14 10 $0.14 100 $0.14 1000 $0.14 10000 $0.14	Buy Now
ComSIT USA	MCR18EZPJ101		350,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Chip1Stop	MCR18EZPJ101	Cut Tape	2,030			1 - 10 - 100 $0.0191 1000 $0.00936 10000 $0.00856	Buy Now
Component Electronics, Inc	MCR18EZPJ101		249			1 $0.31 10 $0.31 100 $0.23 1000 $0.2 10000 $0.2	Buy Now
CoreStaff Co Ltd	MCR18EZPJ101		98,447			1 $0.073 10 $0.06 100 $0.025 1000 $0.014 10000 $0.014	Buy Now
Others MCR18EZPJ101 INSTOCK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip 1 Exchange	MCR18EZPJ101		9,074			1 - 10 - 100 - 1000 - 10000 -	Get Quote

MCR18EZPJ101 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MCR18EZPJ101		ROHM	RES 100 OHM 1/4W 5% 1206 SMD		Original	PDF

MCR18EZPJ101 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 68%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	PDF	EGN21C160I2D 14GHz 25deg /-10MHz
GRM1882C1H100J Abstract: No abstract text available Text: SGN27C210I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 53.0dBm typ. @ Psat High Efficiency: 62%(typ.) @ Psat Power Gain : 16.3dB(typ.) @ f=2.655GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	PDF	SGN27C210I2D 655GHz /-10MHz 48dBm GRM1882C1H100J
CS3376C Abstract: GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101 Text: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	PDF	EGN35C070I2D 43dBm /-10MHz CS3376C GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101
GRM1882C1H100J Abstract: No abstract text available Text: EGN16C105MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 50.5dBm typ. @ Psat High Efficiency: 65%(typ.) @ Psat Power Gain :19dB(typ.) @ f=1.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	PDF	EGN16C105MK 25deg D10MHz 45dBm /-10MHz GRM1882C1H100J
QPO-1LZ Abstract: No abstract text available Text:   QPO-1-EVAL1 QPO-1-EVAL1 User’s Guide Description: Features: The QPO-1-EVAL1 is designed to allow full testing of the QPO1LZ, along with its various performance options, to fully optimize a final system design. The board offers two terminal options for vertical or horizontal mounting. The user must	Original	PDF
RY130 Abstract: ry185 Piher* pot 47K Ry110 RY182 Piher* pot 470K RY169 3296 Variable Resistor terminals BOURNS MRS16T UR73D3ATTE10L0F Text: An invaluable resource for buyers and engineers This particular book presents Anglia’s primary resistor product lines sourced from six key suppliers. Compiled in a convenient format to assist both buyers and engineers, it provides all the essential data and part numbers to aid the	Original	PDF
Untitled Abstract: No abstract text available Text: EGN35C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 60%(typ.) @ Psat Power Gain : 15.5dB(typ.) @ f=3.5GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	PDF	EGN35C070I2D 25deg /-10MHz
CS3376C Abstract: EGN35C070I2D CS-3376C TZY2Z010A001 GRM188B11H102KA01D GSC364 HYB3500 JESD22-A114 MCR18EZPJ101 GRM188B11h Text: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater	Original	PDF	EGN35C070I2D 43dBm /-10MHz CS3376C EGN35C070I2D CS-3376C TZY2Z010A001 GRM188B11H102KA01D GSC364 HYB3500 JESD22-A114 MCR18EZPJ101 GRM188B11h