Untitled
Abstract: No abstract text available
Text: Control No. : GSC-0364-E Established on Jun 1, 2011 Product Information 1. 3500MHz Band 90deg Chip Hybrid Coupler 1.1 TYPE No. : GSC364-HYB3500 RoHS correspondence article 2. Appearance and Construction 2.1 Dimension Unit: mm 5.0 0.4 0.4 2 1 1.5 2 1.5 1
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PDF
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GSC-0364-E
3500MHz
90deg
GSC364-HYB3500
GSC364
25degC)
35degC
125deg
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Untitled
Abstract: No abstract text available
Text: Control No. : GSC-0364-E Established on Jun 1, 2011 Product Information 1. 3500MHz Band 90deg Chip Hybrid Coupler 1.1 TYPE No. : GSC364-HYB3500 RoHS correspondence article 2. Appearance and Construction 2.1 Dimension Unit: mm 5.0 0.4 0.4 2 1 1.5 2 1.5 1
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Original
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PDF
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GSC-0364-E
3500MHz
90deg
GSC364-HYB3500
GSC364
25degC)
35degC
125deg
|
CS3376C
Abstract: GRM188B11H102KA01D ATC100B100JW500 risho GRM188B31H104KA92D EGN35C070I2D GSC364-HYB3500 JESD22-A114 MCR03EZPJ101 MCR18EZPJ101
Text: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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Original
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PDF
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EGN35C070I2D
43dBm
/-10MHz
CS3376C
GRM188B11H102KA01D
ATC100B100JW500
risho
GRM188B31H104KA92D
EGN35C070I2D
GSC364-HYB3500
JESD22-A114
MCR03EZPJ101
MCR18EZPJ101
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Untitled
Abstract: No abstract text available
Text: EGN35C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 60%(typ.) @ Psat Power Gain : 15.5dB(typ.) @ f=3.5GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater
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Original
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PDF
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EGN35C070I2D
25deg
/-10MHz
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CS3376C
Abstract: EGN35C070I2D CS-3376C TZY2Z010A001 GRM188B11H102KA01D GSC364 HYB3500 JESD22-A114 MCR18EZPJ101 GRM188B11h
Text: EGN35C070I2D GaN-HEMT 75W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 48.8dBm typ. @ Psat ・High Efficiency: 60%(typ.) @ Psat ・Power Gain : 15.5dB(typ.) @ f=3.5GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater
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Original
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PDF
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EGN35C070I2D
43dBm
/-10MHz
CS3376C
EGN35C070I2D
CS-3376C
TZY2Z010A001
GRM188B11H102KA01D
GSC364
HYB3500
JESD22-A114
MCR18EZPJ101
GRM188B11h
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