Untitled
Abstract: No abstract text available
Text: FDMC86160 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 43 A, 14 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been
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FDMC86160
FDMC86160
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marking DF FAIRCHILD
Abstract: No abstract text available
Text: FDMS86540_F142 N-Channel PowerTrench MOSFET 60 V, 50 A, 3.4 m Features Description • RDS on = 2.7 m (Typ.) at VGS = 10 V, ID = 20 A • Low FOM RDS(on)*QG, Low Reverse-Recovery Charge, Qrr This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet
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FDMS86540
marking DF FAIRCHILD
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Untitled
Abstract: No abstract text available
Text: FDME430NT N-Channel PowerTrench MOSFET 30 V, 6 A, 40 mΩ Features General Description Max rDS on = 40 mΩ at VGS = 4.5 V, ID = 6 A This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET
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FDME430NT
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ON Semiconductor marking
Abstract: fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline
Text: DLD601/D Rev. 1, Mar-2001 One-Gate Logic One-Gate Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does
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DLD601/D
Mar-2001
r14525
DLD601
ON Semiconductor marking
fairchild marking codes sot-23
W2D SOT23
diode w2d
SOT-353 MARKING L5
marking code vk, sot-363
va sot-353
1C SOT353
MC74VHC1G135
vsop8 package outline
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land pattern for sot23-3
Abstract: 12 sot23-3 marking d1y d0ay marking C3y sot-23 28 sot23-3 ILC5062 ILC5062AM23 ILC5062AM25 ILC5062AM27
Text: www.fairchildsemi.com ILC5062 SOT-23 Power Supply reset Monitor with 1% precision Features Description • • • • • • • All-CMOS voltage monitoring circuit in either a 3-lead SOT-23 or SC70 package offers the best performance in power consumption and accuracy.
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ILC5062
OT-23
land pattern for sot23-3
12 sot23-3
marking d1y
d0ay
marking C3y sot-23
28 sot23-3
ILC5062
ILC5062AM23
ILC5062AM25
ILC5062AM27
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marking DF FAIRCHILD
Abstract: FDMC86248
Text: FDMC86248 N-Channel Power Trench MOSFET 150 V, 13 A, 90 mΩ Features General Description Max rDS on = 90 mΩ at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDMC86248
FDMC86248
marking DF FAIRCHILD
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Abstract: No abstract text available
Text: FDMS86250 N-Channel PowerTrench MOSFET 150 V, 20 A, 25 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDMS86250
FDMS86250
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Untitled
Abstract: No abstract text available
Text: FDMS86255 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 45 A, 12.4 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been
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FDMS86255
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Untitled
Abstract: No abstract text available
Text: FDMC8360L N-Channel Shielded Gate Power Trench MOSFET 40 V, 80 A, 2.1 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been
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FDMC8360L
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Abstract: No abstract text available
Text: FDMS86350 N-Channel PowerTrench MOSFET 80 V, 130 A, 2.4 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDMS86350
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FDN537N
Abstract: marking 537
Text: FDN537N Single N-Channel Power Trench MOSFET 30 V, 6.5 A, 23 mΩ Features General Description Max rDS on = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and
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FDN537N
FDN537N
marking 537
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Untitled
Abstract: No abstract text available
Text: FDMS86150 N-Channel PowerTrench MOSFET 100 V, 60 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and
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FDMS86150
FDMS86150
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FDMC6683
Abstract: No abstract text available
Text: P-Channel PowerTrench MOSFET -20 V, -14 A, 8.4 mΩ Features General Description Max rDS on = 8.4 mΩ at VGS = -4.5 V, ID = -14 A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(ON), switching performance and
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Abstract: No abstract text available
Text: FDMC8884 N-Channel Power Trench MOSFET 30 V, 15 A, 19 mΩ Features General Description ̈ Max rDS on = 19 mΩ at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC8884
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Abstract: No abstract text available
Text: FDMA8878 Single N-Channel Power Trench MOSFET 30 V, 9.0 A, 16 mΩ Features General Description Max rDS on = 16 mΩ at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has
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FDMA8878
FDMA8878
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mosfet L 3055
Abstract: No abstract text available
Text: FDMS86150 N-Channel PowerTrench MOSFET 100 V, 60 A, 4.85 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and
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FDMS86150
FDMS86150
mosfet L 3055
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2326S
Abstract: No abstract text available
Text: FDMC86160 N-Channel Power Trench MOSFET 100 V, 43 A, 14 mΩ Features General Description Max rDS on = 14 mΩ at VGS = 10 V, ID = 9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC86160
FDMC86160
2326S
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Abstract: No abstract text available
Text: FDMS86201 N-Channel Shielded Gate PowerTrench MOSFET 120 V, 49 A, 11.5 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been
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FDMS86201
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FDMC86102L
Abstract: No abstract text available
Text: FDMC86102L N-Channel Shielded Gate PowerTrench MOSFET 100 V, 18 A, 23 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been
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FDMC86102L
FDMC86102L
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Abstract: No abstract text available
Text: FDMC86102 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 20 A, 24 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been
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FDMC86102
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FDMC86240
Abstract: No abstract text available
Text: FDMC86240 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 16 A, 51 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been
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FDMC86240
FDMC86240
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Untitled
Abstract: No abstract text available
Text: FDMC7660 N-Channel PowerTrench MOSFET 30 V, 20 A, 2.2 mΩ Features General Description ̈ Max rDS on = 2.2 mΩ at VGS = 10 V, ID = 20 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC7660
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Untitled
Abstract: No abstract text available
Text: FDMC86248 N-Channel Power Trench MOSFET 150 V, 13 A, 90 mΩ Features General Description ̈ Max rDS on = 90 mΩ at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and
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FDMC86248
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4405 mosfet
Abstract: No abstract text available
Text: FDMC8010 N-Channel PowerTrench MOSFET 30 V, 75 A, 1.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This
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FDMC8010
FDMC8010
4405 mosfet
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