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    FDME430NT Price and Stock

    onsemi FDME430NT

    MOSFET N-CH 30V 6A MICROFET1.6
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    DigiKey FDME430NT Reel
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    FDME430NT Digi-Reel 1
    • 1 $0.59
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    FDME430NT Cut Tape
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    Rochester Electronics LLC FDME430NT

    MOSFET N-CH 30V 6A MICROFET
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    DigiKey FDME430NT Bulk 1,268
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    Fairchild Semiconductor Corporation FDME430NT

    Small Signal Field-Effect Transistor, 6A, 30V, N-Channel MOSFET '
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    Rochester Electronics FDME430NT 34,301 1
    • 1 $0.2275
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    FDME430NT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDME430NT Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSF N CH 30V 6A MICROFET1.6 Original PDF

    FDME430NT Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FDME430NT N-Channel PowerTrench MOSFET 30 V, 6 A, 40 mΩ Features General Description „ Max rDS on = 40 mΩ at VGS = 4.5 V, ID = 6 A This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET


    Original     		PDF FDME430NT

    FDME430NT

    Abstract: No abstract text available
    Text: FDME430NT N-Channel PowerTrench MOSFET 30 V, 6 A, 40 mΩ Features General Description „ Max rDS on = 40 mΩ at VGS = 4.5 V, ID = 6 A This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET


    Original     		PDF FDME430NT FDME430NT

    Untitled

    Abstract: No abstract text available
    Text: FDME430NT N-Channel PowerTrench MOSFET 30 V, 6 A, 40 mΩ Features General Description „ Max rDS on = 40 mΩ at VGS = 4.5 V, ID = 6 A This single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET


    Original     		PDF FDME430NT FDME430NT