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    FDMC86248 Search Results

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    FDMC86248 Price and Stock

    onsemi FDMC86248

    MOSFET N CH 150V 3.4A POWER33
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDMC86248 Digi-Reel 14,540 1
    • 1 $2.7
    • 10 $1.742
    • 100 $2.7
    • 1000 $0.89157
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    FDMC86248 Cut Tape 14,540 1
    • 1 $2.7
    • 10 $1.742
    • 100 $2.7
    • 1000 $0.89157
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    FDMC86248 Reel 12,000 3,000
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    • 10000 $0.825
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    Avnet Americas FDMC86248 Reel 20 Weeks 3,000
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    Mouser Electronics FDMC86248 12,167
    • 1 $1.61
    • 10 $1.3
    • 100 $1.08
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    Newark FDMC86248 Reel 3,000
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    Onlinecomponents.com FDMC86248
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    • 1000 $1.716
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    Rochester Electronics FDMC86248 16,871 1
    • 1 $0.9167
    • 10 $0.9167
    • 100 $0.8617
    • 1000 $0.7792
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    TME FDMC86248 1
    • 1 $1.68
    • 10 $1.51
    • 100 $1.2
    • 1000 $1.11
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    Richardson RFPD FDMC86248 3,000
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    Avnet Asia FDMC86248 20 Weeks 3,000
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    Avnet Silica FDMC86248 21 Weeks 3,000
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    EBV Elektronik FDMC86248 22 Weeks 3,000
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    Wuhan P&S FDMC86248 586 1
    • 1 $2.31
    • 10 $2.31
    • 100 $1.47
    • 1000 $1.12
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    Aptina Imaging FDMC86248

    Trans MOSFET N-CH Si 150V 3.4A 8-Pin Power 33 T/R
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    Verical FDMC86248 16,696 349
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    • 1000 $0.974
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    Fairchild Semiconductor Corporation FDMC86248

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    Bristol Electronics FDMC86248 1,885
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    Quest Components FDMC86248 1,508
    • 1 $2.4544
    • 10 $2.4544
    • 100 $2.4544
    • 1000 $0.9204
    • 10000 $0.9204
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    FDMC86248 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDMC86248 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N CH 150V 3.4A POWER33 Original PDF

    FDMC86248 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FDMC86248 N-Channel Power Trench MOSFET 150 V, 13 A, 90 mΩ Features General Description ̈ Max rDS on = 90 mΩ at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDMC86248

    Untitled

    Abstract: No abstract text available
    Text: FDMC86248 N-Channel Power Trench MOSFET 150 V, 13 A, 90 mΩ Features General Description „ Max rDS on = 90 mΩ at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDMC86248 FDMC86248

    marking DF FAIRCHILD

    Abstract: FDMC86248
    Text: FDMC86248 N-Channel Power Trench MOSFET 150 V, 13 A, 90 mΩ Features General Description „ Max rDS on = 90 mΩ at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDMC86248 FDMC86248 marking DF FAIRCHILD

    Untitled

    Abstract: No abstract text available
    Text: WHITE PAPER: WP014 eGaN FETs in Wireless Power Transfer Systems eGaN® FETs in Wireless Power Transfer Systems EFFICIENT POWER CONVERSION Alex Lidow, Ph.D., CEO and Michael de Rooij, Ph.D., Executive Director of Applications Engineering Introduction The popularity of wireless energy transfer has increased over the last few years and in particular for applications targeting portable device charging. In this article,


    Original     		PDF WP014