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IXYS Corporation IXBH32N300 IGBT 3000V 80A 400W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBH32N300	Tube	12		1	1 $86.24 10 $86.24 100 $76.727 1000 $76.727 10000 $76.727	Buy Now
Mouser Electronics	IXBH32N300		37			1 $86.24 10 $86.24 100 $76.72 1000 $76.72 10000 $76.72	Buy Now
TTI	IXBH32N300	Tube			300	1 - 10 - 100 - 1000 $76.73 10000 $76.73	Buy Now
IXYS Corporation IXBH32N300HV DISC IGBT BIMSFT-VERYHIVOLT TO-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBH32N300HV	Tube			300	1 - 10 - 100 - 1000 $57.85687 10000 $57.85687	Buy Now
Mouser Electronics	IXBH32N300HV					1 - 10 - 100 - 1000 $60.25 10000 $60.25	Get Quote
TTI	IXBH32N300HV	Tube			300	1 - 10 - 100 - 1000 $57.86 10000 $57.86	Buy Now
Littelfuse Inc IXBH32N300 Disc Igbt Bimsft-Veryhivolt To-247Ad/ Tube \|Littelfuse IXBH32N300
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXBH32N300	Bulk			300	1 - 10 - 100 $80.41 1000 $80.41 10000 $80.41	Buy Now
RS	IXBH32N300	Bulk		8 Weeks	30	1 - 10 - 100 $118.67 1000 $118.67 10000 $118.67	Get Quote
Littelfuse Inc IXBH32N300HV Disc Igbt Bimsft-Veryhivolt To-247Ad/ Tube \|Littelfuse IXBH32N300HV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXBH32N300HV	Bulk			300	1 - 10 - 100 $60.64 1000 $60.64 10000 $60.64	Buy Now
RS	IXBH32N300HV	Bulk		8 Weeks	30	1 - 10 - 100 $89.49 1000 $89.49 10000 $89.49	Get Quote

IXBH32N300 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXBH32N300		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 80A 400W TO247		Original	PDF

IXBH32N300 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
32N30 Abstract: No abstract text available Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 32A VCE sat ≤ 3.2V IXBH32N300 IXBT32N300 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR	Original	PDF	IC110 IXBH32N300 IXBT32N300 O-247 32N300 32N30
IXBH32N300 Abstract: B32N 32N30 IXBT32N300 32N300 Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH32N300 IXBT32N300 VCES = 3000V IC110 = 32A VCE sat ≤ 3.2V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR	Original	PDF	IXBH32N300 IXBT32N300 IC110 O-247 32N300 IXBH32N300 B32N 32N30 IXBT32N300
IXGF30N400 Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers	Original	PDF	O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	PDF	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
IXBK55N300 Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250 Text: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking	Original	PDF	E153432) com/IXAN0022 IXBK55N300 IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250