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IXYS Corporation IXBH2N250 IGBT 2500V 5A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBH2N250	Tube	362		1	1 $25.94 10 $25.94 100 $18.12733 1000 $18.12733 10000 $18.12733	Buy Now
Mouser Electronics	IXBH2N250		12			1 $24.89 10 $24.88 100 $18.12 1000 $18.12 10000 $18.12	Buy Now
Future Electronics	IXBH2N250	Tube		35 Weeks	30	1 - 10 - 100 $17.77 1000 $17.77 10000 $17.77	Buy Now
TTI	IXBH2N250	Tube			300	1 - 10 - 100 - 1000 $24.17 10000 $24.17	Buy Now
Littelfuse Inc IXBH2N250 Disc Igbt Bimsft-Veryhivolt To-247Ad/ Tube \|Littelfuse IXBH2N250
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXBH2N250	Bulk			300	1 - 10 - 100 $19 1000 $19 10000 $19	Buy Now
RS	IXBH2N250	Bulk		8 Weeks	30	1 - 10 - 100 $28.04 1000 $28.04 10000 $28.04	Get Quote

IXBH2N250 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXBH2N250		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 2500V 5A 32W TO247		Original	PDF

IXBH2N250 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXBT2N250 Abstract: No abstract text available Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM VCES = 2500V IC110 = 2A VCE sat ≤ 3.50V IXBH2N250 IXBT2N250 Monolithic Bipolar MOS Transistor TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IC110 IXBH2N250 IXBT2N250 O-247 2N250 IXBT2N250
IXBH2N250 Abstract: IXBT2N250 2N250 Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM IXBH2N250 IXBT2N250 VCES = 2500V IC110 = 2A VCE sat ≤ 3.50V Monolithic Bipolar MOS Transistor TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IXBH2N250 IXBT2N250 IC110 O-247 2N250 IXBH2N250 IXBT2N250
IXGF30N400 Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers	Original	PDF	O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	PDF	P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
IXBK55N300 Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250 Text: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking	Original	PDF	E153432) com/IXAN0022 IXBK55N300 IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250