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IXYS Corporation IXBF55N300 DISC IGBT BIMSFT-VERYHIVOLT I4-P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBF55N300	Tube			300	1 - 10 - 100 - 1000 $90.79073 10000 $90.79073	Buy Now
Mouser Electronics	IXBF55N300					1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	IXBF55N300	Tube			300	1 - 10 - 100 - 1000 $90.84 10000 $90.84	Buy Now
Littelfuse Inc IXBF55N300 Disc Igbt Bimsft-Veryhivolt I4-Pak Iso+/ Tube \|Littelfuse IXBF55N300
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXBF55N300	Bulk			300	1 - 10 - 100 $95.15 1000 $95.15 10000 $95.15	Buy Now
RS	IXBF55N300	Bulk		8 Weeks	25	1 - 10 - 100 $140.42 1000 $140.42 10000 $140.42	Get Quote

IXBF55N300 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXBF55N300 Abstract: transistor 537 b 360 isoplus ixys mounting Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = 3000V IC110 = 28A VCE sat ≤ 3.2V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C	Original	PDF	IXBF55N300 IC110 55N300 0-22-09-A IXBF55N300 transistor 537 b 360 isoplus ixys mounting
IXBF55N300 Abstract: 55N300 Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = 3000V IC110 = 28A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C	Original	PDF	IXBF55N300 IC110 55N300 0-22-09-A IXBF55N300
IXBF55N300 Abstract: No abstract text available Text: High Voltage, High Gain BIMOSFETTM IXBF55N300 VCES = 3000V IC110 = 34A VCE sat ≤ 3.2V Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IC110 50/60Hz, IXBF55N300 IC110 100ms 55N300 11-03-11-C IXBF55N300
Untitled Abstract: No abstract text available Text: High Voltage, High Gain BIMOSFETTM VCES = 3000V IC110 = 34A VCE sat ≤ 3.2V IXBF55N300 Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IC110 IXBF55N300 100ms 55N300 11-03-11-C
IXGF30N400 Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers	Original	PDF	O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
IXBK55N300 Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250 Text: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking	Original	PDF	E153432) com/IXAN0022 IXBK55N300 IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250